• Journal of Korea Foundry Society
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• v.43 no.5
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• pp.230-240
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• 2023

The pitting corrosion behavior of 329LD cast lean duplex stainless steel and CF3M cast austenitic stainless steel was investigated in chloride environments. The pitting corrosion resistance of the 329LD alloy was superior to that of the CF3M alloy because the pitting potential, passive region, and critical pitting temperature of the low Ni-low Mo 329LD alloy were higher than those of the high Ni-medium Mo commercial CF3M alloy. There are two main reasons for the enhancement of the pitting corrosion resistance of high Cr-low Momedium N 329LD alloy compared to the low Cr-medium Mo CF3M alloy: First, the pitting resistance equivalent number (PREN_δ+γ) value of the 329LD alloy is higher than that of the CF3M alloy. Second, the passive region of the 329LD alloy is larger than that of the CF3M alloy. It indicates that the synergistic effect of the three elements by adding high Cr and low Mo-medium N to the 329LD alloy enhances the passivity of the passive film, thereby increasing the pitting corrosion resistance. It was verified that based on the PREN_γ of austenite (γ) and PREN_δ of ferrite (δ) values calculated using an N-factor of 16, the pitting corrosion of the 329LD alloy was selectively initiated at the γ-phases because PREN_γ value of austenite (γ) was smaller than that of ferrite (δ), and finally propagated from the γ-phase to the δ-phase.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.969-974
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• 1998

The effect of vanadium, which is known to decrease the stacking fault energy of Fe-base alloys, on the microstructure and elevated temperature sliding wear resistance of Fe-20Cr- 1.7C- 1Si alloy was investigated. The maximum amount of vanadium maintaining the austenitic matrix seems to be about 3wt.% in Fe-20Cr- 1.7C-1Si-xV (x = 0, 1, 3, 6. lOwt.%) alloys and the austenitic alloys showed better wear resistance than ferritic alloys. It was considered to be due to the low stacking fault energy and $\gamma->\alpha$ strain-induced phase transformation at rmm temperature. It was shown from elevated temperature sliding tests up to .$225^{\circ}C$ that the addition of vanadium increases the temperature, at which the transition from oxidative wear to adhesive wear occur, and the amount of d formed at $225^{\circ}C$. Thus, it was considered that the addition of vanadium improves the elevated temperature sliding wear resistance of Fe-20Cr- 1.7C - 1Si by reducing the increasing rate of stacking fault energy with temperature and by increasing Ma temperature.

• Journal of The Korean Society of Grassland and Forage Science
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• v.41 no.3
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• pp.183-188
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• 2021

The increase in temperature due to climate warming is predicted to affect crop yields in the future. Until now, various types of OTC (open top chamber) that simulate the future climate condition have been developed and used to study the effect of temperature increase due to global warming on maize growth. However, in most OTCs, high equipment and maintenance costs were required to artificially increase the temperature. This study was carried to develop a cost-effective and simple OTC suitable for climate warming experiments for forage maize. Three octagonal OTCs with a height of 3.5 m × a diameter of 4.08 m and a partially covered top were constructed. The lower part of OTC covered film was opened at a height of 26 cm (OTC-26), 12 cm (OTC-12) from the ground surface, or not opened (0 cm, OTC-0). Mean air temperatures during the daytime on a sunny day in OTC-0, OTC-12 and OTC-26 increased to 3.23℃, 1.33℃, and 0.89℃, respectively, compared to the ambient control plot. For a pilot test, forage maize, 'Gwangpyeongok' was grown at OTCs and ambient control plots. As a result, in the late maize vegetative growth phase (July 30), the plant height was increased more than 45% higher than the ambient control plot in all OTC plots, and the stem diameter also increased in all OTC plots. These results indicate that it is possible to set the temperature inside the OTC by adjusting the opening height of the lower end of the OTC, and it can be applied to study the response of forage maize to elevated temperature. An OTC, with its advantages of energy free, low maintenance cost, and simple temperature setting, will be helpful in studying maize growth responsiveness to climate warming in the future.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.133-141
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• 2019

High specific surface area zirconia with acid-basic property was synthesized by precipitation using reflux method or hydrothermal synthesis method using ammonium hydroxide solution as precipitant in the range of pH of Zr solution from 2 to 10. The prepared zirconia was characterized by the nitrogen adsorption, X-ray diffraction (XRD), isopropanol temperature programmed desorption (IPA-TPD), scanning electron microscopy and X-ray photoelectron spectroscopy, and the catalytic activity in the IPA decomposition reaction was correlated with the acid-basic properties. When using reflux method, high pH of Zr solution was required to obtain high fraction of tetragonal zirconia, and pure tetragonal zirconia was possible at pH 9 or higher. High pH was required to obtain high specific surface area zirconia, and the hydrous zirconia synthesized at pH 10 had high specific surface area zirconia of $260m^2g^{-1}$ even after calcination at $600^{\circ}C$. However, hydrothermal synthesis with high pressure under the same conditions resulted in very low specific surface area below $40m^2g^{-1}$ and monoclinic phase zirconia was synthesized. High pH of the solution was required to obtain high specific surface area tetragonal phase zirconia. In hydrothermal synthesis requiring high pressure, monoclinic zirconia was produced irrespective of the pH of the solution, and the specific surface area was relatively low. Zirconia with high specific surface area and tetragonal phase was predominantly acidic compared to basicity and only propylene, which was observed as selective dehydration reaction in IPA decomposition reaction, was produced.

