• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.78-84
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• 2012

In this paper, we introduced the design technique about a Ka band receive module for millimeter wave seekers. The receiver module consists of a waveguide, circulator and transition for antenna connection, and a limiter and gain control amplifier for receiver protection. This module is comprised of a sum, azimuth and elevation channel for receiving monopules signal, and a SLB channel for the acquisition of jamming signal. In this paper, receiver gain and range of gain control dependent on ADC nonlinear characteristic was analyzed and designed for wide dynamic range receive. In the test result of the fabricated Ka-band receive, the frequency band is 1 GHz, the noise figure is as low as 8.2 dB, the gain is $56{\pm}2dB$, the dynamic range is 135 dB, the gain congtrol is more than 86 dB, the channel isolation is more than 35 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.3
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• pp.263-268
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• 2002

DFDM is a good candidate for beyond-3G high-speed wireless communication application because of the robustness to the intersymbol interference and multipath fading. However. an OFDM signal has a serious problem of the high PAPR, which results in the significant nonlinear distortion when it passes through a nonlinear high power amplifier. We propose a new PAPR reduction method using pre-emphasis and clipping. Via the proposed method, the OFDM output signal can have a low PAPR and BER improvement. Then. de-emphasis process is requisite in OFDM receiver. PAPR is reduced to about 5.7 ㏈ at the CCDF= 10$\^$-3/ when the subcarrier number is 16, QPSK modulation is used. pre-emphasis change point Is 3/9 of the peak amplitude of the IFFT output and clipping level is 11 in the IFFT output amplitude. The required SNR at BER=10$\^$-3/ the proposed system is improved by 2 dB than that of the original OFDM system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.294-301
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• 2000

One of the most important design parameters in a microwave radio transmitting system is to reduce spurious response from the output spectrum of the transmitting system. A Local oscillator (LO) is seldom totally pure and at the least contain some LO harmonic signals. A LO or any oscillator is a transmitter if provided with a suitable radiator, conduction, or leakage path. Where mixer is employed in the output of the LO mixer generated spurs can be increased by RF amplifier. To reduce LO leakage, notch filter or band pass filter has been conventionally used. In this paper, the leakage reduction(LR) signal, which has the same magnitude and the opposite phase with respect to LO leakage signal, is added to the output of mixer of the wireless LAN system. The LO leakage is reduced by 30 dB more than the conventional methods do. The proposed method is potentially suitable for low-cost, reliable, and simple application of monolithic microwave integrated circuits (MMICs)

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.3
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• pp.632-638
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• 2011

This paper presents on-chip Design-for-Testability (DFT) circuit for radio frequency System-on-Chip (SoC) applications. The proposed circuit measures functional specifications of RF integrated circuits such as input impedance, gain, noise figure, input voltage standing wave ratio (VSWRin) and output signal-to-noise ratio (SNRout) without any expensive external equipment. The RF DFT scheme is based on developed theoretical expressions that produce the actual RF device specifications by output DC voltages from the DFT chip. The proposed DFT showed deviation of less than 2% as compared to expensive external equipment measurement. It is expected that this circuit can save marginally failing chips in the production testing as well as in the RF system; hence, saving tremendous amount of revenue for unnecessary device replacements.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.449-455
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• 2004

This paper presents a novel defect detection method for one chip RF front end with fault detection circuits using input matching measurement. We present a BIST circuit using 40.25{\mu}m$ CMOS technology. We monitor the input transient voltage of the RF front end to differentiate faulty and fault-free RF front end. Catastrophic as well as parametric variation fault models are used to simulate the faulty response of the RF front end. This technique has several advantages with respect to the standard approach based on current test stimulus and frequency domain measurement. Because DUT and fault detection circuits are implemented in the same chip, this test technique only requires use of digital voltmeter (RMS meter) and RF voltage source generator for simpleand inexpensive testing.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.63-73
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• 2015

This work proposes a 2-channel time-interleaved (T-I) 10b 120MS/s pipeline SAR ADC minimizing offset mismatch between channels without any calibration scheme. The proposed ADC employs a 2-channel SAR and T-I topology based on a 2-step pipeline ADC with 4b and 7b in the first and second stage for high conversion rate and low power consumption. Analog circuits such as comparator and residue amplifier are shared between channels to minimize power consumption, chip area, and offset mismatch which limits the ADC linearity in the conventional T-I architecture, without any calibration scheme. The TSPC D flip-flop with a short propagation delay and a small number of transistors is used in the SAR logic instead of the conventional static D flip-flop to achieve high-speed SAR operation as well as low power consumption and chip area. Three separate reference voltage drivers for 4b SAR, 7b SAR circuits and a single residue amplifier prevent undesirable disturbance among the reference voltages due to each different switching operation and minimize gain mismatch between channels. High-frequency clocks with a controllable duty cycle are generated on chip to eliminate the need of external complicated high-frequency clocks for SAR operation. The prototype ADC in a 45nm CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 0.77LSB, with a maximum SNDR and SFDR of 50.9dB and 59.7dB at 120MS/s, respectively. The proposed ADC occupies an active die area of 0.36mm2 and consumes 8.8mW at a 1.1V supply voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1055-1063
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• 2013

