• 한국표면공학회지
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• 제43권1호
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계합동학술대회 논문집
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• pp.218-223
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• 2002

Low temperature synthesis of $LaNiO_3$ crystalline phase composited from mixtures of $La_2O_3$ and NiO via the ball mill and mechanochemical process were investigated. By the ball mill, 20% of $LaNiO_3$ crystalline phase was formed in the samples sintered at $900^{\circ}C$ due to the lack of reactivity of NiO. However, the mechanochemical process yielded about 93% of $LaNiO_3$ crystalline phase in room temperature.

• 대한기계학회논문집B
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• 제34권2호
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• pp.173-178
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• 2010

빙축열시스템은 저온잠열저장을 위해 물을 사용한다. 그러나 물은 액체에서 고체로 상변화를 하는 과정에서 물의 과냉각 현상에 의하여 냉동기의 냉동용량 증가와 COP감소의 원인이 되고 있다. 본 연구는 저온잠열축열물질로 적용 가능한 TMA(Tri-methyl-amine, $(CH_3)_3N$) 20~25 wt%를 포함하고 있는 TMA-물계 포접화합물(TMA-water clathrate compound)의 냉각특성에 대한 실험적 연구를 수행하였다. 실험적 연구 결과, TMA 질량농도가 높을수록 상변화온도는 증가하였고, 과냉각도와 비열은 감소하였다. 특히, TMA 25wt%를 포함하고 있는 포접화합물은 냉각과정동안 평균 상변화온도 $5.8^{\circ}C$와 과냉각도 $8.0^{\circ}C$, 액상유지시간 651sec 및 비열 3.499 kJ/kgK로서 다른 TMA 농도보다 양호한 냉각특성을 나타내었다. 이와 같이 저온잠열축열물질로서 TMA 25wt%-물계 포접화합물을 적용하는 것이 유리할 것으로 판단된다.

• 한국수소및신에너지학회논문집
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• 제22권4호
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• pp.424-431
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• 2011

The Sulfur-Iodine(SI) thermochemical hydrogen production process consists of three sections, which are so called the Bunsen reaction section, the $H_2SO_4$ decomposition section and the HI decomposition section. In order to identify the phase separation characteristics in the reaction conditions with the high solubility of $SO_2$, we conducted the Bunsen reaction at the low temperatures, ranging from 283 to 298K, with the $I_2/H_2O$ molar ratios of 2.5/16.0 and 3.5/16.0. The molar ratios of HI/$H_2SO_4$ products obtained from low temperature Bunsen reactions were ca. 2, indicating that there were no side reactions. The amount of reacted $SO_2$ was increased with decreasing the temperature, while the amounts of unreacted $I_2$ and $H_2O$ were decreased. In the phase separation of the products, the amount of a $H_2SO_4$ impurity in $HI_x$ phase was increased with decreasing the temperature, though the temperature has little affected on HI and $I_2$ impurities in $H_2SO_4$ phase.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.906-910
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• 2008

$(K_{0.5}Na_{0.5})NbO_3$ (NKN) ceramics doped with $Li_{2}CO_3$ as sintering aids were manufactured in order to develop the low temperature sintering ceramics for piezoelectric device. The sintering aids were proved to lower the sintering temperature of doped NKN ceramics due to the effect of $Na_{2}CO_{3}-Li_{2}CO_3$ liquid phase. All the specimens showed the orthorhombic phase without secondary phase. And also, the piezoelectric properties of specimens were improved with increasing $Li_{2}CO_3$ contents. At sintering temperature of $930^{\circ}C$, the density, electromechanical coupling factor (kp), mechanical quality factor (Qm) and dielectric constant(${\epsilon}_{\gamma}$), piezoelectric constant of 0.3 wt.% $Li_{2}CO_3$ added specimen showed the optimum values of $4.255 g/cm^3$, 0.37, 234, 309, 136 pC/N, respectively.

