• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.99-102
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• 1995

When the low magnetic field is applied to the synunetry axis of the axial synunetric electric field gradient tensor of the quadrupolar nucleus in the crystal with nuclear spin, I=1, two split resonance frequencies are observed by the Zeeman effect on the nuclear quadrupole resonance. The applied magnetic field is proportional to the difference of the two resonance frequencies and this proportionality constant for the $^{14}N$ of ${(CH_{2})}_{6}N_{4}$ single crystal is 0.16 mT/kHz. The NQR spectrometer is interfaced with a personal computer from which the resonance signals are displayed and the value of magnetic field is obtained directly from the difference of the two resonance frequeocies. The lowestest measured magnetic field was 0.20 mT using this NQR technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1054-1057
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• 2003

We have studied $90^{\circ}$ twisted nematic (TN) mode driven by fringe electric field, where two polarizers are parallel each other such that the cell shows a black state before a voltage is applied. According to the studies by computer simulation for a LC with negative dielectric anisotropy, the LC twists perpendicular to the horizontal field direction of fringe electric field and the degree of tilt angle is very low, when a voltage is applied. Therefore, the new device exhibits wide viewing angle characteristic due to in-plane switching and high transmittance since the LC director aligns parallel to the polarizer axis.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.145-148
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• 1998

Fluoride({{{{ { CaF}_{2 } }}}}) films exhibited a cubic structure with similar lattice constant to that of Si and have sufficient breakdown electric field as gate dielectric material. Therefore, {{{{ { CaF}_{2 } }}}} are expected to replace conventional insulator such {{{{ { SiO}_{ 2},{Ta}_{2}{O}_{ 2} and{Al}_{2}{O}_{5}. However, {CaF}_{2}}}}} films showed hystereisis properties due to mobile charges in the film. To solve this problem we performed thermal treatment and achieves field. C-v results indicate a reduced hystereisis window of {{{{ }}}}ΔV =0.2v, LOW INTERFACE STATE {{{{{D}_{it}=2.0 TIMES {10}^{11}{cm}^{-1}{eV}^{-1}}}}} in midgap, and good WIS diode properties. We observed a preferential crystallization of(200) plane from XRD analysis. RTA treatment effects on various material properties of {{{{{CaF}_{2}}}}} are presented in this paper.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1879-1886
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• 2001

n a enclosed square cavity occurred B nard convection, the flow phenomena in the surrounding of the bubble attached at the upper cooled solid wall were studied by using a thermo-sensitive liquid-crystal tracer and image processing techniques. This method offers the advantage of measuring the entire flow field in a selected plane within the fluid at a given instant of time in contrast to point by point method like T/C. Quantitative data of the temperature were obtained by applying a colour-image-processing to the visualized image. As the flowing in a bubble, In a bubble size appears the flow phenomena which the direction of flow is reversed in the entire temperature and flow field. The observed phenomena are described with regard to the thermocapillary convection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.972-975
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• 2003

We have performed computer simulation to obtain electro-optic characteristics of reflective hybrid aligned nematic liquid crystal displays driven by fringe field. The results show that the optimal retardation value of the cell is $0.289{\mu}m$, which allows for the cell to have a practical cell gap of larger than $3{\mu}m$ when manufacturing. A reflectance of the dark state is only 0.114% for an incident light 550nm. At this condition, the light efficiency of white state reaches 92.7%. Further, we have studied a new reflective display with polarizer, optical compensation with half plate, LC plus reflector. The display with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $120^{\circ}$ in vertical direction and $160^{\circ}$ in horizontal direction.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.10a
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• pp.83-88
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• 2003

In this study, experiments were conducted with an ultra-precision machine, developed In domestic, to find the characteristics and the most suitable cutting conditions of ultra-precision machining. To maximize the performance of the machine, the machine was installed in a room that is protected from vibration and is maintained constant temperature and constant humidity. Selected work pieces are an aluminum-alloyed material, which has excellent corrosion resistance and has low deformation. The used tool is synthetic poly crystal diamond which has excellent abrasion resistance and has low affinity. Four types of tool nose radius were used such as 0, 0.1, 0.2 and 0.4mm. Machining is performed with cutting speed of 500, 800 and 1000m/min., feed rate of 0.005, 0.008, 0.010mm/rev. and cutting depth of 0.0005, 0.0025 and 0.005mm respectively which can generally be used in the field as a cutting condition. As a method of evaluation surface roughness was measured for each cutting condition and reciprocal characteristics are computed for each tool nose radius, cutting speed, feed rate and cutting depth. As a result the most suitable cutting condition and characteristics of ultra-precision machining were identified which can usefully be applied in the industrial field.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.1
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• pp.9-15
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• 2004

In this study, experiments were conducted with an ultra-precision machine, developed in domestic, to find the characteristics and the most suitable cutting conditions of ultra-precision machining. To maximize the performance of the machine, the machine was installed in a room that is protected from vibration and is maintained constant temperature and constant humidity. Selected work pieces are an aluminum-alloyed material, which has excellent corrosion resistance and has low deformation. The used tool is synthetic poly crystal diamond, which has excellent abrasion resistance and has low affinity. Four types of tool nose radius were used such as 0, 0.1, 0.2 and 0.4mm. Machining is performed with cutting speed of 500, 800 and 1000m/min., feed rate of 0.005, 0.008, 0.010mm/rev. and cutting depth of 0.0005, 0.0025 and 0.005mm respectively which can generally be used in the field as a cutting condition. As a method of evaluation, surface roughness was measured for each cutting condition, and reciprocal characteristics are computed for each tool nose radius, cutting speed, feed rate and cutting depth. As a result, the most suitable cutting condition and characteristics of ultra-precision machining were identified which can usefully be applied in the industrial field.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.487-493
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• 1997

Ti/sic(4H) Schottky barrier diodes were fabricated. The donor concentration and the built-in potential obtained by capacitance-voltage(C-V) measurement was about $2.0{\times}10^{15}{\textrm}{cm}^{-3}$ and 0.65 V, respectively. The ideality factor of 1.07 was obtained from the slope of current-voltage(I-V) characteristics at low current density. The breakdown field under the reverse bias voltage was about $1.7{\times}10^3V/{\textrm}{cm}$ and was very high. The barrier height of Ti for SiC(4H) was 0.91 V, which was determined by the analysis of the saturation current-temperature and the C-V characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.169-172
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• 1998

A phyaical model of the Czochralski method for silicon single crystals is designed to measure the change of velocities and temperature profilles in the melt. Wood's metal(Bi 50%, Pb 26.7%, Sn 13.3%, Cd 10%, m.p. 70℃) is used to simulate the silicon melt in the crucible. To measure the local velocity change, electromagnetic probe is adopted as a velocity sensor. The output voltage of the sensor shows linear relationship to the velocity of the melt.