• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.749-753
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• 2006

The $ZnGa_2O_4$ phosphor thick films were fabricated using a screen printing method on Si(100) substrates at various sintering temperatures. The XRD patterns show that the $ZnGa_2O_4$ thick films have a (311) main peak and a spinel structure with increasing sintering temperatures. The particle sizes of $ZnGa_2O_4$ phosphor were about 100 nm and the thickness of $ZnGa_2O_4$ thick film was $10{\mu}m$. The CL and PL properties of $ZnGa_2O_4$ showed main peak of 420nm and maximum intensity at the sintering temperature of $900^{\circ}C$. These results indicate that $ZnGa_2O_4$ phosphor thick films hold promise for displays such as plasma display panel and field emission display.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.646-651
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• 1998

In this present study, the luminescence characteristics and mechanism of energy $CaTiO_3$:Pr phosphor were studied using disk specimens sintered at various temperatures and envirenment. A single-phase $CaTiO_3$:Pr was synthesized by sintering above 140$0^{\circ}C$ and its crystal structure was found to be perovskite orthorhombic. A dominant peak around 360 nm and a broad peak around 395 nm were observed in the PLE(Photoluminescence Excitation) spectrum of $CaTiO_3$:Pr with fixed emission wavelength at 612 nm, the decay time of 360 nm excitation was found to be longer than that of 395 nm excitation. From this result, it is assumed that the free carrier excited to 360 nm is transferred to 395 nm energy level. Therefore, the decrease in 395 nm intensity observed in CaTiO$_3$:Pr specimens sintered in Ar gas environment induced shorter decay time and improved CL luminescence.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.318-324
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• 2007

We report on a strong violet luminescence emitted from the ZnO:Al films grown on glass substrate by radio-frequency magnetron sputtering. The growth of high-quality thin films and their optical properties are controlled by adjusting the mixture ratio of Ar and $O_2$, which is used as the sputtering gas. The crystallinity of the films is improved as the oxygen flow ratio is decreased, as evidenced in both x-ray diffractometer and atomic force microscope measurements. As for the violet luminescence measured by photoluminescence (PL) spectroscopy, the peak energy and intensity of the PL signal are decreased with increasing the oxygen flow ratio. The peak energy of the violet PL spectrum for the thin film with an oxygen flow ratio of 50 % is almost constant, regardless of the increase of laser Power and temperature. These results indicate that the violet PL signal is probably due to defects related to interstitial Zn atoms.

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.29-32
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• 2007

Zinc gallate, $ZnGa_2O_4:Mn^{2+}$ co-doped with different concentrations of $Mg^{2+}$ (0.001- 0.5 mol%) was prepared by solid state synthesis method. These compositions were investigated for their photoluminescence and cathodoluminescence properties. The optimized composition $Zn_{0.990}Mg_{0.005}Ga_2O_4:Mn_{0.005}$ shows higher luminescence intensity compared to the parent phosphor. The intense green emission peak was found at 504 nm. The $Mg^{2+}$ doping does not affect much the decay time. It remains <10 ms for these compositions which make them potential candidate for application in TV screens.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1045-1050
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• 2000

Perdeuterated hexaflouroacetylacetonato-ytterbium [Yb(HFA-D)$_3$]complexes were synthesized by the keto-enol tautomerism reaction of Yb(HFA-H$_3$) in methanol-d$_4$in rder to reduct the radiationless transition to the ligands. The luminescence properties of Yb(HFA-D)$_3$complex were measured in the following anhydrous deuterated organic solvents ; Methanol-d$_4$, THF-d$_{8}$, PO(O$CH_3$)$_3$and DMSO-d$_{6}$. The intensity, lifetime and quantum efficiency of the luminescnce in DMSO-d$_{6}$ were superior to those in other deuterated solvents. It was suggested that the anhydrous DMSO-d$_{6}$ might be the most appropriate solvent for the liquid laser material of Yb(HFA-D)$_3$complex.complex.

