• 제목/요약/키워드: M-ICP

검색결과 530건 처리시간 0.031초

핫 엠보싱용 점착방지막으로 사용되는 10nm급 두께의 Teflon-like 박막의 형성 및 특성평가 (The Deposition and Characterization of 10 nm Thick Teflon-like Anti-stiction Films for the Hot Embossing)

  • 차남구;김인권;박창화;임현우;박진구
    • 한국재료학회지
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    • 제15권3호
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    • pp.149-154
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    • 2005
  • Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

평판형 디스플레이 적용을 위한 내장형 Multiple U-Type 안테나를 이용한 유도결합형 플라즈마에 관한 연구 (Characteristics of Inductively Coupled Plasma with a Multiple U-Type Internal Antenna for Flat Panel Display Applications)

  • 임종혁;김경남;염근영
    • 한국진공학회지
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    • 제15권3호
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    • pp.241-245
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    • 2006
  • 본 연구에서는 대면적 플라즈마 공정에 적용 가능한 고밀도 플라즈마를 발생시키기 위하여 기존의 내장형 serpentine-type 안테나와 새롭게 고안된 내장형 유도결합형 multiple U-Type 안테나를 1020mm X 920mm(기판 880 X 660mm)의 챔버에서 연구하였다. 내장형 유도결합형 multiple U-type을 적용한 플라즈마는 serpentine-type과 비교하여 더 높은 플라즈마 밀도, 높은 radical 밀도, 좋은 균일도를 관찰할 수 있었다. 이는 serpentine-type의 경우와 비교하여 보다 적은 정상파 효과와 높은 유도결합에 기인한다. 내장형 유도결합형 multiple U-type 안테나의 적용으로 $2\times10^{11}/cm^3$의 높은 플라즈마 밀도를 얻을 수 있었고 5000W의 입력전압과 Ar 가스 15mTorr 공정압력조건에서 4%의 균일도를 관찰할 수 있었다.

Cl$_2$/Ar 가스 플라즈마에 $O_2$ 첨가에 따른 Pt 식각 특성 연구 (The Study on the Etching Characteristics of Pt Thin Film by $O_2$ Addition to $_2$/Ar Gas Plasma)

  • 김창일;권광호
    • 전자공학회논문지D
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    • 제36D권5호
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    • pp.29-35
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    • 1999
  • Pt박막의 ICP 식각을 위한 Cl\sub 2 \/Ar 가스 플라즈마에 O\sub 2\ 가스를 첨가하여 Pt 식각 메카니즘을 XPS와 QMS로 조사하였다. 또한 single Langmuir probe를 사용하여 이온전류밀도를 Ar/Cl\sub 2 \/O\sub 2\ 가스 플라즈마에서 측정하였다. O\sub 2\가스 첨가비가 증가할수록 Cl과 Ar species가 급격하게 감소하고 이온전류밀도 역시 감소함을 QMS와 single Langmuir probe로 확인하였다. Pt 식각율의 감소는 O\sub 2\가스 첨가비가 증가할수록 반응성 species와 이온전류밀도의 감소에 기인함을 의미한다. 150 nm/min의 치대 식각율과 2.5의 산화막식각 선택비가 50 sccm의 Ar/Cl\sub 2 \/O\sub 2\ 가수 유량, 600 W의 RF 전력, 125 V의 dc 바이어스 전압 및 10mTorr의 반응로 압력에서 얻었다.

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폴리카보네이트 특성 향상을 위한 고기능성 다층 박막 제조

