• Transactions of the Korean hydrogen and new energy society
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• v.24 no.2
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• pp.107-112
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• 2013

The ZnO is able to produce hydrogen from water however it can only absorb ultraviolet region due to its 3.37eV of wide band gap. Therefore efficiency of solar hydrogen production is low. In this work we report investigation results of improved visible light photo-catalytic properties of CdSe quantum dots(QDs) sensitized ZnO nanorod heterostructures. Hydrothermally vertically grown ZnO nanorod arrays on FTO glass were sensitized with CdSe by using SILAR(successive ionic layer adsorption and reaction) method. Morphology of grown ZnO and CdSe sensitized ZnO nanorods had been investigated by FE-SEM that shows length of $2.0{\mu}m$, diameter of 120~150nm nanorod respectively. Photocatalytic measurements revealed that heterostructured samples show improved photocurrent density under the visible light illumination. Improved visible light performance of the heterostructures is resulting from narrow band gap of the CdSe and its favorable conduction band positions relative to potentials of ZnO band and water redox reaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.32-41
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• 1994

In this study, the TSC spectroscopy has been applied to investigate the influence of structural change due to a process of curing reaction on the electrical properties of epoxy composites cured with acid-anhydride. Five TSC peaks appeared in -160-250[.deg.C]: in the low temperature region below glass transition temperature(T$\_$g/), three relaxation mode peaks due to action of side chains, substitution group or terminal groups have been observed, a peak associated with T$\_$g/, appeared in 110[.deg. C] and p peak due to ionic space charges located in 150[.deg.C]. Each peak was separated into elementary peaks by the partial polarization procedure, and the distribution of activation energy and relaxation time were analized to clearify the origin of each peak. Also, overaboundantly added hardener separated a .betha. peak near 10[.deg. C] into two peaks of .betha.$\_$1/(10.deg. C) and .betha.$\_$2/(20.deg. C) according to increasement of forming field, and the separated hardener was oxidated thermally with increasing surrounding temperatures. The expansion of the free volume need in molecular motion and the reduction of the structural packing density through thermal oxidation process increased TSC between .alpha. peak and .betha. peak and decreased T$\_$g/.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.187-199
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• 1994

In order to find an effect of structural changes due to variation of addition ratio of anhydride hardener and postcuring herat-treatments upon electrical properties of epoxy composites, the dielectric properties over a frequency range from 30[Hz] to l[MHz] were investigated in the temperature range of 20-180[.deg. C]. From the dielectric properties, the a peaks related with glass-transition phenomena of epoxy network appeared near 130[.deg. C], the conduction loss in high temperature region above 150[.deg. C] due to thermal dissociation of hardener started off with the low frequency side and the .betha. peak concerned with contribution of movable unreacted terminal epoxy groups and curing agents in the glass states concurred with the high-frequency side below 20[.deg. C]. And an effect of an hydride hardener upon structural changes and of postcuring heat treatments upon structural stability in epoxy composites would be explained through the estimation of the distribution of relaxation times and the activation energy for a .alpha. peak according to the WLF equations.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.450-457
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• 2021

From measured thermal conductivity and modeling by simulation, this study suggests that U-factors are highly related to materials used between steel and polymer. The objective and prospective point of this study are to relate the relationship between the U-factor and the thermal conductivity of the materials used. For the characterization, EDX, SEM, a thermal conductive meter, and computer simulation utility are used to analyze the elemental, surface structural properties, and U-factor with a simulation of the used material between steel and polymer. This study set out to divide the curtain wall system that makes up the envelope into an aluminum frame section and entrance frame section and interpret their thermal performance with U-factors. Based on the U-factor thermal analysis results, the target curtain wall system is divided into fix and vent types. The glass is 24 mm double glazing (6 mm common glass +12 mm Argon +6 mm Low E). The same U-factor of 1.45 W/m²·K is applied. The interpretation results show that the U-factor and total U-value of the aluminum frame section are 1.449 and 2.343 W/m²·K, respectively. Meanwhile, those of the entrance frame section are 1.449 and 2.

• KIEAE Journal
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• v.16 no.2
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• pp.23-31
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• 2016

Purpose: Recently energy consumption is rapidly increasing due to continuous development of social evolution in various field. In this situation, there is a lot of effort to reduce this energy consumption in many ways, especially in building energy. Preceding studies already started to analyze the housing area such as zero energy house and passive house by researching annual building energy consumption, but to apply the results of housing to office building is insufficient since it has different consumption tendency. Method: In this study, eQuest program was used for simulation and the base model is selected among standard office building in ASHRAE 90.1. Variables are divided into passive and active factors for comparison. Result: In passive factors, glazing system showed the highest energy saving rate by 21.3% with triple low-e glass and enhancing wall u-value showed the lowest energy saving rate by 3.6% with 0.15 m2/K. In active factors, VAV system showed 30.9% energy saving rate when compared to CAV system, and heat exchanger showed 10.2% energy saving rate. For regeneration energy part, photovoltaic panel generated 10.4% of base annual energy usage.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

• The Journal of the Korean Society for Microbiology
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• v.17 no.1
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• pp.75-85
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• 1982

In order to demonstrate the effect of specific serum IgG antibody on the adherence of Streptococcus mutans to smooth surface and the mechanism of effective adherence inhibition by IgG antibody, in the present study authors obtained purified IgG from different immunogen preparations of S. mutans NCTC 10449(serotype c) and observed the effect of each IgG preparation on the adherence of each S. mutans strain cultured in different conditions. In addition, the present study was undertaken to observe the cross-reactivity of IgG and the effect of sucrose concentration on the adherence of S. mutans in vitro non-growth condition. The adherence of S. mutans to glass surface was effectively inhibited by serum IgG antibody. At the same IgG concentrations, anti-2% fructose grown/1N NaCl washed S. mutans NCTC 10449 cell showed greater adherence inhibitory effect to S. mutans strains than anti-2% sucrose grown and anti-S. mutans NCTC 10449 cell wall, and the greater inhibitory effects of IgG preparations were observed in assay using 2% fructose grown S. mutans cell preparations than using 0.1% sucrose grown cell preparations. These results suggest that the more effective adherence inhibition by serum IgG antibody is due to the reaction with S. mutans cell surface antigens rather than glucan and cell-associated glucosyltransferase. The greatest adherence inhibitory effect of IgG to S. mutans strains was observed on homologous NCTC 10449 strain and the inhibition cross-reactivities were observed between serotype c, e, and f strains. More pronounced cross-reactivity of adherence inhibition of IgG to S. mutans was observed in assay using anti-2% fructose grown/1N NaCl washed cell than using other IgG preparations, and observed in assay using 2% fructose grown S. mutans cell preparations than 0.1% sucrose grown cell preparations. It was interested that low, but adequate concentration of reactive IgG antibody significantly increased the adherence ability of S. mutans. This result may be due to the formation of small cell aggregates resulted in a increase in the numbers of organisms which adhered to glass surface. The adherence of S. mutans to glass surface was possible in the absence of glucan-synthetic activity. Low level of sucrose significantly increased the adherence ability of S. mutans to glass surface, but excessive amount of sucrose induced large cell aggregates resulted in a decrease in the numbers of organism which adhered.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.499-502
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• 2008

In this work, Ga-doped ZnO (GZO) thin films for gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin film with thickness of 50 nm is analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The film shows good adhesion to the substrate. The GZO gas sensors are tested by gas measurement system and show fast response and recovery characteristics to $NO_x$ gas that is 27.2 and 27.9 sec, recpectively.