• Asian-Australasian Journal of Animal Sciences
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• v.30 no.3
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• pp.432-438
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• 2017

Objective: The objective of this study was to evaluate the effect of combinations of $NaNO_2$ and NaCl concentrations on Listeria monocytogenes (L. monocytogenes) growth in emulsion-type sausage. Methods: Emulsion-type sausages formulated with different combinations of $NaNO_2$ (0 and 10 ppm) and NaCl (1.00%, 1.25%, and 1.50%) were inoculated with a five-strain L. monocytogenes mixture, and stored at $4^{\circ}C$, $10^{\circ}C$, and $15^{\circ}C$, under aerobic or vacuum conditions. L. monocytogenes cell counts were measured at appropriate intervals, and kinetic parameters such as growth rate and lag phase duration (LPD) were calculated using the modified Gompertz model. Results: Growth rates increased (0.004 to 0.079 Log colony-forming unit [CFU]/g/h) as storage temperature increased, but LPD decreased (445.11 to 8.35 h) as storage temperature and NaCl concentration increased. The effect of combinations of NaCl and low-$NaNO_2$ on L. monocytogenes growth was not observed at $4^{\circ}C$ and $10^{\circ}C$, but it was observed at $15^{\circ}C$, regardless of atmospheric conditions. Conclusion: These results indicate that low concentrations of $NaNO_2$ and NaCl in emulsion-type sausage may not be sufficient to prevent L. monocytogenes growth, regardless of whether they are vacuum-packaged and stored at low temperatures. Therefore, additional techniques are necessary for L. monocytogenes control in the product.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.1-7
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• 2021

ε-Ga2O3, a metastable phase of Ga2O3, has excellent compatibility with substrates having a hexagonal structure or a quasi-hexagonal structure, so that a film having a relatively lower surface roughness and defect density than β-Ga2O3 can be obtained easily. Accordingly, we attempted to fabricate a high-quality β-Ga2O3 film with a low surface roughness and defect density using the property of phase transition to β-Ga2O3 when ε-Ga2O3 is annealed at a high temperature. For this, the growth of high-quality ε-Ga2O3 films must be preceded. In this study, the optimal flow rate was investigated by analyzing the structural and morphological characteristics of the ε-Ga2O3 film according to the supplied precursor ratio. In addition, the annealing condition and the effect of β-Ga2O3 mixed in the ε-Ga2O3 film on the crystallinity of β-Ga2O3 after phase transition were also investigated.

• Nuclear Engineering and Technology
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• v.56 no.6
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• pp.2174-2181
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• 2024

In this work, Sr_0.5Zr₂(PO₄)₃-SmPO₄ dual-phase ceramics were prepared via in-situ synthesis process, which is a potential novel nuclear waste form for immobilizing the fission product ⁹⁰Sr and the trivalent actinide radionuclides in high-level waste (HLW). And the preparation technology, microstructure and chemical durability of Sr_0.5Zr₂(PO₄)₃-SmPO₄ dual-phase ceramics were systematically investigated. It was confirmed that the optimum microwave-sintering temperature (1050 ℃) and heat preservation time (1.5 h) is estimated by Archimedes method. Besides, the as-prepared samples that were consisted of strontium zirconium phosphate (SrZP) and monazite showed the remarkable densification, in which the two crystalline phases were intermixed well with each other. Meanwhile, the formation and evolution of microstructure was also consistent with the variational rule of Sr_0.5Zr₂(PO₄)₃/SmPO₄, indicating that there was not mutual reaction during the in-situ synthesis process. The PCT and MCC-1 experimental results demonstrated that the elemental normalized leaching rates of tested samples are all at a low level (LR_Sr ~10^-4 g·m^-2·d^-1, LR_Zr ~10^-8-10^-6 g·m^-2·d^-1, LR_Sm ~10^-7-10^-5 g·m^-2·d^-1 and LR_P ~10^-4 g·m^-2·d^-1). It is indicated that Sr_0.5Zr₂(PO₄)₃-SmPO₄ dual-phase ceramics possesses excellent chemical durability for HLW disposal.

• The Bulletin of The Korean Astronomical Society
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• v.40 no.1
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• pp.80.1-80.1
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• 2015

We present a study of outflows on 24 embedded young stellar objects selected from the source list of the Dust, Ice, and Gas in Time (DIGIT) Herschel key program. To study the relation between the CO outflows observed in low-J transitions and the properties of protostars more consistently with a homogeneous data set, we mapped the CO outflows of the selected targets in the J = 1-0 and J = 2-1 lines with two Korean telescopes (SRAO and TRAO). We compare CO outflow force ($F_{CO}$) with the bolometric luminosity, ($L_{bol}$) bolometric temperature, and the FIR molecular line luminosities of CO, $H_2O$, OH, and [O I] detected by the Herschel-PACS observations. We find that $F_{CO}$ of J = 1-0 is greater than that of 2-1 by a factor of ~ 2. The well known correlation between $F_{CO\;2-1}$ and $L_{bol}$ is not very evident in our sample as a whole, but they show a rather strong correlation when IRAM 04191+1522 is excluded. IRAM 04191+1522 has relatively high $F_{CO\;2-1}$ in spite of its low $L_{bol}$. This object is a well-known VeLLO, which is believed in the quiescent phase of the episodic mass accretion in the embedded stage. $L_{bol}$ traces a current accretion, but $F_{CO\;2-1}$ traces accretion happened long ago. Therefore, the low-$L_{bol}$ with the high-$F_{CO\;2-1}$ can be explained by the episodic accretion. $F_{CO\;2-1}$ shows little correlation with individual FIR line luminosities of CO, $H_2O$, OH, while [O I] and total FIR line luminosity seem to have correlations with $F_{CO\;2-1}$. This result is interpreted as the accretion energy deposits on species differently depending on shock properties, but the total FIR line luminosity sums the total accretion energy dispersed to different species.

• ETRI Journal
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• v.36 no.2
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• pp.317-320
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• 2014

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.281-281
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• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.