• 한국콘텐츠학회논문지
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• 제15권6호
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• pp.283-289
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• 2015

현재 방사선치료는 치료효과를 높이기 위해 고에너지 광자선의 사용이 증가하고 있는 추세이다. 일반적으로 6~8 MeV 이상의 고에너지 광자선을 사용하는 경우에는, 광핵반응에 의한 광중성자가 발생됨으로써 방사선 방호의 측면에서 많은 문제를 야기 시킬 수 있다. 이에 본 연구는 MCNPX를 이용하여 방사선 치료실의 광중성자 선량분포를 분석하였다. 그 결과 10 MV와 12 MV 구간에서 급격한 흡수선량의 증가를 보였다. 이를 통해 10 MV를 시작으로 광중성자 플루언스의 급격한 증가가 흡수선량으로 연계됨을 알 수 있었다. 또한 산출된 흡수선량을 바탕으로 등가선량을 환산한 결과는 ICRP 103 권고안의 경우, 낮은 에너지 범위에서 인체의 흡수선량에 대한 2차 광자의 기여를 반영함으로써 ICRP 60 권고안에 비해 낮은 등가선량을 나타냈다.

• Journal of Radiation Protection and Research
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• 제21권2호
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• pp.125-129
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• 1996

저에너지 광자에 대한 고순도 게르마늄 검출기의 에너지 반응데이타를, 3개의 몬테칼로 코드 (MCNP4A, EGS4. ITS3의 CYLTRAN)를 사용하여 계산하였다. 본 연구에서는, beam고순도 게르마늄 검출기$(100 mm^2{\times}10mm)$가 사용되었고. 측정기표면의 중앙에 pencil beam을 수직으로 입사시켰다. 광전효과 효율. $K_{\alpha}$ 및 $K_{\beta}$ 이탈률을, 12keV부터 60 keV 범위까지 2 keV 간격으로 입사된 X-선 에너지의 함수로 나타내었다. 이 에너지범위에서 컴프턴산란률, 탄성산란률 및 투과율은 매우 작기 때문에 본 계산에서는 제외되었다. 비록 MCNP EGS및 CYLTRAN코드의 저에너지 광자에 대한 고순도 게르마늄 검출기 에너지 반응데이터 값은 약간의 차이를 나타내지만. 세 가지 몬테칼로 코드는 검출기내의 저에너지 광자산란을 정확히 예측하고 있음을 알 수 있다. 또한. EGS나 ITS의 결과에 비해 저에너지 영역에서 정확성이 떨어진다고 여겨지는 MCNP의 결과도 EGS나 ITS의 결과에 상당하는 정확성을 보여주고 있으며, 저에너지 광자에 대한 검출기 반응데이타 계산에 응용될 수 있다

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Nuclear Engineering and Technology
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• 제41권5호
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• pp.723-728
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• 2009

The response property of the CZT detector ($5{\times}5{\times}5\;mm^3$), widely used in photon spectroscopy, was evaluated by considering the charge collection efficiency, which depends on the interaction position of incident radiation, A quantitative analysis of the energy spectra obtained from the CZT detector was also performed to investigate the tail effect at the low energy side of the full energy peak. The collection efficiency of electrons and holes to the two electrodes (i.e., cathode and anode) was calculated from the Hecht equation, and radiation transport analysis was performed by two Monte Carlo codes, Geant4 and MCNPX. The radiation source was assumed to be 59.5 keV gamma rays emitted from a $^{241}Am$ source into the cathode surface of this detector, and the detector was assumed to be biased to 500 V between the two electrodes. Through the comparison of the results between the Geant4 calculation considering the charge collection efficiency and the ideal case from MCNPX, an pronounced difference of 4 keV was found in the full energy peak position. The tail effect at the low energy side of the full energy peak was confirmed to be caused by the collection efficiency of electrons and holes. In more detail, it was shown that the tail height caused by the charge collection efficiency went up to 1000 times the pulse height in the same energy bin at the calculation without considering the charge collection efficiency. It is, therefore, apparent that research considering the charge collection efficiency is necessary in order to properly analyze the characteristics of CZT detectors.