Low noise amplifiers(LNAs) are an integral component of RF receivers and are frequently required to operate at wide frequency bands for various wireless systems. For wideband operation, important performance metrics such as voltage gain, return loss, noise figures and linearity have been carefully investigated and characterized for the proposed LNA. An inductive shunt feedback configuration is successfully employed in the input stage of the proposed LNA which incorporates cascaded networks with a peaking inductor in the buffer stage. Design equations for obtaining low and high input matching frequencies are easily derived, leading to a relatively simple method for circuit implementation. Careful theoretical analysis explains that poles and zeros are characterized and utilized for realizing the wideband response. Linearity is significantly improved because the inductor between gate and drain decreases the third-order harmonics at the output. Fabricated in $0.18{\mu}m$ CMOS process, the chip area of this LNA is $0.202mm^2$, including pads. Measurement results illustrate that input return loss shows less than -7 dB, voltage gain greater than 8 dB, and a little high noise figure around 7~8 dB over 1.5~13 GHz. In addition, good linearity(IIP3) of 2.5 dBm is achieved at 8 GHz and 14 mA of current is consumed from a 1.8 V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.55-64
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• 2006

This work proposes a calibration-free 14b 70MS/s 0.13um CMOS ADC for high-performance integrated systems such as WLAN and high-definition video systems simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs signal insensitive 3-D fully symmetric layout techniques in two MDACs for high matching accuracy without any calibration. A three-stage pipeline architecture minimizes power consumption and chip area at the target resolution and sampling rate. The input SHA with a controlled trans-conductance ratio of two amplifier stages simultaneously achieves high gain and high phase margin with gate-bootstrapped sampling switches for 14b input accuracy at the Nyquist frequency. A back-end sub-ranging flash ADC with open-loop offset cancellation and interpolation achieves 6b accuracy at 70MS/s. Low-noise current and voltage references are employed on chip with optional off-chip reference voltages. The prototype ADC implemented in a 0.13um CMOS is based on a 0.35um minimum channel length for 2.5V applications. The measured DNL and INL are within 0.65LSB and l.80LSB, respectively. The prototype ADC shows maximum SNDR and SFDR of 66dB and 81dB and a power consumption of 235mW at 70MS/s. The active die area is $3.3mm^2$.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.27-37
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• 1999

A CMOS ReadOut Integrated Circuit (ROlC) for InfraRed Focal Plane Array (IRFPA) detector is presented, which is a key component in uncooled thermal imaging systems. The ROIC reads out signals from $64\times64$ Barium Strontium Titanate (BST) infrared detector array, then outputs pixel signals sequentially after amplifying and noise filtering. Various design requirements and constraints have been considered including impedance matching, low noise, low power dissipation and small detector pitch. For impedance matching between detector and pre~amplifier, a new circuit based on MOS diode structure is devised, which can be easily implemented using standard CMOS process. Also, tunable low pass filter with single~pole is used to suppress high frequency noise. In additions, a clamping circuit is adopted to enhance the signal~to-noise ratio of the readout output signals. The $64\times64$ IRFPA ROIC is designed using $0.65-\mu\textrm{m}$ 2P3M (double poly, tripple metal) N~Well CMOS process. The core part of the chip contains 62,000 devices including transistors, capacitors and resistors on an area of about $6.3-mm\times6.7-mm$.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.39-46
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• 2016

This paper describes the third order feedforward delta-sigma modulator with inverter-based integrators and a 1.5bit comparator for the application of audio signal processing. The proposed 3rd-order delta-sigma modulator is multi-bit structure using 1.5 bit comparator instead of operational amplifier. This delta-sigma modulator has high SNR compared with single-bit 4th-order delta-sigma modulator in a low OSR. And it minimizes power consumes and simplified circuit structure using inverter-based integrator and using inverter-based integrator as analogue adder. The modulator was designed with 0.18um CMOS standard process and total chip area is $0.36mm^2$. The measured power cosumption is 28.8uW in a 0.8V analog supply and 66.6uW in a 1.8V digital supply. The measurement result shows that the peak SNDR of 80.7 dB, the ENOB of 13.1bit and the dynamic range of 86.1 dB with an input signal frequency of 2.5kHz, a sampling frequency of 2.56MHz and an oversampling rate of 64. The FOM (Walden) from the measurement result is 269 fJ/step, FOM (Schreier) was calculated as 169.3 dB.