• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.159-159
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• 2007

In order to reduce a signal delay in ULSI, low resistive metal and intermetal dielectric material of low dielectric constant are required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. In this study, ordered mesoporous silica films was synthesized using TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-$76^{(R)}$ surfactant. These films had the porosity of 40% and dielectric constant of 2.5. To lower dielectric constant, the ordered mesoporous silica films were surface-modified by HMDS (hexamethyldisilazane) treatment. HMDS substituted -OH groups on the surface of silica wall for -Si$(CH_3)_3$ groups. After the HMDS treatment, ordered mesoporous silica films were calcined at various calcination temperatures. Through the investigation, it was concluded that the proper calcination temperature is necessary as aspects of structural, electrical, and mechanical properties.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.48-48
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• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.362-367
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• 2008

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/$O_2$ could have low dielectric constant about $k\sim2$, and react sensitively. Also dielectric constant could be decreased by the effects of decreasing $CH_3$ and growing Si-O-Si(C) after annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.33-33
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• 2007

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

• Journal of electromagnetic engineering and science
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• v.6 no.1
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• pp.1-9
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• 2006

A sandwich structure of dielectric material and air gap inside a rectangular waveguide is proposed as a fast electrically tunable low-loss phase shifter. As the dielectric material is shifted up and down by piezoelectric actuator and, thereby, the thickness of air gap is changed, the effective dielectric constant of the sandwich structure is varied. Phase shifters based on the sandwich structure with different dielectric materials showed phase shift of $20{\sim}200^{\circ}/cm$ at X-band as the thickness of air gap varied up to $30{\mu}m$. The idea can be extended toward low-loss millimeter wave phase shifters since modem microwave ceramics have been developed to show very low dielectric loss$(tan\;{\delta}{\sim}10^{-4})$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1466-1468
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• 1996

The standards of the capacitance arc measured and analyzed by the dry nitrogen or mica film as a dielectric. In this paper, respectively the standard capacitors of 10 pF and 100 pF for the establishment of the dielectric loss tangent are made by $Al_{2}O_{3}$ crystal disc with the low dielectric loss tangent, and then measured the dielectric loss tangent with precision. To regard for the existence of capacitances just in the dielectric, 3-terminal configuration electrode is used. With using the 2D electric field simulator, precise design values are derived in addition to stray capacitance. As stated above method, respectively the standards of the capacitances with 10 pF and 100 pF arc made with the low dielectric loss tangent less than $10^{-4}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• Macromolecular Research
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• v.15 no.2
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• pp.114-128
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• 2007

Polyimides are one of the most important classes of polymers used in the microelectronics and photoelectronics industries. Because of their high thermal stability, chemical resistance, and good mechanical and electric properties, polyimides are often applied in photoresists, passivation and dielectric films, soft print circuit boards, and alignment films within displays. Recently, fully aliphatic and alicyclic polyimides have found applications as optoelectronics and inter layer dielectric materials, due to their good transparencies and low dielectric constants $(\varepsilon)$. The low molecular density, polarity and rare probability of forming inter- or intra-molecular charge transfers, resulting in lowering of the dielectric constant and high transparency, are the most striking characteristics of aliphatic polyimide. However, the ultimate end use of polyimides derived from aliphatic monomers is in their targeted applications that need less stringent thermal requirements. Much research effort has been exerted in the development of aliphatic polyimide with increased thermal and mechanical stabilities, while maintaining their transparencies and low dielectric constants, by the incorporation of rigid moieties. In this article, the recent research process in synthesizing fully aliphatic polyimides, with improved dimensional stability, high transparency and low $\delta$values, as well as the characterizations and future scope for their application in micro electric and photo-electronic industries, is reviewed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.10-15
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• 1990

Theory and experimental results of measuring the microwave dielectric characteristics of low-loss materials by using dielectric rod resonator method are presented. The $TE_{011}$ mode resonance frequency was adapted to minimize the effect of the air gap between the rod and the conducting plates. The dielectric properties were computed from the resonance frequency, sample geometry and 3 dB bandwidth. The error of measurements was within ${\pm}3{\%}$ for dielectric constant and was within ${\pm}12{\%}$ for dielectric loss.