• Bulletin of the Korean Chemical Society
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• 제22권9호
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• pp.1005-1008
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• 2001

The lanthanide complexes have been anticipated to exhibit high efficiency along with a narrow emission spectrum. Photoluminescence for the lanthanide complex is characterized by a high efficiency since both singlet and triplet excitons are involve d in the luminescence process. However, the maximum external electroluminescence quantum efficiencies have exhibited values around 1% due to triplet-triplet annihilation at high current. Here, we proposed a new energy transfer mechanism to overcome triplet-triplet annihilation by the Eu complex doped into phosphorescent materials with triplet levels that were higher than singlet levels of the Eu complex. In order to show the feasibility of the proposed energy transfer mechanism and to obtain the optimal ligands and host material, we have calculated the effect depending on ligands as a factor that controls emission intensity in lanthanide complexes. The calculation shows that triplet state as well as singlet state of anion ligand affects on absorption efficiency indirectly.

• Current Optics and Photonics
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• 제6권4호
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• pp.413-419
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• 2022

An oxyfluoride glass ceramic containing Eu²⁺-doped nepheline and LaF₃ crystals was modified, with BaF₂ replacing LaF₃ up to 20 mole percent, and its luminescence change was monitored. With increasing BaF₂ content, the greenish yellow emission centered at 540 nm under 400-nm excitation decreased, and a new afterglow emission from the modified ceramic was observed after removal of the excitation light source. X-ray diffraction (XRD) and transmission electron microscopy with energy dispersive spectroscopy (TEM-EDS) were used to investigate the changes in the crystalline phases within the glass matrix. Time dependent emission intensity was monitored to observe the afterglow, and the possible mechanism for the afterglow due to BaF₂ addition was considered.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.49-52
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• 2009

We have investigated the effect of the surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of ITO thin films, we have processed photolithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the ITO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the ITO thin films. Device structure was ITO/$\alpha$-NPD/DPVB/Alq3/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer (minolta CS-1000A). The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.25-29
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• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

• 한국진공학회지
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• 제6권4호
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• pp.337-342
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• 1997

GaAs내의 철(Fe)의 상태에 관한 연구를 위하여, 액상에피탁시 방법으로 Fe를 도프 한 GaAs를 성장하고 성장된 에피층의 특성을 연구하였다. 도판트 물질인 Fe는 동위원소 $^{57}Fe$를 사용하였고, Fe이온의 GaAs내에서의 전하상태를 Mossbauer분광실험으로 분석하였 다. Mossbauer 스펙트럼으로부터 isomer shift 값을 계산한 결과 Fe 이온은 GaAs내에서 +3 가 이온 상태로 존재함을 알 수 있었다. X-ray 분석 및 photoluminescence(PL) 분광실험으 로부터 결정성이 우수한 에피층이 성장되었음을 알 수 있었으며, Fe가 도프된 GaAs의 저온 PL에서 0.99eV 및 1.15eV에서 피크를 갖는 반치폭이 매우 큰 발광대를 관찰 할 수 있었다. 이들 피크는 GaAs내 Fe 억셉터와 관련된 2개의 복사성 깊은 준위를 반영하는 발광현상으 로 해석된다.

• 분석과학
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• 제18권4호
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• pp.329-337
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• 2005

Pre-dose 연대측정법은 석영의 $110^{\circ}C$ TL 피크의 민감도가 매장 기간 동안 시료가 흡수한 pre-dose와 활성 온도까지의 열처리에 의해 변화되는 pre-dose 현상을 이용한 연대측정법이다. 이 연구에서는 서천 추동리 문화유적에서 채집된 후 화학적으로 분리된 석영시료를 대상으로 pre-dose 연대측정을 실시하였다. 자연축적선량 결정을 위하여 MA(Multiple Activation)법이 적용되었으며 활성온도는 시료의 민감도 변화를 고려하여 $500^{\circ}C$로 결정하였고 냉광(luminescence)의 합산은 $85-105^{\circ}C$ 영역에서 이루어졌다. 최종적으로 산출된 시료의 연대는 $1725{\pm}25$년(1 ${\sigma}$ SD)이었으며 오차 범위 내에서 방사성탄소 연대측정 결과와 정확히 일치하고 radiocarbon plateau에 포함된 방사성탄소 연대측정보다 높은 정밀도를 가짐을 알 수 있었다. 결론적으로 pre-dose 연대측정을 통하여 산출된 연대는 정밀도와 정확도의 높은 증가로 인하여 기원 이후의 고고학적 사건들에 대한 지시자로서의 역할이 가능하리라 기대된다.

