• 한국광물학회지
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• 제17권2호
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• pp.123-133
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• 2004

포항지역 제3기 해성퇴적층에서 산출되는 탄산염광물의 특성을 밝히기 위하여 음극선 발광현미경 관찰과 화학분석을 실시하였다. 발광현미경은 보통의 편광 현미경으로는 관찰할 수 없는 정보를 제공해 준다. 사암의 탄산염 교질물 내에서, 편광현미경하에서는 나타나지 않는 유공충의 형태와 마름모꼴로 자란 돌로마이트 형태들이 음금선 발광현미경하에서는 명확히 나타난다. 화학분석 결과, 발광은 탄산염 광물 내의 망간 성분과 칠 성분에 의해서 나타난다. 그러나 돌로마이트 내의 철성분이 10,000 ppm을 넘게 되면 발광은 사라진다. 산출되는 돌로마이트는 칼슘 성분이 많은 것이 특징이며, $60～70^{\circ}C$의 초기 속성작용 단계에서 생성된 것으로 생각된다.

• 한국의류학회지
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• 제14권3호
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• pp.216-221
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• 1990

This study was performed for the development of antimicrobial finished nonwoven fabrics with water repellency. And it was aimed to examine the changes of moisture related properties and air permeability of the finished fabrics. Viscose rayon nonwoven fabrics were treated with organic silicon quaternary ammonium salt having carbon numbers of 16, which was synthesized for this study Antimicrobial activity was evaluated by shake flask method and the reactivity of antimicrobial agent was measured by degree of luminescence from inductively coupled plasma. Water repellency of treated specimen was evaluated by dynamic water absorption measurement and air permeability was measured by Frazier method. The results obtained from this study were as follows: 1. Excellent antimicrobial activity was obtained for the high concentration of treatment and the durability of finishing after laundering was better as the treatment concentration was higher 2. Silicon contents taken up by specimen increased with increased treatment concentration. 3. Dynamic water absortion of treated specimen decreased compared to that of untreated. And, it was lowered as the treatment of concentration increased and as the silicon content increased. 4. Moistuie regain and uptake with lapse of time of treated specimen increased compared to those of untreated. But, air permeability of treated specimen decreased.

• 분석과학
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• 제18권4호
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• pp.329-337
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• 2005

Pre-dose 연대측정법은 석영의 $110^{\circ}C$ TL 피크의 민감도가 매장 기간 동안 시료가 흡수한 pre-dose와 활성 온도까지의 열처리에 의해 변화되는 pre-dose 현상을 이용한 연대측정법이다. 이 연구에서는 서천 추동리 문화유적에서 채집된 후 화학적으로 분리된 석영시료를 대상으로 pre-dose 연대측정을 실시하였다. 자연축적선량 결정을 위하여 MA(Multiple Activation)법이 적용되었으며 활성온도는 시료의 민감도 변화를 고려하여 $500^{\circ}C$로 결정하였고 냉광(luminescence)의 합산은 $85-105^{\circ}C$ 영역에서 이루어졌다. 최종적으로 산출된 시료의 연대는 $1725{\pm}25$년(1 ${\sigma}$ SD)이었으며 오차 범위 내에서 방사성탄소 연대측정 결과와 정확히 일치하고 radiocarbon plateau에 포함된 방사성탄소 연대측정보다 높은 정밀도를 가짐을 알 수 있었다. 결론적으로 pre-dose 연대측정을 통하여 산출된 연대는 정밀도와 정확도의 높은 증가로 인하여 기원 이후의 고고학적 사건들에 대한 지시자로서의 역할이 가능하리라 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.324-325
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• 2011