• Advances in nano research
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• 제1권2호
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• pp.93-103
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• 2013

An ultrasonic-mediated assisted stepwise method has been developed for depositing transparent ZnO films from aqueous solution. Rinsing in low ethylene glycol temperature was easy to produce intermediate phase of $Zn(OH)_2$, rinsing in $120^{\circ}C$ ethylene glycol was observed the diffraction peak of intermediate $Zn(OH)_2$ in early report, the rinsing temperature plays an important role in the process of $Zn(OH)_2$ phase transformed to ZnO, high rinsing temperature actually improved the intermediate phase. However, the effect of rinsing on the intermediate phase is yet to be understood clearly. The effect of different rinsing procedures, involving either of or a combination of successive ionic layer adsorption and reaction (SILAR) and ultrasonic-assisted rinsing, prior to hydrolysis in ethylene glycol was found to improve the occurrence $Zn(OH)_2$ in ZnO thin films. In the zinc complex ($[Zn(NH_3)_4]^{2+}$) solution, excess ($[Zn(NH_3)_4]^{2+}$) absorbed in glass substrate transformed incompletely to ZnO and exist as $Zn(OH)_2$ phase in thin films. In films deposited at low temperature, rinsing procedure is applied to improve excess $Zn(OH)_2$ and obtain smoother transparent thin films.

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.17-24
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• 2012

Recently, flip chip interconnection has been increasingly used in microelectronic assemblies. The common Flip chip interconnection is formed by reflow of the solder bumps. Lead-Tin solders and Tin-based solders are most widely used for the solder bump materials. However, the flip chip interconnection using these solder materials cannot be applied to temperature-sensitive components since solder reflow is performed at relatively high temperature. Therefore the development of low temperature bonding technologies is required in these applications. A few bonding techniques at low temperature of $150^{\circ}C$ or below have been reported. They include the reflow soldering using low melting point solder bumps, the transient liquid phase bonding by inter-diffusion between two solders, and the bonding using low temperature curable adhesive. This paper reviews various low temperature bonding methods.

• 한국세라믹학회지
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• 제34권12호
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• pp.1235-1239
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• 1997

Sodium niobate single crystals were grown by high temperature solution growth with Na2O/B2O3 flux. The phase transitions and domain structures of sodium niobate were observed using transmission polarizing microscope from room temperature to $650^{\circ}C$. There was imperfect extinction region within as-grown crystals and this area could be removed by heat treatment. The area existed within crystal till 3$65^{\circ}C$, in which temperature the space group of sodium niobate is changed from Pbma to Pmnm. The phase transition from Pbma to Pmnm happened abruptly with changing domain structure. At 48$0^{\circ}C$, 52$0^{\circ}C$ and 572$^{\circ}C$, the colors and walls of domains were changed. All domains disappeared and the space group of sodium niobate was changed from P4/mbm to Pm3m at 64$0^{\circ}C$. When sodium niobate changed from high temperature phase to low temperature phase, the memory effect of domain structure was not observed.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.158-160
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• 2004

BiSrCaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The superconductivity was achieved at 20 K with an onset temperature of around 90 K in the film prepared at 72$0^{\circ}C$. From X ray diffraction analysis, the main superconducting phase in the films was the low Tc phase at 700∼75$0^{\circ}C$ and the high Tc phase at 750 ∼ 80$0^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.85-88
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• 2001

The NdBaCuO superconductor samples were Zone-melted in low oxygen partial pressure (1% $O_{2}+ 99% Ar$ ). The Zone-melting temperature was decreased about $120^{\circ}C$ from $1060^{\circ}C$ the zone-melting temperature in air. Thus the loss of liquid phase ($BaCuO_{2}$ and CuO) was reduced during the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased, so was the substitution of Nd for Ba. The superconductivity of zone-melted $Nd_{1+x}Ba_{2-x}Cu_{3}O_{y}$ prepared under low oxygen partial pressure was distinctively improved.