• 소성∙가공
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• 제16권5호통권95호
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• pp.348-353
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• 2007

The propagation of a macro-scale crack and the accompanying transformation zone around it was visualized in an Y-TZP ceramic using a mechano-luminescence (ML) technique. The technique allows realistic fractures that take place catastrophically in actual applications to be realistically stimulated. Unlike conventional quasi-static R-curves, the ML technique on a relatively fast time frame permitted a so-called quasi-dynamic R-curve in the crack speed range from 50 to 140 m/sec. to be measured. Effective toughening then commenced and the applied stress intensity factor increased to 27 $MPa{\sqrt{m}}$. The transformation zone height obtained from the ML observations was in good agreement with that predicted by the Marshall model, and coincided with previously observed results for quasi-static conditions by Raman spectorscopy and x-ray analysis.

• 한국세라믹학회지
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• 제35권6호
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• pp.619-625
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• 1998

Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin film phosphors were prepared on Si(100) wafers and ITO coated glass substrates by rf magnetron sputtering technique and the effects of the substrates dopant and the sputtering paramet-ers were analyzed, Changes of the oreintation were observed after annealine tratment. The grain size of {{{{ {Zn {Ga }_{2 }O }_{4 } }} : Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate which resulted in higher PL intensity. The PL spectra of Mn doped {{{{ {Zn {Ga }_{2 }O }_{4 } }} thin films showed sharp green luminescence spec-trum. According to CL spectrum it could be concluded that Mn ions acted as an actuator for green emission by substituting Zn atom sites.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.415-418
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• 2009

$Zn_{2}SiO_{4}$:Mn green phosphors doped with Mg for PDP were synthesized by solid state reaction method. $Zn_{2}SiO_{4}$:Mn, Mg phosphors with increasing Mg concentration were changed from Rhombohedral to Orthorhombic structure. Photoluminescence intensity of $Zn_{2}SiO_{4}$:Mn phosphors doped with Mg 0.5 mol was definitely higher than that of Mg non-doped sample. The enhanced luminescence with doping Mg in the $Zn_{2}SiO_{4}$:Mn phosphors was interpreted by the increase of energy transfer from host to Mn ions with substitution Mg for Zn in the $Zn_{2}SiO_{4}$:Mn host.

• Journal of Information Display
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• 제2권4호
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• pp.57-62
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• 2001

Green-emitting $Zn_2SiO_4$:Mn phosphor particles having a spherical shape and high luminescence intensities under VUV were prepared by spray pyrolysis process under severe preparation conditions. The type of precursor solutions affected the morphology and luminescence characteristics of the prepared particles. The particles prepared from the clear solution by laboratory-scale process had spherical shape and dense morphology, while the particles prepared from the severe preparation conditions had rough surface and collapsed structure. However, the particles prepared from the colloidal solution utilizing fumed silica were spherical in shape and filled morphology at the severe preparation conditions of high flow rate of carrier gas, high concentration of solution, and large reactor size. The prepared $Zn_2SiO_4$:Mn phosphor particles with complete spherical shape had higher photoluminescence intensity than that of the commercial product prepared by solid state reaction.

• 한국세라믹학회지
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• 제35권8호
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• pp.801-806
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• 1998

$Eu^{3+}$ -doped $Y_2$$O_3$ phosphors has been prepared by a polymerized complex method and investigated their powder and luminescence properties. They were compared with phosphors prepared by a solid state reac-thion method. The phosphors synthesized have been characterized by X-ray diffraction low-voltage lu-minescent emission spectroscopy etc. Under low-voltage electron excitation $Eu^{3+}$-doped $Y_2$$O_3$ exhibited a strong narrow-band red emission peaking at 612nm. On the other hand the critical value for concentration quenching of sample prepared by the polymerized complex method fired at $1400^{\circ}C$ is x=0.05 for $(Y_{1-x}Eu_x__2O_3$ The emission intensity of phosphors prepared by the polymerized complex method was higher than that of phosphors prepared by the solid state reaction method.