• Journal of Information Display
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• 제2권3호
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• pp.1-5
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• 2001

The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

• 한국표면공학회지
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• 제41권5호
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• pp.199-204
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• 2008

Indium tin oxide (ITO) has been commonly used as an anode for organic light emitting diode (OLED), because of its relatively high work function, high transmittance, and low resistance. The ITO was mostly deposited by capacitive type DC or RF sputtering. In this study we introduced a new facing target sputtering method. On applying this new sputtering method, the effect of fundamental deposition parameters such as substrate heating and post etching were investigated in relation to the resultant I-V-L characteristics of OLED. Three kinds of ITOs deposited at room temperature, at $400^{\circ}C$ and at $400^{\circ}C$ with after surface modification by $O_2$ plasma etching were compared. The OLED on ITO deposited with substrate heating and followed by etching showed better I-V-L characteristics, which starts to emit light at 4 volts and has luminescence of $65\;cd/m^2$ at 9 volts. The better I-V-L characteristics were ascribed to the relevant surface roughness with uniform micro-extrusions and to the equi-axed micromorphology of ITO surface.

• International Journal of Contents
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• 제8권2호
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• pp.52-59
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• 2012

This study uses digital imaging and communications in medicine (DICOM) files acquired after CT scan to obtain the absorbed dose distribution inside the body by using the patient's actual anatomical data; uses geometry and tracking (Geant)4 as a way to obtain the accurate absorbed dose distribution inside the body. This method is easier to establish the radioprotection plan through estimating the absorbed dose distribution inside the body compared to the evaluation of absorbed dose using thermo-luminescence dosimeter (TLD) with inferior reliability and accuracy because many variables act on result values with respect to the evaluation of the patient's absorbed dose distribution in diagnostic imaging and the evaluation of absorbed dose using phantom; can contribute to improving reliability accuracy and reproducibility; it makes significance in that it can implement the actual patient's absorbed dose distribution, not just mere estimation using mathematical phantom or humanoid phantom. When comparing the absorbed dose in polymethly methacrylate (PMMA) phantom measured in metal oxide semiconductor field effect transistor (MOSFET) dosimeter for verification of Geant4 and the result of Geant4 simulation, there was $0.46{\pm}4.69%$ ($15{\times}15cm^2$), and $-0.75{\pm}5.19%$ ($20{\times}20cm^2$) difference according to the depth. This study, through the simulation by means of Geant4, suggests a new way to calculate the actual dose of radiation exposure of patients through DICOM interface.

• Bulletin of the Korean Chemical Society
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• 제32권spc8호
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• pp.2988-2996
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• 2011

Shape memory polyurethane (SMPU), grafted with a fluorescent dye (Rhodamine, Mehylene violet, or Fluorescein) through an allophanate linking, was tested for the fluorescence and the shape recovery effect. The main chain of SMPU was composed of 4,4'-methylenebis(phenylisocyanate) (MDI), poly(tetramethyleneglycol) (PTMG), and 1,4-butanediol (BD), and a fluorescent dye was connected through a second MDI linked to the carbamate moiety of the main chain. Three series of SMPU, differing according to their dye content, were prepared to compare their shape recovery and fluorescence properties. In tensile mechanical property, maximum stress increased up to 350% compared to the linear SMPU, and strain remained above 2000%. Shape recovery went to as high as 97%, and remained almost same after repetitive shape recovery test cycles. Finally, the fluorescence emission of SMPU was demonstrated in the luminescence spectrum and fluorescent light emission pictures. In addition, the response of SMPU to external stimuli such as metal ions was investigated.