• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.58-58
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• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Fire Science and Engineering
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• v.16 no.3
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• pp.26-31
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• 2002

Bromotrifluoromethane(halon-1301) and bromochlorodifluoromethane(halon-1211) have been widely used as a clean fire extinguishing agents due to their outstanding properties. However, production and use of halon are currently being phased out under an international agreements Montreal Protocol because of global environmental concerns and HFCs have been considered as promising alter-natives for the replacement of halon since their ozone depletion potentials are low. The vapor-liquid equilibrium data are required as important basic information in evaluating the solubility of clean fire extinguishing agents and determining their optimal compositions. In this work, we chose HFCs such as HFC-22 HFC-125, and HFC-l34a for gaseous fire extinguishing agents and nitrogen as a pressurization gas for a proper jet velocity of these agents. Phase equilibria for binary mixtures of nitrogen/HFC-22, nitrogen/HFC-125, and nitrogen/HFC-l34a were measured in the temperature range from 283.15K to 303.15K. For equilibrium measurement, we used a circulation type apparatus in which both vapor and liquid phases were continuously recirculated. The experimental data were relatively well correlated with the Peng-Robinson equation of state with Wong-Sandier mixing rules.

• Asian-Australasian Journal of Animal Sciences
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• v.20 no.4
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• pp.556-562
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• 2007

A total of 126 crossbred weanling pigs (average body weight of $6.3{\pm}0.3$ kg) were used to investigate the effect of chito-oligosaccharide (COS) on growth performance, nutrient digestibility, pH of gastro-intestinal tract (GI), intestinal and fecal microflora of young piglets. Pigs were allocated to three dietary treatments based on body weight and gender in a single factorial arrangement. Treatments were control (No COS), T1 (0.2% COS during starter (6-13 kg) and 0.1% COS during grower (13-30 kg) phases, and T2 (0.4% COS during starter (6-13 kg) and 0.3% COS during grower (13-30 kg) phases, respectively. Each treatment had 3 replicates and 14 pigs were raised in each pen. COS is a low molecular weight water-soluble chitosan that can be obtained from chitin of the crab shell after deacetylation with concentrated sodium hydroxide at high temperature and then further decomposition by chitosanase enzyme in the presence of ascorbic acid. For the starter and grower periods, there were no significant differences (p>0.05) in average daily gain (ADG) and feed to gain ratio among treatments. However, during the overall period (6-30 kg), T2 showed better (p<0.05) feed to gain ratio than other treatments. A digestibility study was conducted at the end of grower phase which showed improvement (p<0.05) in DM and crude fat digestibility in T2 over the control. At 25 kg body weight, 6 pigs per treatment (2 per replicate) were sacrificed to determine the effect of diets on pH and microbial count at different sections of the GI tract. The pH of the cecal contents in pigs fed 0.1% COS was higher (p<0.05) than in the other treatments. Total anaerobic bacterial number increased from cecum to rectum in all treatments. The weekly total bacterial counts showed higher (p<0.05) in feces of pigs fed COS than that of untreated pigs at the $8^{th}$ week. The number of fecal E. coli in untreated pigs at $4^{th}$ wk was 7.35 log CFU/g compared to 6.71 and 6.54 log CFU/g in 0.1 and 0.3% COS-treated pigs, respectively. Similarly, at $8^{th}$ wk, fecal clostridium spp. were lower in pigs fed 0.3% COS (5.43 log CFU/g) than in untreated pigs (6.26 log CFU/g). In conclusion, these results indicated that chito-oligosaccharide could improve feed efficiency in young pigs and inhibited the growth of harmful bacteria.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.309-315
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• 2013

$GdBa_2Cu_3O_{7-y}$(Gd123) powders were synthesized by the solid-state reaction method using $Gd_2O_3$ (99.9% purity), $BaCO_3$ (99.75%) and CuO (99.9%) powders. The synthesized Gd123 powder and the Gd123 powder with $Gd_2O_3$ addition ($Gd_{1.5}Ba_2Cu_3O_{7-y}$(Gd1.5)) were used as raw powders for the fabrication of Gd123 bulk superconductors. The Gd123 and Gd1.5 bulk superconductors were fabricated by sintering or a top-seeded melt growth (TSMG) process. The superconducting transition temperature ($T_{c,onset}$) of the sintered Gd123 was 93 K and the transition width was as large as 20 K. The $T_{c,onset}$ of the TSMG processed Gd123 was 82 K and the transition width was also as large as 12 K. The critical current density ($J_c$) at 77 K and 0 T of the sintered Gd123 and TSMG processed Gd123 were as low as a few hundreds A/$cm^2$. The addition of 0.25 mole $Gd_2O_3$ and 1 wt.% $CeO_2$ to Gd123 enhanced the $T_c$, $J_c$ and magnetic flux density (H) of the TSMG processed Gd123 sample owing to the formation of the superconducting phase with high flux pinning capability. The $T_c$ of the TSMG processed Gd1.5 was 92 K and the transition width was 1 K. The $J_cs$ at 77 K (0 T and 2 T) were $3.2{\times}10^4\;A/cm^2$ and $2.5{\times}10^4\;A/cm^2$, respectively. The H at 77 K of the TSMG-processed Gd1.5 was 1.96 kG, which is 54% of the applied magnetic field (3.45 kG).

