• Korean Journal of Materials Research
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• v.18 no.12
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• pp.640-644
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• 2008

ZnO/ZnS core/shell nanocrystals (${\sim}5-7\;nm$ in diameter) with a size close to the quantum confinement regime were successfully synthesized using polyol and thermolysis. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) analyses reveal that they exist in a highly crystalline wurtzite structure. The ZnO/ZnS nanocrystals show significantly enhanced UV-light emission (${\sim}384\;nm$) due to effective surface passivation of the ZnO core, whereas the emission of green light (${\sim}550\;nm$) was almost negligible. They also showed slight photoluminescence (PL) red-shift, which is possibly due to further growth of the ZnO core and/or the extension of the electron wave function to the shell. The ZnO/ZnS core/shell nanocrystals demonstrate strong potential for use as low-cost UV-light emitting devices.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1491-1492
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• 2011

In this study, we investigated about the effect of hole transport layer materials(${\alpha}$-NPD, TPD) depending on the electrical properties of organic light emitting diode. In deposition method, we used thermal evaporation and it was a method for performing thin film by attaching vaporizing a molecule to substrate in a high thermal and vaccum. We analyzed luminance, current density, external quantum efficiency and current efficiency in 40 [nm] as optimization thickness of ${\alpha}$-NPD and TPD. In result of experiment, maximum luminance of TPD had 1.1 times higher than ${\alpha}$-NPD, but ${\alpha}$-NPD had luminance, external quantum efficiency, and current efficiency higher than TPD in low operating voltage. Actually, ${\alpha}$-NPD had efficiency higher than TPD in low operating voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.40-46
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• 2019

To study the frequency response characteristics of alternating-current-driven organic light-emitting diodes (OLEDs), we fabricated blue-fluorescent OLEDs and analyzed their electroluminescent characteristics according to the alternating current voltage and frequency. The luminance-frequency characteristics of alternating-current-driven OLED was similar to that of a low-pass filter, and the luminance of high-voltage OLED decreased at higher frequency than low-voltage OLED. The luminance characteristics of the OLED according to the frequency is due to the capacitive reactance in the OLED, generated during the alternating current driving. The frequency response characteristics of the OLED according to the voltage is due to the decrease in internal resistance of the organic layer. In addition, the negative voltage component of the alternating current did not affect the frequency response of the OLED. Therefore, the electroluminescent characteristics of OLED with an alternating current power of 60 Hz are not influenced by the frequency.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.249-254
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• 2022

To achieve high-performance colloidal quantum dot light-emitting diodes (QD-LEDs), the use of a densely packed QD film is crucial to prevent the formation of leakage current pathways and increase in interface resistance. Spin coating is the most common method to deposit QDs; however, this method often produces pinholes that can act as short-circuit paths within devices. Since state-of-the-art QD-LEDs typically employ mono- or bi-layer QDs as an emissive layer because of their low conductivities, the use of a densely packed and pinhole-free QD film is essential. Herein, we introduce the Langmuir-Blodgett (LB) technique as a deposition method for the fabricate densely packed QD films in QD-LEDs. The LB technique successfully transfers a highly dense monolayer of QDs onto the substrate, and multilayer deposition is performed by repeating the transfer process. To validate the comparability of the LB technique with the standard QD-LED fabrication process, we fabricate and compare the performance of LB-based QD-LEDs to that of the spin-coating-based device. Owing to the non-destructiveness of the LB technique, the electroluminescence efficiency of the LB-based QD-LEDs is similar to that of the standard spin coating-based device. Thus, the LB technique is promising for use in optoelectronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.416-417
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• 2007

We prepared flexible transparent conducting electrodes by spray coating of single-walled carbon nanotube (SWNT) networks on PET substrate and have demonstrated their use as transparent anodes for flexible organic light emitting diodes (OLEDs). The flexible CNT electrode produced by spray coating method shows relatively low sheet resistance ($150{\sim}220{\Omega}/sq.$) and high transmittance of ~60% even though it was prepared at room temperature. In addition, CNT electrode/PET sample exhibits little resistance change during 2000 bending cycles, demonstrated good mechanical robustness. Using transparent CNT electrode, it is readily possible to achieve performances comparable to commercial ITO-based OLEDs. This indicates that flexible CNT electrode is alternative anode materials for conventional ITO anode in flexible OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.55-60
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• 2018

Transparent conductive thin films (TCFs) are essential materials for solar cells, organic light-emitting diodes, and display panels. Indium tin oxide (ITO) is one of the most widely used commercial materials to create TCFs'; however, new materials that can possibly replace ITO at a lower cost and/or those possessing mechanical flexibility are urgently needed. Silver nanowire (AgNW) is one of those promising materials, as it is less expensive and possesses superior mechanical flexibility as compared to ITO. We used AgNW and sol-gel ZnO to fabricate composite thin films by spray coating. We propose two spray-coating methods: the 'metal-organic chemical vapor deposition (MOCVD)/AgNW' method and the Mixture method. These two methods are expected to be commercialized for high-quality and low-cost products, respectively.

• Korean Journal of Materials Research
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• v.32 no.7
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• pp.320-325
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• 2022

Single OLED and tandem OLED was manufactured to analyze the electroluminescence characteristics of DC driving, AC driving, and full-wave rectification driving. The threshold voltage of OLED was the highest in DC driving, and the lowest in full-wave rectification driving due to an improvement of current injection characteristics. The luminance at a driving voltage lower than 10.5 V (8,534 cd/m²) of single OLED and 20 V (7,377 cd/m²) of a tandem OLED showed that the full-wave rectification drive is higher than that of DC drive. The luminous efficiency of OLED is higher in full-wave rectification driving than in DC driving at low voltage, but decrease at high voltage. The full-wave rectification power source may obtain higher current density, higher luminance, and higher current efficiency than the AC power source. In addition, it was confirmed that the characteristics of AC driving and full-wave rectification driving can be predicted from DC driving characteristics by comparing the measured values and calculated values of AC driving and full-wave rectification driving emission characteristics. From the above results, it can be seen that OLED lighting with improved electroluminescence characteristics compared to DC driving is possible using full-wave rectification driving and tandem OLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Korean Journal of Metals and Materials
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• v.48 no.5
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.309-314
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• 2022

Carbon dots (CDs) are few nanometer-sized carbon-based nanoparticles and emerging candidate materials in various fields such as biosensors and bioimaging due to their excellent optical properties and high biocompatibility. However, most CDs, emitting blue light, have limited their application in biomedical fields due to the low penetration of short-wavelength lights into the biological system. Therefore, there has been enormous need to develop long-wavelength emitting CDs. In this study, red-emitting CDs were successfully synthesized through the hydrothermal reaction of p-phenylenediamine with hydrochloric acid. In addition, the effect of the amount of hydrochloric acid on the formation of carbon dots, resulting in the variation of the chemical structures of CDs, were investigated, which was confirmed with the intensive structural analyses using infrared and X-ray photoelectron spectroscopy. It was found that the chemical structure of CDs governed their optical properties and quantum yield. Therefore, this study provides an insight into the role of acid in forming red-emitting CDs as the optimal probe for biomedical application.