• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.101-101
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.24.2-24.2
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• 2006

• 한국영양학회:학술대회논문집
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• 한국영양학회 2001년도 춘계연합학술대회 초록
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• pp.202.2-202
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• 2001

• 한국인쇄학회지
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• 제29권1호
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• pp.23-33
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• 2011

This experimental focus to characterize luminescence properties related to CNT (Carbon Nano Tube) element dispersedly implanted in ZnS-based phosphor thin film panel fabricated by a screen printing method. More specifically FE-SEM measurements, L-V(Luminescence vs. Voltage) and photo luminescence were carried out to determine an optimum value of CNT concentration and film thickness for the thin film structure of CNT-ZnS:(Cu, Al) by the screen printing method. We confirmed that an optimum value of CNT concentration in the ZnS:(Cu, Al) film panel is about 0.75 wt% resulting that the electric conductivity is 1.6 times higher than that of pure CNT sample and showing that the luminescence intensity is increasing until the optimum concentration. Clearly, CNT is presenting in the luminescence process providing a pathway for the creation of hot electron and a channel for the electron-hole recombination but overly inserted CNT may hinder to produce the hot electron for making an avalanching process. In case of the overly doped CNT 1.0 wt% in the ZnS-based phosphor, the luminescence intensity is decreasing although the electric conductivity is exponentially increasing. Based on these results, we realized that hot electron occurred by the external electric field or exciton arose by the external photon source are reduced dramatically over the critical value of CNT concentration because CNT element provide various isolated residues in the composites of ZnS based phosphor rather than pathway or channel for the D-A(Donnor to Acceptor) pair transition or the radiative recombination of electron-hole.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.207-214
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• 2006

$Y_{2-x}Gd_xO_3:Eu$, phosphors for plasma display panel(PDP), were prepared by Pechini method which use yttriun chloride, gadolinium chloride, and europium oxide as starting materials. This method is a different way to the synthesis of europium(Eu)-doped phosphors, and it consists of the formation of a polymeric resin obtained by polyesterification between metal chelate compounds and a polyfunctional alcohol. This needs lower temperature than solid-state synthetic method. The prepared $Y_{2-x}Gd_xO_3:Eu$ phosphor particles had spherical shape and coherence. The luminescence intensity of $Y_{2-x}Gd_xO_3:Eu$ phosphor particles increased according to the increase of gadolinium(Gd) content(to 0.8mol%), and $Y_{1.2}Gd_{0.8}O_3:Eu$ phosphors had the highest luminescence intensity under vacuum ultra violet(VUV) excitation. The optimum concentration of Eu in the phosphor and optimum calcination temperature was 3wt% and $1100^{\circ}C$. The prepared phosphors were consist of particle, and its size was between 100nm and 150nm. Among the different polyfunctional alcohols, diethylene glycol(DEG) improved the luminescence intensities of phosphors more than other additives. The Pechini method proved that it is demonstrated to be suitable for the synthesis of phosphors used in PDP.

• 한국정보전자통신기술학회논문지
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• 제4권1호
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• pp.61-67
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• 2011

YAG:Ce 형광제 제조에 있어서 공침(co-precipitation) 후 n-butanol 공비증류(azeotropic distillation)시 HMDS(hexadimethyldisilazane)를 첨가하였을 때, 형광체가 광학특성에 미치는 영향에 관하여 연구하였다. 물과 유기용제에 의한 공비증류 시 유기용제의 분자량이 크면 표면의 수소결합이 유기용제로 치환됨으로서 표면장력을 감소시켜 분체의 원형화(conglobation)와 응집(agglomerate)을 감소시키므로 유기용제로 n-butanol보다 분자량이 큰 HMDS을 첨가하였다. N-butanol 만을 사용한 형광체가 HMDS를 첨가한 것 보다 응집(agglomerate)되는 현상이 감소하였으며 우수한 광학적 특성을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.151-154
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• 2003

The synthesis and luminescent properties of trivalent europium activated gadolinium oxide red phosphors by sol-gel process have been investigated. Aqueous metal nitrate solution was mixed with EDTA which was chosen by the most suitable material of sol-gel formation as chelating agents. We noticed that the samples when are heated with EDTA at a temperature of $100^{\circ}C$ for lhrs, produced brownish and crisp powders due to condensation reaction on decomposition, dehydration and formation of sol-gel. Hence, when the powder pre-heated at about $100^{\circ}C$ was then heated at $1200^{\circ}C$ for 3hrs in atmosphere, the luminescence properties of resultant $Gd_{2}O_{3}:Eu^{3+}$ phosphor was measured by SEM, FT-IT and brightness intensity was shown 20% higher than those prepared by conventional method and by other chelating agent.

• Applied Science and Convergence Technology
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• 제27권3호
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.19-22
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• 2008

Thin film has been an increasing important subject of intensive research, owing to the fact that these films possess desirable optical, electrical and electrochemical properties for uses in many semi-conducting nano-crystal applications, such as light-emitting diodes, lasers and solar cell applications. Here, ZnSe thin films were deposited by electrochemical method for the applications of light emitting diode. Electrochemical deposition of ZnSe thin film is not easy, because of the high difference of reduction potential between zinc ion and selenium acid. In order to handle the band gap of ZnSe crystal thin films easily, electrochemical methods are promising to manufacture these films economically. Therefore we have investigated the present study to characterize zinc selenide thin films deposited on ITO glass plates electrochemically. The luminescent properties of ZnSe films have been evaluated by UV-Vis spectrometer and luminescence spectrometer. And the morphology of the film surface has been discussed qualitatively from SEM images.