• 한국환경과학회지
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• 제30권11호
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• pp.907-914
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• 2021

In this study, strawberry cultivation environment in a greenhouse located in Jeonju was monitored and internal environmental parameters were analyzed. Temperature, humidity, RAD, and PPF sensors were installed to monitor environmental conditions in the test greenhouse. Data were collected every 10 minutes during four winter months from sensors placed across the greenhouse to assess its permeability and environmental uniformity. Temperature and humidity inside the greenhouse were relatively uniform with negligible deviations among the center, south, and north; however, it was judged that further analysis of gradients of these parameters from the east to the west of the greenhouse would be needed. Both RAD (Total solar radiation) and PPF (Photosynthetic photon flux) had high values on the south and were low on the north and the reduction rate of these parameters was 54% and 61%, respectively, indicating that a significant amount of light could not be transmitted. This implied a significant decrease in the amount of light entering the greenhouse during winter. Therefore, it is concluded that environmental control devices and auxiliary lighting are needed to achieve uniform greenhouse environment for efficient strawberry cultivation.

• 천문학회지
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• 제27권1호
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• pp.45-53
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• 1994

We present the calculation of X -ray spectra produced through Compton scattering of soft X-rays by hot electrons in the spherical shell geometry, using fully relativistic Monte Carlo simulation. With this model, we show that the power-law component, which has been observed in the low luminosity state of low-mass X-ray binaries (LMXBs), is explained physically. From a spectral. analysis, we find that spectral hardness is mainly due to the relative contribution of scattered component. In addition, we see that Wi en spectral features appear when the plasma is optically thick, especially in the high energy range, $E{\gtrsim}100keV$. We suggest that after a number of scattering the escape probability approaches an asymptotic form depending on the geometry of the scattering medium rather than on the initial photon spectrum.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.129-135
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• 1995

SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.

• E2M - 전기 전자와 첨단 소재
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• 제10권6호
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• pp.570-575
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• 1997

In this days, the thinner film of dielectric materials is required while its capacitance is required to be still large at the VLSI process. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method. SiO of the SiO/TiN film is used as the insulating layer and TiN is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of its relatively low specific resistance. In this study their electrical and optical characteristics are investigated to find refractive index, absorption coefficient and Permittivity.

• Journal of Radiation Protection and Research
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• 제49권1호
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• pp.29-39
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• 2024

Background: The gamma emission tomography (GET) device has been reported a reliable technique to inspect partial defects within spent nuclear fuel (SNF) of pin-by-pin level. However, the existing GET devices have low accuracy owing to the high attenuation and scatter probability for SNF inspection condition. The purpose of this study is to design and optimize a Yonsei single-photon emission computed tomography version 2 (YSECT.v.2) for fast inspection of SNF in water storage by acquisition of high-quality tomographic images. Materials and Methods: Using Geant4 (Geant4 Collaboration) and DETECT-2000 (Glenn F. Knoll et al.) Monte Carlo simulation, the geometrical structure of the proposed device was determined and its performance was evaluated for the ¹³⁷Cs source in water. In a Geant4-based assessment, proposed device was compared with the International Atomic Energy Agency (IAEA)-authenticated device for the quality of tomographic images obtained for 12 fuel sources in a 14 × 14 Westinghouse-type fuel assembly. Results and Discussion: According to the results, the length, slit width, and septal width of the collimator were determined to be 65, 2.1, and 1.5 mm, respectively, and the material and length of the trapezoidal-shaped scintillator were determined to be gadolinium aluminum gallium garnet and 45 mm, respectively. Based on the results of performance comparison between the YSECT.v.2 and IAEA's device, the proposed device showed 200 times higher performance in gamma-detection sensitivity and similar source discrimination probability. Conclusion: In this study, we optimally designed the GET device for improving the SNF inspection accuracy and evaluated its performance. Our results show that the YSECT.v.2 device could be employed for SNF inspection.

• Progress in Superconductivity
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• 제9권2호
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• pp.162-166
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• 2008

We are developing a sensitive gamma ray spectrometer based on superconducting transition edge sensors. The detector consists of a small piece of high purity Sn as an absorber and a Ti/Au bilayer as a temperature sensor. It is designed to measure the thermal signal caused by absorption of gamma rays. The mechanical support and the thermal contact between the absorber and the thermometer were made with Stycast epoxy. The bilayer was formed by e-beam evaporation and patterned by wet etching on top of a $SiN_X$ membrane. A sharp superconducting transition of the film was measured near 100 mK. When the film was biased to the edge of the transition, signals were observed due to single photon absorption emitted from an $^{241}Am$ source. The measured spectrum showed several characteristic peaks of the source including 59.5 keV gamma line. The full with at half maximum was about 900 eV for the 59.5 keV gamma line. The background was low enough to resolve low energy lines. Considerations to improve the energy resolution of the gamma ray spectrometer are also discussed.