  • 김성민;김경훈;이근혁;안세훈;임상호;한승희
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.275.2-275.2
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    • 2014
  • 현재 자동차 분야에서 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 Polycarbonate(PC)로 대체하고자 하는 연구가 이루어지고 있다. 하지만, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 문제점으로 지적되고 있으며, 에너지 소비 저감을 위하여 적외선 영역 반사율(reflectance)이 높은 저방사(low emissivity) 특성이 요구되고 있다. 본 연구에서는, ICP-assisted reactive magnetron sputtering 장비를 이용하여 투과율(transmittance)이 확보되고, 고경도 특성을 갖는 Al-Si-N와 300 nm 파장 이하의 자외선 차단 특성이 있는 SiN:H 그리고 저방사 특성을 위해 Al을 증착하였고, 박막의 증착 순서는 SiN:H 박막을 가장 아래에 증착하고 그 위에 Al/Al-Si-N 박막을 다층으로 형성하였다. 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS(X-ray Photoelectron Spectroscopy), XRD (X-ray Diffraction)를 이용하여 분석하였다. Knoop ${\mu}$-hardness tester와 Taber tester를 이용하여 경도 및 내마모 특성을 분석하였다. 제작된 샘플의 Al-Si-N 박막 경도는 Si 비율에 따라 다른 경도 특성을 갖는데, 실제 Si/(Al+Si) 비율이 24%에서 최대 31 GPa의 경도 값을 갖는 것을 확인하였다. UV-Vis Spectrometer를 이용하여 250 nm~700 nm 파장의 투과율을 측정하였고, 자외선 영역의 경우 SiN:H 박막에 의해 300 nm 이하의 파장에서 2% 이하의 투과율을 확인하였다. 그리고 FT-IR(Fourier Transform Infrared Spectroscopy)를 이용하여 $2.5{\mu}m{\sim}15{\mu}m$ 파장의 반사율을 이용하여 방사율을 측정하였는데, 3*(Al/Al-Si-N) 구조의 다층 박막의 경우 방사율은 0.27로 측정되었다.

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Etching characteristics of Al-Nd alloy thin films using magnetized inductively coupled plasma

  • Lee, Y.J.;Han, H.R.;Yeom, G.Y.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 1999년도 추계학술발표회 초록집
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    • pp.56-56
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    • 1999
  • For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

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제련소 인근 토양에서 분리한 박테리아 생장에 미치는 중금속 및 pH 영향 (Effects of Heavy Metal and pH on Bacterial Growth Isolated from the Contaminated Smelter Soil)

  • 금미정;윤민호;남인현
    • 한국지하수토양환경학회지:지하수토양환경
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    • 제20권4호
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    • pp.113-121
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    • 2015
  • The contaminated soil at abandoned smelter areas present challenge for remediation, as the degraded materials are typically deficient in nutrients, and rich in toxic heavy metals and metalloids. Bioremediation technique is to isolate new strains of microorganisms and develop successful protocols for reducing metal toxicity with heavy metal tolerant species. The present study collected metal contaminated soil and characterized for pH and EC values, and heavy metal contents. The pH value was 5.80, representing slightly acidic soil, and EC value was 13.47 mS/m. ICP-AES analytical results showed that the collected soil samples were highly contaminated with various heavy metals and metalloids such as lead (183.0 mg/kg), copper (98.6 mg/kg), zinc (91.6 mg/kg), and arsenic (48.1 mg/kg), respectively. In this study, a bacterial strain, Bacillus cereus KM-15, capable of adsorbing the heavy metals was isolated from the contaminated soils by selective enrichment and characterized to apply for the bioremediation. The effects of heavy metal on the growth of the Bacillus cereus KM-15 was determined in liquid cultures. The results showed that 100 mg/L arsenic, lead, and zinc did not affect the growth of KM-15, while the bacterial growth was strongly inhibited by copper at the same concentration. Further, the ability of the bacteria to adsorb heavy metals was evaluated.