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of Powder Materials
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• v.17 no.4
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• pp.312-318
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• 2010

High speed steels (HSS) were used as cutting tools and wear parts, because of high strength, wear resistance, and hardness together with an appreciable toughness and fatigue resistance. Conventional manufacturing process for production of components with HSS was used by casting. The powder metallurgy techniques were currently developed due to second phase segregation of conventional process. The powder injection molding method (PIM) was received attention owing to shape without additional processes. The experimental specimens were manufactured with T42 HSS powders (59 vol%) and polymer (41 vol%). The metal powders were prealloyed water-atomised T42 HSS. The green parts were solvent debinded in normal n-Hexane at $60^{\circ}C$ for 24 hours and thermal debinded at $N_2-H_2$ mixed gas atmosphere for 14 hours. Specimens were sintered in $N_2$, $H_2$ gas atmosphere and vacuum condition between 1200 and $1320^{\circ}C$. In result, polymer degradation temperatures about optimum conditions were found at $250^{\circ}C$ and $480^{\circ}C$. After sintering at $N_2$ gas atmosphere, maximum hardness of 310Hv was observed at $1280^{\circ}C$. Fine and well dispersed carbide were observed at this condition. But relative density was under 90%. When sintering at $H_2$ gas atmosphere, relative density was observed to 94.5% at $1200^{\circ}C$. However, the low hardness was obtained due to decarbonization by hydrogen. In case of sintering at the vacuum of $10^{-5}$ torr at temperature of $1240^{\circ}C$, full density and 550Hv hardness were obtained without precipitation of MC and $M_6C$ in grain boundary.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.100-102
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• 2013

Magnetron-sputtering법을 사용하여 기존에 연구하였던 CrAlN (Cr 7：Al 3)박막에 Si를 첨가하여 Si의 함량 변화에 따라 미세구조와 화학적 결합상태, 온도저항계수(TCR) 및 산화저항의 영향과 기계적특성 개선을 통한 multi-functional heater resistor layer로써의 가능성을 연구하였다. CrAlSiN 박막의 Si 함량에 변화에 따라 온도저항계수 변화를 확인하였으며 X-선 회절 분석(XRD) 패턴 분석결과 CrAlSiN 박막의 결정구조가 Bl-NaCl 구조를 가지고 있는 것을 확인하였으며 SEM과 AFM을 통한 표면 및 미세구조 분석결과 Si의 함량이 증가할수록 입자가 조밀해짐을 알 수 있었다. 최근 digital priting technology의 핵심 기술로 부각되고 있는 inkjet priting technology는 널리 태양전지뿐만 아니라 thin film process, lithography와 같은 반도체 공정 기술에 활용 할 수 있기 때문에 반도체 제조장비에도 사용되고 있으며, 현재 thermal inkjet 방식을 사용하고 있다. Inkjet printing technology는 전기 에너지를 잉크를 배출하기 위해 열에너지로 변환하는 thermal inkjet 방식을 사용하고 있는데, 이러한 thermal inkjet 방식은 기본적으로 전기저항이 필요하지만 electrical resistor layer는 잉크를 높은 온도에서 순간적으로 가열하기 때문에 부식이나 산화 등의 문제가 발생할 수 있어 이에 대한 보호층을 필요로 한다. 하지만, 고해상도, 고속 잉크젯 프린터, 대형 인쇄 등을 요구되고 있어 저 전력 중심의 잉크젯 프린터의 열효율을 방해하는 보호층 제거에 필요성이 제기되고 있다. 본 연구는 magnetron-sputtering을 사용하여 기존의 CrAlN 박막에 Si를 합성하여 anti-oxidation, corrosion resistance 그리고 low temperature coefficient of resistance 값을 갖는 multi-functional heater resistor layer로써 CrAlSiN 박막의 Si 함량에 따른 효과에 초점을 두었다. 본 실험은 CrAlN 박막에 Si 함량을 4~11 at%까지 첨가시켜 함량의 변화에 따른 특성변화를 확인하였다. 함량이 증가할수록 amorphous silicon nitride phase의 영향으로 박막의 roughness는 감소하였으며 XRD 분석결과 (111) peak의 Intensity가 감소함을 확인하였으며 SEM 관찰시 모든 박막이 columnar structure를 나타내었으며 Si함량이 증가할수록 입자가 치밀해짐을 보여주었다.Si함량이 증가할수록 CrAlN 박막에 비하여 면저항은 증가하였으며 TCR 측정결과 Si함량이 6.5 at%일 때 가장 안정한 TCR값을 나타내었다. Multi-functional heater resistor layer 역할을 하기 위해서, CrAlSiN 박막의 원소 분포, 표면 거칠기, 미세조직, 전기적 특성 등을 조사하였다. CrAlN 박막의 Si의 첨가는 크게 XRD 분석결과 주상 성장을 억제 할 수 있으며 SEM 분석을 통하여 Si 함량이 증가할수록 Si3N4 형성이 감소하며 입자크기가 작아짐을 확인하였다. 면저항의 경우 Si 함량이 증가함에 따라 높은 면저항을 나타내었으며 Si함량이 6.5 at%일 때 가장 낮은 TCR 값인 3120.53 ppm/K값을 보였다. 이 값은 상용되고 있는 heater resistor보다 높지만, CrAlSiN 박막이 더 우수한 기계적 특성을 가지고 있기 때문에 hybrid heater resistor로 적용할 수 있을 것으로 기대된다.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.377-382
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• 1998

