• Journal of IKEEE
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• v.12 no.3
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• pp.176-183
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• 2008

The high efficiency power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device is proposed in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. DTMOS with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit as a block. The Saw-tooth generator is made to have 1.2 MHz oscillation frequency and full range of output swing from ground to supply voltage(VDD:3.3V). The comparator is designed with two stage OP amplifier. And the error amplifier has 70dB DC gain and $64^{\circ}$ phase margin. DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device, achieved the high efficiency near 95% at 100mA output current. And DC-DC converter is designed with LDO in stand-by mode which fewer than 1mA for high efficiency.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1609-1618
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• 2015

DC microgrids are considered as prospective systems because of their easy connection of distributed energy resources (DERs) and electric vehicles (EVs), reduction of conversion loss between dc output sources and loads, lack of reactive power issues, etc. These features make them very suitable for future industrial and commercial buildings' power systems. In addition, the bipolar-type dc system structure is more popular, because it provides two voltage levels for different power converters and loads. To keep voltage balanced in such a dc system, a bidirectional dual buck-boost voltage balancer with direct coupling is introduced based on P-cell and N-cell concepts. This results in greatly enhanced system reliability thanks to no shoot-through problems and lower switching losses with the help of power MOSFETs. In order to increase system efficiency and reliability, a novel burst-mode control strategy is proposed for the dual buck-boost voltage balancer. The basic operating principle, the current relations, and a small-signal model of the voltage balancer are analyzed under the burst-mode control scheme in detail. Finally, simulation experiments are performed and a laboratory unit with a 5kW unbalanced ability is constructed to verify the viability of the bidirectional dual buck-boost voltage balancer under the proposed burst-mode control scheme in low-voltage bipolar-type dc microgrids.

• Journal of IKEEE
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• v.14 no.2
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• pp.82-89
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• 2010

In this paper, a buck-boost converter using three DTMOS(Dynamic Threshold Voltage MOSFET) switching devices is presented. The efficiency of the proposed converter is higher than that of conventional buck-boost converter. DTMOS with low on-resistance is designed to decrease conduction loss. The threshold voltage of DTMOS drops as the gate voltage increases, resulting in a much higher current handling capability than standard MOSFET. In order to improve the power efficiency at the high current level, the proposed converter is controlled with PWM(pulse width modulation) method. The converter has maximum output current 300mA, input voltage 3.3V, output voltage from 700mV to 12V, 1.2MHz oscillation frequency, and maximum efficiency 90%. Moreover, the LDO(low drop-out) is designed to increase the converting efficiency at the standby mode below 1mA.

• The Transactions of the Korea Information Processing Society
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• v.3 no.4
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• pp.697-708
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• 1996

In this paper, we study reactive congestion control with priority in ATM network. The priority schemes for buffer access, partial buffer sharing have been investigated in order to improve the utilization of ATM network resources the network and to satisfy the most demanding traffic class. We consider in this paper a discrete-time queueing model for partial buffer sharing with two Markov modulated Poisson inputs. This model can be used to analyze the the effects of the partial buffer sharing priority scheme on system performance for realistic cases of bursty services. Explicit formulae are derived for the number of cells in the system and the loss probabilities for the traffic. Congestion may still occur because of unpredictable statistical fluctuation of traffic sources even when preventive control is performed in the network. In this Paper, we study reactive congestion control, in which each source changes its cell emitting rate a daptively to the traffic load at the switching node. Our intention is that,by incorporating such a congcstion control method in ATM network,more efficient congsestion control is established. We develope an analytical model,and carry out an approximateanalysis of reactive congestion con-trol with priority.Numerical results show that several orders of magnitude improvement in the loss probability can be achieved for the high priority class with little impact on the low priority class performance.And the results show that the reactive congestion control with priority are very effective in avoiding congestion and in achieving the statistical gain.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Journal of Power Electronics
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• v.15 no.5
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• pp.1305-1317
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• 2015

Distributed generation systems (DGSs) have been getting more and more attention in terms of renewable energy use and new generation technologies in the past decades. The self-excited induction generator (SEIG) occupies an important role in the area of energy conversion due to its low cost, robustness and simple control. Unlike synchronous generators, the SEIG has to absorb capacitive reactive power from the outer device aiming to stabilize the terminal voltage at load changes. This paper presents a novel static VAR compensator (SVC) called a magnetic energy recovery switch (MERS) to serve as a voltage controller in SEIG powered DGSs. In addition, many small scale SEIGs, instead of a single large one, are applied and devoted to promote the generation efficiency. To begin with, an expandable mathematic model based on a d-q equivalent circuit is created for parallel SEIGs. The control method of the MERS is further improved with the objective of broadening its operating range and restraining current harmonics by parameter optimization. A hybrid control strategy is developed by taking both of the stand-alone and grid-connected modes into consideration. Then simulation and experiments are carried out in the case of single and double SEIG(s) generation. Finally, the measurement results verify that the proposed DGS with SVC-MERS achieves a better stability and higher feasibility. The major advantages of the mentioned variable reactive power supplier, when compared to the STATCOM, include the adoption of a small DC capacitor, line frequency switching, simple control and less loss.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.121-126
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• 2013

Cycloconverter used as a power conversion device in the speed and torque control system of AC machines has the advantage of a simple control and a large torque at low speed. In addition, because a rectifier, a DC link, and an inverter are not installed, this system is simple and suitable for large power system. If a power conversion device, which is currently used as a propulsion motor of large vessel, is changed into cycloconverter, the system is simplified and then the installation costs can be significantly reduced. However, conventional cycloconverter has the increased harmonics because the power loss is large and the waveform of output voltage is distorted, due to the high-speed switching of power semiconductor devices. In order to improve these shortcomings, this paper describes a phase shifting filter which is composed of two inputs with different phases in the primary side and one output in the secondary one. As the voltage waveforms with two different phases are added and transformed into the secondary side, these outputs are close to sinusoidal waves. Thereby the voltage waveforms, which are applied to the propulsion motors, are improved and total harmonic distortions (THDs) are significantly reduced.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.1-7
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• 2016

In this paper, the tunable filter based on high power cavity using mechanical switch for 1.5 GHz band is presented. The LPF is inserted to eliminate the spurious wave, coupler is embeded to extract the output power, and then the tunable filter system is configured using mechanical switch. The LPF obtains attenuation over 40 dB between 4 GHz and 12.75 GHz, Coupler is satisfied with coupling value 40 dB and coupling isolation over 55 dB. The tunable filter system using mechanical switch obtains insertion loss 0.88 dB at bypass mode between 1,495.9 MHz and 1,510. 9 MHz, 3.29 dB at fil mode between 1,495.9 MHz and 1,500.9 MHz. It is also satisfied with output power of 132 W at the center frequency 1,498.4 MHz, and switching time below 10 ms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.777-788
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• 2014

This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using $0.18{\mu}m$ BCD process with high power MOSFET options, and the die area is $1870{\mu}m{\times}1430{\mu}m$. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.