충남대학교 대덕캠퍼스내 상수도 물의 수리지구화학적 특성 (Hydrogeochemistry of Supply Water in the Daedeok Campus of Chungnam National University, Korea)

  • 이찬희
    • 자원환경지질
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    • 제33권3호
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    • pp.181-193
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    • 2000
  • This study was undertaken to evaluate the drinking water quality based on physicochemical properties and chemical compositions of the supply water in the Daedeok Campus, and to verify the analytical reliabilities of ICP-MS and IC equipped in the Central Research Facilities at Chungnam National University , Korea. The supply water belongs to $Ca^{2+}-({HCO_3}^-+{SO_4}^{2-})$type, whereas the original water from the Daecheong lake belongs to $(Ca^{2+}-(Mg^{2+})-{HCO_3}^-$ type. Generally, temperature (14.1$^{\circ}C$), pH (6.95), Eh (0 mV), electrical conductivity (117${\mu}$S/cm) and TDS (86.975mg/l) of supply water were higher than those of original lake water . Results using WATEQ4F revealed that potentially toxic ions of the supply water might exist mainly as free metals ($M^{2+}$) and a small amount as ${CO_3}^{2-}$ and $OH^-$ complexes. Also, the water composition belongs to the kaolinite field. Calculated average enrichment indies of the supply water normalized to lake water for anions, mamor cations, toxic cations and total ions are 1.05 , 1.56, 13.05 and 1.17 , respectively. Those values of the ground water in the Daedeok Campus showed 1.71, 4.78, 5.71 and 2.49 , respectively. However , contents of all constituents of these water are within the drinking water standard. All samples were filtered before the chemical analysis. Pale yellow or yellowish brown colored materials of colloidal particles coated the filter paper to thickness of 0.02 to 0.2mm. these are mainly Fe-Cy-Zn compounds with traces of Ni and Pb, the net weights of which compounds range from 0.01to 3.20mg/l. Most elements did not show any conceivable filtering effect of Cu, Fe and Zn. Especially, mean concentration of total Fe decreased considerably from 168.52${\mu}g$/lto 42.58${\mu}g$/l by filtering .

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고주파 유도결합 플라즈마의 전자에너지 분포 계측 (II) (Measurement of Electron Energy Distribution of the Radio-Frequency Inductively Coupled Plasma)

  • 황동원;하장호;전용우;최상태;박원주;이광식;이동인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 E
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    • pp.1803-1805
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    • 1998
  • Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rf power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution electron temperature and electron density and electron energy distribution function were measured for discharge with same aspect ratio(R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, then we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

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Characterization of Microstructure and Thermal property of Ash Deposits on Fire-side Boiler Tube

  • Bang, Jung Won;Lee, Yoon-Joo;Shin, Dong-Geun;Kim, Younghee;Kim, Soo-Ryong;Baek, Chul-Seoung;Kwon, Woo-Teck
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.659-664
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    • 2016
  • Ash deposition of heat exchange boiler, caused mainly by accumulation of particulate matter, reduces heat transfer of the boiler system. Heat and mass transfer through porous media such as ash deposits mainly depend on the microstructure of deposited ash. Therefore, in this study, we investigated microstructural and thermal properties of the ash deposited on the boiler tube. Samples for this research were obtained from the fuel economizer tube in an industrial waste incinerator. To characterize microstructures of the ash deposit samples, scanning electron microscope (SEM), energy-dispersive spectroscopy (EDS), inductively coupled plasma optical emission spectroscopy (ICP-OES), X-ray diffraction (XRD) and BET analysis were employed. The results revealed that it had a porous structure with small particles mostly of less than a few micrometers; the contents of Ca and S were 19.3, 22.6% and 18.5, 18.7%, respectively. Also, the results showed that it consisted mainly of anhydrite ($CaSO_4$) crystals. - The thermal conductivities of the ash deposit sample obtained from the economizer tube in industrial waste incinerator were measured to be 0.63 and 0.54 W/mK at $200^{\circ}C$, which were about 100 times less than the thermal conductivity (61.32 W/mK) of the boiler tube itself, indicating that ash deposition on the boiler tube was closely related to a decrease in boiler heat transfer.

Ar/CF4 유도결합 플라즈마를 이용한 BET 박막의 식각 메카니즘 (Etching Mechanism Of Bi4-xEuxTiO12 (BET) Thin films Using Ar/CF4 Inductively Coupled Plasma)

  • 임규태;김경태;김동표;김창일
    • 한국전기전자재료학회논문지
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    • 제16권4호
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    • pp.298-303
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    • 2003
  • Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.