최근에 고효율의 적색 형광체를 합성하여 형광 램프, 음극선관, X-선 검출기, 전계 발광 디스플레이에 응용하기 위하여 다양한 모체 결정과 활성체를 도핑하는 연구가 활발히 진행되고 있다. 본 연구에서는 $GdNbO_4$ 모체 결정에 $Eu^{3+}$ 이온 활성체를 주입하여 합성함으로써 새로운 적색 형광체의 발광 세기와 입자의 형상을 최적화 시키고자 한다. 형광체 분말 시료의 제조는 Eu의 함량을 0, 0.05, 0.10, 0.15, 0.20 mol로 변화시키면서 고상 반응법을 이용하여 합성하였다. 초기 물질 Gd2O3 (99.99%), $Nb_2O_5$ (99.99%), $Eu_2O_3$ (99.9%)를 화학 적량으로 측량하고 에탄올과 ZrO2 볼과 함께 플라스틱 병에 넣어 400 rpm의 속도로 24시간 볼밀 작업을 수행한 후에, 혼합된 분말의 볼을 걸러내고 60$^{\circ}C$에서 20시간 동안 건조하였다. 건조된 시료를 막자 사발에 넣고 잘게 갈아서 체로 걸러낸 다음에 세라믹 도가니에 넣고 전기로에서 분당 5$^{\circ}C$씩 승온하여 500$^{\circ}C$에서 10시간 동안 1차 하소한 후에, 계속 온도를 승온시켜 1,200$^{\circ}C$에서 3시간 동안 소결하여 합성하였다. XRD 회절 패턴의 경우에, $Eu^{3+}$의 함량에 관계없이 모든 세라믹은 JCPDS (22-1104)에 제시된 회절상과 일치하는 사방정계의 결정 구조를 가짐을 확인할 수 있었다. 주 피크는 28.4$^{\circ}$에서 최대값을 갖는 (121)면에서 발생하는 회절 신호이었다(Fig. 1). 적색 형광체 분말의 광학 및 표면 특성은 PL, PLE와 SEM으로 조사되었으며, 세라믹 분말의 형광 특성과 결정 구조, 표면 형상에 대한 자세한 논의가 제시될 것이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.95-98
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• 2013

The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ($D^0X$), two-electron satellite (TES), free-to-neutral-acceptors (e,$A^0$), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (TES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for $D^0X$ in the nanocrystalline ZnO thin film was found to be ~25 meV, corresponding to the thermal dissociation energy required for $D^0X$ transitions.

• 대한화학회지
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• 제57권5호
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• pp.547-553
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• 2013

전해연마를 한 지르코늄(Zr)을 가지고 $F^-$ 이온이 함유된 무기 전해질과 유기 전해질에서 2 단계 양극산화를 진행하여 산화 지르코늄($ZrO_2$) 나노 다공성 산화막을 제조하였다. 2 단계 양극산화를 진행하면서 무기 전해질에서보다 유기 전해질에서 만들어진 지르코늄 산화막이 보다 균일한 나노 다공성 산화막을 가지게 되었다. 나노 다공성 산화막의 크기와 구조는 FE-SEM(field emission scanning electron microscopy), XRD(X-ray diffraction), EDS(energy dispersive spectroscopy)를 이용하여 특성을 분석하였고 형광스펙트럼을 측정하여 $ZrO_2$ 나노 다공성 산화막의 형광성을 알아보았다.

• 한국재료학회지
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• 제18권4호
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• pp.199-203
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• 2008

High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.

• 한국재료학회지
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• 제24권7호
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• pp.351-356
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• 2014

A spherical $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor for use in white-light-emitting diodes was synthesized using a liquid-state reaction with two precipitation stages. For the formation of phosphor from a precursor, the calcination temperature was $1,100^{\circ}C$. The particle morphology of the phosphor was changed by controlling the processing conditions. The synthesized phosphor particles were spherical with a narrow size-distribution and had mono-dispersity. Upon excitation at 395 nm, the phosphor exhibited an emission band centered at 497 nm, corresponding to the $4f^65d{\rightarrow}4f^7$ electronic transitions of $Eu^{2+}$. The critical quenching-concentration of $Eu^{2+}$ in the synthesized $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor was 5 mol%. A phosphor-converted LED was fabricated by the combination of the optimized spherical phosphor and a near-UV 390 nm LED chip. When this pc-LED was operated under various forward-bias currents at room temperature, the pc-LED exhibited a bright blue-green emission band, and high color-stability against changes in input power. Accordingly, the prepared spherical phosphor appears to be an excellent candidate for white LED applications.