Atomic layer deposition(ALD) of amorphous TiN films on $SiO_2$ between 17$0^{\circ}C$ and 21O$^{\circ}C$ has been investigated by alternate supply of reactant sources, Ti[N($C_2,H_5,CH_3)_2]_4$ [tetrakis(ethylmethylamminoltitanium: TEMAT] and $NH_3$. Reactant sources were injected into the reactor in the order of TEMAT vapor pulse, Ar gas pulse, $NH_3$. gas pulse and Ar gas pulse. Film thickness per cycle was saturated at around 1.6 monolayer(MU per cycle with sufficient pulse times of reactant sources at 20$0^{\circ}C$. The results suggest that film thickness per cycle could be beyond 1 MLicycie in ALD, which were explained by rechemisorption mechanisms of reactant sources. The ideal linear relationship be¬tween number of cycles and film thickness is confirmed. As a results of surface limited reactions of ALD, step cover¬age was excellent. Particles caused by the gas phase reactions between TEMAT and NH3 were almost free because TEMAT was seperated from $NH_3$ by the Ar pulse. In spite of relatively low substrate temperature, carbon impurity was incorporated below 4 at%.

• Journal of the Korean Electrochemical Society
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• v.7 no.4
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• pp.183-188
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• 2004

In order to develop polymer electrolyte for lithium/sulfur batteries, highly microporous P(VdF-HFP) membranes were prepared by phase inversion method. Porous structure was controlled by extracting NMP with mixture of deionized water and methanol. Porous structure of the membranes was observed with SEM. Polymer electrolytes were prepared by soaking the porous membranes in 1M $LiCF_3SO_3-TEGDME/EC$. The ionic conductivity of polymer electrolyte was found to be at high as $2\times10^{-3}S/cm$ when the polymer membrane extracted by $80\%$ methanol was used. The microporous polymer electrolyte optimized in this work displayed high ionic conductivity, uniform pore size, low interfacial resistance and stable ionic conductivity with storage time. The ionic conductivity of polymer electrolytes was measured with various lithium salts, and the conductivity showed $3.3\times10^{-3}S/cm$ at room temperature when $LiPF_6$ was used as a lithium salt.

• Sleep Medicine and Psychophysiology
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• v.8 no.1
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• pp.59-66
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• 2001

Objectives: This study examined the effect of mood and personality characteristics on psychophysiological responses measured by a biofeedback system in a normal population. Methods: Fifty healthy volunteers without any history of medical or psychiatric illnesses participated in this study. We measured the Spielberger trait anxiety inventory, Beck depression inventory, and Eysenck personality questionnaires in these subjects. Using the J & J biofeedback system, we also measured skin temperature, electrodermal response, forearm and frontal electromyography (EMG)s in 3 experimental conditions of baseline, stress, and recovery phases. Results: Trait anxiety did not show any significant correlation with psychophysiological responses except stress response in forearm EMG levels(r=0.282, p<0.05). Depressed mood was negatively correlated with forearm EMG levels in baseline (r=-0.299, p<0.05) and recovery phases(r=-0.314, p<0.05). Subjects with relatively high levels of depressed mood showed different stress and recovery responses in frontal EMG levels compared with those with relatively low levels of depressed mood (F=4.26, p<0.05). Extroverted subjects showed higher levels of forearm EMG than introverted ones in stress phase. Conclusion: Mood and personality characteristics in healthy subjects are closely related with psychophysiological responses measured by a biofeedback system. We suggest that mood and personality characteristics should be considered as important variables in analyzing abnormal psychophysiological responses in some psychiatric patients.