• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.893-896
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• 2005

This paper describes Low Noise Amplifier(LNA) and Single Balanced Mixer(SBM) with monolithic image rejection notch filter using 0.5um MESFET process. LNA, Notch filter, and SBM were integrated on a chip. This chip does not need off chip SAW filter, thereby reducing the overall cost and system volume. The LNA with Notch filter provides a gain of 15dB, noise figure of 1.2dB, and image rejection ratio of -74dB. The SBM has a conversion gain of 6dB.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.2
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• pp.363-368
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• 2009

In the paper, we confirmed improvement Noise figure of the entire RF front-end using spiral inductor with PGS(Patterned Ground Shield) and current bleeding techniques. LNA design is to achieve simultaneous noise and input matching. Spiral inductor in input circuit of LNA inserted PGS for betterment of Q-factor. we modeling inductor using EM simulator, so compared with inductor of TSMC 0.18um. We designed and simulation the optimum structure of PGS using Taguchi's method. We confirmed enhancement of noise figure at LNA after substituted for inductor with PGS. Mixer designed using current bleeding techniques for reduced noise. We designed LNA using inductor with PGS and Mixer using current bleeding techniques, so confirmed improvement of noise figure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.4
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• pp.443-450
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• 2016

The linearization technique for low noise amplifier (LNA) has been implemented in standard $0.18-{\mu}m$ BiCMOS process. The MOS-BJT derivative superposition (MBDS) technique exploits a parallel LC tank in the emitter of bipolar transistor to reduce the second-order non-linear coefficient ($g_{m2}$) which limits the enhancement of linearity performance. Two feedback capacitances are used in parallel with the base-collector and gate-drain capacitances to adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors to improve the linearity characteristics. The MBDS technique is also employed cascode configuration to further reduce the second-order nonlinear coefficient. The proposed LNA exhibits gain of 9.3 dB and noise figure (NF) of 2.3 dB at 2 GHz. The excellent IIP3 of 20 dBm and low-power power consumption of 5.14 mW at the power supply of 1 V are achieved. The input return loss ($S_{11}$) and output return loss ($S_{22}$) are kept below - 10 dB and -15 dB, respectively. The reverse isolation ($S_{12}$) is better than -50 dB.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.2
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• pp.257-262
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• 2012

The Ministry of Information-Communication assigned 18~19GHz frequency band for communication of cabins and platform to link between subway/train and it's station. In this paper, we propose wireless transmission devices which are 2 stage hybrid low noise amplifier of 18GHz band and mixer for 18GHz as well to apply for RF receiver. We designed LNA to be noise matched its 1st stage and gain matched for 2nd stage and mixer using $180^{\circ}$ hybrid coupler to suppress the spurious signal. The transistors of 18 GHz LNA and mixer are NE3210S01 of NEC and KMB-N51-1, respectively. As the result of simulation, we get 19.92dB gain and 2.06dB noise figure with LNA and 8.61dB conversion loss with mixer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.765-768
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• 2003

본 논문에서는 Noise Figure, IP3, Gain, power dissipation들을 최대한 고려하여 간단하면서도 훌륭한 성능을 보이는 PCS용 1.9 GHz CDMA Low Noise Amplifier를 설계하였다. 비록 본 논문에서는 특정한 트랜지스터를 이용하여 설계하였지만, 다른 트랜지스터를 사용하여 이러한 방법으로 설계하여도 무관할 것이다.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2034-2036
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• 2004

In this paper, a low noise amplifier (LNA) in receiver of Low Noise Block Down Converter (LNB) for direct broadcasting service (DBS) is implemented by using GaAs HEMT. The LNA is designed for operation between 10.7GHz-12.7GHz. The LNA consists of input, output matching circuits, DC-blocks and RF-chokes. Simulation result of the LNA shows that a noise figure is less than 1.4dB and a gain is greater than 9.2dB in the bandwidth of 10.7 to 12.7GHz with good flatness of 0.1dB.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.369-372
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• 2004

In this paper, a low noise amplifier (LNA) in receiver of Low Noise Block Down Converter (LNB) for direct broadcasting service (DBS) is implemented by using GaAs HEMT The LNA is designed for operation between 10.7GHz-12.7GHz. The LNA consists of input, output matching circuits, DC-blocks and RF-chokes. The result of simulation of the LNA shows that a noise figure is less than 1.4dB and a gain is gloater than 9.2dB in the bandwidth of 10.7 to 12.7GHz with good flatness of 0. ldB

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.100-105
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• 2006

In this paper, a low noise amplifier(LNA) in a receiver of a low noise block down converter (LNB) for direct broadcasting service(DBS) is implemented using GaAs HEMT. The LNA is designed for the bandwidth of 11.7 GHz-12.2 GHz. The two-stage LNA consists of a input matching circuit, a output matching circuit, DC-blocks and RF-chokes. Experimental results of the LNA show the noise figure less than 1.4 dB, the gain greater than 23 dB and the flatness of 1 dB in the bandwidth of 11.7 to 12.2 GHz.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2318-2320
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• 2005

In this paper, a low noise amplifier(LNA) in a receiver of a Low Noise Block Down Converter (LNB) for direct broadcasting service(DBS) is implemented using GaAs HEMT. The LNA is designed for the bandwidth of 11.7GHz-12.2GHz. The 2stage-LNA consists of a input matching circuit, a output matching circuit, DC-blocks and RF-chokes. The result of a simulation of the LNA using Advanced Design System(ADS) shows the noise figure less than 1.4dB, the gain greater than 23dB and the flatness of 1dB in the bandwidth of 11.7 to 12.2GHz.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.409-412
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• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.