• Electrical & Electronic Materials
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• v.9 no.1
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• Journal of Periodontal and Implant Science
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• v.53 no.1
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• pp.85-95
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• 2023

Purpose: In recent years, guided implant surgery has been widely used for the convenience of patients and surgeons. Further streamlining the surgical procedure would make implant surgery more convenient. Low-speed water-free conditions are often used in guided implant surgery. Therefore, in this study, we attempted to confirm once again whether drilling was safe at a low speed without water. The main purpose of this study was to evaluate whether a simplified drilling protocol that omits some intermediate steps in the drilling process was safe from the viewpoint of heat generation. Methods: D1 density artificial bone blocks were drilled under 50 rpm, 10 N·cm water-free conditions, and the surface temperature was measured using a digital infrared camera. First, drilling was performed with the sequential drilling method, which is the most widely used technique. Second, for each drill diameter, the temperature change was measured while performing simplified drilling with omission of the previous 1, 2, or 3 steps. Results: In sequential drilling, the heat generated during drilling at all diameters was less than the critical temperature of osteonecrosis (47℃) except for the ⌀2 drill. Statistical significance was observed in all groups when comparing sequential and simplified drilling in the ⌀3.2, ⌀3.8, and ⌀4.3 drills (P<0.001). However, in the simplified drilling procedures, the temperature was below the osteonecrosis threshold temperature (47℃) except for the ⌀4.3 drill with the omission of the previous 3 steps (⌀3.0, ⌀3.2, and ⌀3.8). Conclusions: In general, drilling under low-speed, water-free conditions has shown stable results in terms of heat generation. Simplified drilling showed statistically significantly greater heat generation than sequential drilling. However, most of the diameters and omitted steps seem to be clinically acceptable, so it will be useful if an appropriate selection is made according to the patient's clinical condition.

• Korean Journal of Metals and Materials
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• v.48 no.9
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• pp.856-860
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• 2010

Silver nanoparticles were formed on silica substrates through thin film dewetting at high temperature. The microstructural and morphological evolution of the particles were characterized as a function of processing variables such as initial film thickness, annealing time, and temperature. Silver thin films were deposited onto the silica using a pulsed laser deposition system and annealed in reducing atmosphere to induce agglomeration of the films. The film thicknesses before dewetting were in the range of 5 to 25 nm. A noticeable agglomeration occurs with annealing at temperatures higher than $300^{\circ}C$, and higher annealing temperature increases particle size uniformity for the same film thickness sample. Average particle size linearly correlates to the film thickness, but it does not strongly depend on annealing temperature and time, although threshold temperature for complete dewetting increases with an increase of film thickness. Lower annealing temperature develops faceted surface morphology of the silver particles by enhancing the growth of the low index crystal plane of the particles.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.

• Journal of Environmental Health Sciences
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• v.39 no.1
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• pp.90-98
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• 2013

Objectives: Many studies have shown that air pollution and temperature have adverse effects on mortality and morbidity. But the interactive effect between air pollution and temperature on mortality has been rarely investigated. This study aims to explore whether temperature modifies the associations between ambient particulate matter less than $10{\mu}m$ in diameter ($PM_{10}$) and mortality in Seoul, Korea. Methods: The time-series analysis examined the effect of the interaction between $PM_{10}$ and temperature on mortality from 1999 to 2010 in Seoul. In order to examine the interactive effect between $PM_{10}$ and temperature on mortality, we fitted a response surface model controlling the time-trends and meteorological variables. The effects of $PM_{10}$ were stratified by temperature stratum to quantitatively estimate the $PM_{10}$-health outcome associations. Results: When temperature was low (below the threshold temperature), the percentage increases per $10{\mu}g/m^3$ increase of $PM_{10}$ increased 0.38% (95% Confidence Interval[CI]: 0.09~0.68%) and 0.31% (95% CI: - 0.07~0.68%) of mortality in the all age group and ${\geq}65$ year age group, respectively. When temperature was high (above the threshold temperature), the percentage increases per $10{\mu}g/m^3$ increase of $PM_{10}$ increased 1.09% (95% CI: 0.47~1.72%) and 1.35% (95% CI: 0.65~2.06%) for mortality in the all age group and ${\geq}65$ year age group, respectively. Conclusion: The results of this study showed strong modification by temperature in the association between $PM_{10}$ and mortality. We recommend that public health strategies to minimize adverse health impact of heat and $PM_{10}$ should be considered in control and prevention measures for air pollution and weather-related health impacts.

