• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.100-106
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• 1994

A bilayer film consisting of a layer of a-Se$_{75}$ Ge$_{25}$ with a surface layer of silver -100[.angs.] thick and a monolayer film of a-Se$_{75}$ Ge$_{25}$ are irradiated with 9[keV] Ga$^{+}$ ion beam. The Ga$^{+}$ ion (10$^{16}$ [ions/cm$^{2}$] exposed a-Se$_{75}$ Ge$_{25}$ and Ag/a-Se$_{75}$ Ge$_{25}$ thin films show an increase in optical absorption, and the absorption edge on irradiation with shifts toward longer wavelength. The shift toward longer wavelength called a "darkening effect" is observed also in film exposure to optical radiation(4.5*10$^{20}$ [photons/cm$^{2}$]). The 0.3[eV] edge shift for ion irradiation films is about twice to that obtained on irradiation with photons. These large changes are primarily due to structural changes, which lead to high etch selectivity and high sensitivity.

• 한국표면공학회지
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• 제46권1호
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• pp.16-21
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• 2013

CIGS (Cu-In-Ga-Se) films were deposited on the Mo coated soda lime glass (Mo/SLG) by RF magnetron sputtering using a single sintered target with different chemical compositions. Heat treatment of the CIGS films were carried out under three different conditions, 1step ($350^{\circ}C$ for 2 hour and $550^{\circ}C$ for 2 hour) and 2step ($350^{\circ}C$ for 1 hour and $550^{\circ}C$ for 1 hour). In the case of CIGS films post-annealed on 2step method, grain size remarkably increased compared to other methods, indicating that chemical composition [Cu/(Ga+In) = 1] of CIGS films was same as CIGS target. After heat treatment by 2step method, band gap energy of the CIGS film deposited at RF 80 W showed 1.4 eV which is broadly similar to identical band gap energy (1.2 eV) of CIGS film prepared by evaporation method. Therefore, 2step heat treatment method could be expected to low temperature process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• Applied Biological Chemistry
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• 제35권4호
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• pp.294-299
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• 1992

$TiO_2$를 이용한 광살균 효과를 규명하기 위하여 Echerichia coli, Bacillus subtilis 및 Saccharomyces cerevisiae의 광살균에 적합한 $TiO_2$의 함량, $TiO_2$ 촉매에 효과적인 광살균 조사시간, 균종간 및 미생물농도 등에 대한 영향을 검토하였다. E. coli 광살균에서의 $TiO_2$ 촉매 적정함량은 $10{\sim}20mg$ 범위일 때 광살균 효과가 높았으며, 광파장의 영향은 400nm 이하 파장을 차단한 것보다 차단하지 않았을 때가 살균시간을 단축하였지만 $TiO_2$ 촉매 효과는 처리나 무처리에서 모두 유사하였다. 균종별 광살균 효과는 $TiO_2$의 첨가에 의한 촉매 효과가 인정되었으며 그 순위는 S. cerevisiae, E. coli, B. subtilis의 순이었다. 효모의 농도에 따른 광살균 효과는 $10^5$의 농도에서 보다 $10^4$의 농도에서 광살균 시간을 단축하였다.

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• 한국추진공학회지
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• 제8권1호
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• pp.70-80
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• 2004

본 연구에서는 한국과 같이 비교적 저 풍속인 지역에 적용 가능하도록 피치제어장치를 가진 1kW급 소형 풍력발전 시스템의 개발 결과를 제시하였다. 공력설계에서는 블레이드의 직경이 동급의 상용 블레이드 보다 과도하게 크지 않으면서도 저 풍속 지역에서 보다 효율적인 형상설계를 위해 여러 가지 설계 변수분석을 통한 파라미터 연구가 수행되었다. 또한 구조설계를 통해 풍력발전기에 작용하는 다양한 하중을 효과적으로 견딜 수 있는 경량의 복합재 구조가 설계되었다. 구조설계의 평가를 위해 유한요소 구조해석이 수행되었으며, 실물 구조시험을 수행하여 구조적 안전성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3311-3316
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• 2011

New poly(arylene ether)s (PAEs) with both transparency and heat-resistance were prepared by a polycondensation of FBPODS, an ordered-sequence aromatic dihalide, and cardo typed aromatic diols containing fluorene and/or adamantane moiety and also non-cardo typed 1,5-naphthalene diol. The resulting polymers had their glass transition temperatures ranged from 202 to $247^{\circ}C$. Based on TGA data, they exhibited excellent thermal stabilities, showing 5% weight loss at $434-487^{\circ}C$. They had low thermal expansion coefficients of 58-59 ppm at temperature range of $50-200^{\circ}C$ as well as good mechanical properties with moduli of 1757-2143 MPa. The optical transmittance for the PAE films was over 70% at 550 nm, except for the PAE that contains naphthalene moiety (30% at 550 nm). They also showed water uptake of about 0.68% regardless of their chemical compositions. Therefore, the newly developed PAEs show strong potential as plastic substrates for flexible devices for display, solar cell and e-paper.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.145-146
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• 2000

Primary emphasis was placed on the electrophoretic deposition of low voltage phosphor to indium-tin oxide-coated glass for the application of field emission display. The phosphor deposited by various parameters, such as deposition time and applied voltages was examined in detail. In addition, a comparison was made by analyzing luminance properties of the phosphor mixed with and without conducting $In_2O_3$ powder of less than 1um size. The measurement was performed as a function of $In_2O_3$ concentration from 3% to 15% by weight. The enhanced impact of indium powder mixing on the phosphor was clearly demonstrated by aging performance curve at 1000V excitation voltages with a current density of $1\;mA/cm^2$

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.847-851
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• 2011

This study examined In-Zn-Sn-O (IZTO) films deposited on glass substrates by pulsed DC magnetron sputtering with various substrate temperatures. The structural, electrical, optical properties were analyzed. Xray diffraction showed that the IZTO films prepared at temperatures > $150^{\circ}C$ were crystalline which adversely affected the electrical properties. Amorphous IZTO films prepared at $100^{\circ}C$ showed the best properties, such as a low resistivity, high transmittance, figure of merit, and high work function of $4.07{\times}10^{-4}\;{\Omega}$, 85%, $10.57{\times}10^{-3}\;{\Omega}^{-1}$, and 5.37 eV, respectively. This suggests that amorphous IZTO films deposited at relatively low substrate temperatures ($100^{\circ}C$) are suitable for electrode applications, such as OLEDs as a substitute for conventional crystallized ITO films.