• 공업화학
• /
• 제21권3호
• /
• pp.343-348
• /
• 2010

저밀도 폴리에틸렌(low density polyethylene, LDPE) 필름의 표면을 다양한 반응 조건하에서 함산소불소화하여 hydroperoxide 관능기를 도입시켜 표면특성을 변화시켰다. 또한 생성된 hydroperoxide 관능기를 반응 개시제로 친수성 그룹을 가지는 단량체인 acryl amide (AM)와 소수성 그룹을 가지는 단량체인 methyl methacrylate (MMA)를 그라프트 중합시켜 LDPE 필름의 표면을 2차 개질하였다. 또한 LDPE, 함산소불소화 된 LDPE (OFPE), AM 및 MMA 단량체가 그라프트 된 OFPE 필름의 표면특성은 1,1-diphenyl-2-picrylhydrazyl (DPPH), 감쇠전반사 분광법, 시차주사 열량분석기 및 접촉각 측정법 등으로 분석하였다. DPPH 라디칼 분석법의 결과로부터, OFPE의 hydroperoxide 관능기의 양은 함산소불소화 총압력과 F2 가스의 부분압이 증가함에 따라 증가함을 알 수 있었다. 접촉각 및 표면 자유에너지 분석결과로부터, 함산소불소화에 의해서 생성된 hydroperoxide 관능기와 AM과 같은 친수성 그룹을 가지는 단량체의 그라프트 중합은 LDPE 필름 표면에서 물과 같은 친수성 용매의 접촉각을 감소시키고, MMA와 같은 소수성 그룹을 가지는 단량체의 경우는 LDPE 필름 표면에서 methylene diiodide와 같은 비극성 용매의 표면 접촉각을 감소시켰다. 이는 AM 및 MMA 단량체의 그라프트 중합에 의한 것으로, LDPE 필름 표면은 친수성 및 소수성 용매에 대한 젖음성이 향상되었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.306-306
• /
• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.471.2-471.2
• /
• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• 한국재료학회지
• /
• 제21권12호
• /
• pp.703-707
• /
• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

• 센서학회지
• /
• 제15권3호
• /
• pp.173-178
• /
• 2006

Silica aerogel with ultra low density and high porosity has been focused on versatile application due to its fascinating properties. Ambient drying process of waterglass, in this study was researched to fabricate a crack-free monolith body in the point view of cost effective way. Wet gel was obtained by removing of $Na^{+}$ ions in waterglass, which contains 8 wt% of $SiO_{2}$. Xylene, which has a low vapor pressure, was used as a solution substitutor to prevent the formation a cracks during drying. Various surface modifiers like as hexamethyldisilazane (HMDSZ), trimethylchlorosilane (TMCS), methyltriethoxylsilane (MTES), methyltrimethoxysilane (MTMS) and phenyltriethoxysilane (PTES) were used in order to improve hydrophobicity of the waterglass Silica aerogel. Some physical properties of the surface modified aerogels were investigated by FT-IR, TGA, BET and SEM. Hydrophobicity and hydrophilicity of Silica aerogel is attributed to the Si-OH bond and the non-polar C-H bond groups on the surface of aerogel. Crack-free waterglass aerogel with >90 % of porosity, 17 nm of pore size and <0.15 $g/cm^{3}$ of density was prepared. HMDSZ and TMCS are effective as a surface modifier

• 설비공학논문집
• /
• 제8권1호
• /
• pp.151-165
• /
• 1996

Relation between condensate retention and heat transfer performance is studied for condensation of CFC-11 on horizontal integral-fin tubes. Eight tubes with trapezoidally shaped integral fin density from 738fpm to 1654fpm and 10, 30 grooves are tested. The liquid retention angles are measured by the height gauge, and each tube is tested under static(non-condensing) condition (CFC-11, water) and under dynamic(condensing) condition (CFC-11). The analytical model predicts the amount of liquid retention on a horizontal integral-fin tubes within＋10 percent over most of the data. Average retention angle increases as both surface tension-to-density ratio($\sigma/\rho$) and fin density(fpm) increase, The tube having a fin density of 1299~1654fpm has the best heat transfer performance. The amount of surface flooding must keep below of 40 percent for best heat transfer performance at condensation. The tube having low number of fin density must be used for fluids having high values of $\sigma/\rho$(water, (TEX)$NH_3$, ect.) and the tube having high number of fin density must be used for the fluid having low values of $\sigma/\rho$(R-11, R-22, etc.)

• Food Science and Biotechnology
• /
• 제16권2호
• /
• pp.234-237
• /
• 2007

Water resistance of three biopolyester films, such as poly-L-lactate (PLA), poly-hydroxybutyrate-co-valerate (PHBV), and Ecoflex, and low density polyethylene (LDPE) film was investigated by measuring contact angle of various probe liquids on the films. The properties measured were initial contact angle of water, dynamic change of the water contact angle with time, and the critical surface energy of the films. Water contact angle of the biopolyester films ($57.62-68.76^{\circ}$) was lower than that of LDPE film ($85.19^{\circ}$) indicating biopolyester films are less hydrophobic. The result of dynamic change of water contact angle also showed that the biopolyester films are less water resistant than LDPE film, but much more water resistant than cellulose-based packaging materials. Apparent critical surface energy for the biopolyester films (35.15-38.55 mN/m) was higher than that of LDPE film (28.59 mN/m) indicating LDPE film is more hydrophobic.

• 한국전기전자재료학회논문지
• /
• 제36권6호
• /
• pp.588-593
• /
• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국재료학회지
• /
• 제17권11호
• /
• pp.574-579
• /
• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• 한국표면공학회지
• /
• 제23권1호
• /
• pp.34-43
• /
• 1990

Al-Si piston alloys such as AlS10CuMg have been anodized to examine apossibility of forming a hard film aat relatively higher temperatures compard with those in conventional sulfuric acid processes. Three types of electrolytes have been employed in this study ; electrolyte A(15% H2SO4, $0^{\circ}C$), electrolyte B(12% H2SO4, 1% oxalic, $10^{\circ}C$), electrolyte C(tartaric acid 125g/L+oxalic 75g/L+aluminum sulfate 225g/L, $25^{\circ}C$). Hard anodisine process in electrolyte B at a current density of 1.54A/dm2 produced a harder film of VHN 396 at a relatibely low film forming voltage compared with those obtained in other electrolyte at equivalent current density. A liner relationship between hardness and abrasion resistance exists for Al-Si piston alloys. The hardness of anodized film decreasees with increasing silicon content in Al-Si alloys and also with bath temperature. The film hardeness of Na-modified alloy os higher than that of P-modified alloy due to its finer microstructre. The film on the silicon phase in Al-Si alloys is observed to be formed by lateral growth of oxide film nucleated at surroundings.