• Journal of Information Display
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• v.7 no.1
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• pp.25-29
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• 2006

By the voltage threshold (Vt) close-curve measurement method, the changes in the discharge characteristics such as a firing voltage and IR emission among the three electrodes were examined relative to the low or high panel temperature ranging from -10 to $80^{\circ}$. The variation in the panel temperature was found significantly influence the surface discharge between the MgO surfaces rather than the plate gap discharge between the MgO and phosphor layers. Based on this experimental observation, a modified reset waveform that alleviates the surface discharge during a ramp-up and -down period was deeloped. By adopting the proposed reset waveform, a stable address discharge could be obtained irrespective of the panel temperature variation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.262-263
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• 2011

Flexible electronics, a future technology of electronics, require a low cost integrated circuit that can be built on various types of the flexible substrates. As a potential candidate for this application, a single walled carbon nanotube network is studied as an active device with a scheme of thin film transistor. Transistors are formed on a plastic foil by the Roll-to-Roll (R2R) and the Roll-to-Device (R2D) printing method. For both printing methods, electrical transports for the transistors are presented with the temperature dependence of threshold voltage (V_Th) and mobility from the measured transfer curves at temperatures ranging from 10 K to 300 K. It is observed that ${\mu}=0.044cm^2/V{\cdot}sec$ and V_Th=7.28V for R2R and ${\mu}=0.025cm^2/V{\cdot}sec$ and V_Th=3.10V for R2D, both for the temperature at 300K. Temperature dependence of mobility and V_Th is observed. However for R2R, the temperature dependence of V_Th is constant. It is the difference between, R2R and R2D.

• Journal of Advanced Marine Engineering and Technology
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• v.29 no.4
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• pp.426-435
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• 2005

The lightness of components required in automobile and machinery industries is requiring high strength of components. Therefore this requirement is accomplished as the process of shot-peening method that the compressive residual stress is made on the metal surface as one of various improvement methods. Special research is, therefore, needed about compressive residual stress on the metal surface in the process of shot-peening method. Therefore, in this paper the effect of compressive residual stress of spring steel(JISG SUP-9) by shot-peening on fatigue crack growth characteristics in environmental condition(temperature) and mechanical condition(shot velocity, stress ratio) was investigated with considering fracture mechanics. By using the methods mentioned above, the following conclusions have been drawn. (1) The fatigue crack growth rate(da/dN) of the shot-peened material was lower than that of the un-peened one. In high temperature range. fatigue crack growth rate decreased with increasing temperature range, while fatigue crack growth rate increased by decreasing temperature in low temperature. (2) Fatigue life shows more improvement in the shot-peened material than in the un-peened material. And compressive residual stress of surface on the shot-peen processed operate resistance force of fatigue crack propagation.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.168-171
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• 2000

VO$_2$ceramics exhibiting a negative temperature coefficient (NTC) of resistivity have been widely used as temperature dependence resistors. The NTC effect similar to $VO_2$ceramics was observed when a low-thermal-expansion ceramic matrix was loaded near the percolation threshold with conductive metal particles. The resistivity in a composite made from silica glass and 20 vol% Ag filler suddenly decreased from $10^{-7}$ to $10^3\;\Omega$cm at about $300^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.324-331
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• 1995

The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3$\mu$m, the best on/off current ration could be obtained with the 1.3$\mu$m LDD space. And the threshold voltage did not increase more than 4V over 0.8$\mu$m LDD space. The characteristics of leakage current was compared to non-LDD structure TFT to analyze the mechanism of leakage current. Consequently, it could be concluded that the leakage current is strongly affected by the trap states as well as high electric field between gate and drain.