• Journal of IKEEE
• /
• v.10 no.2 s.19
• /
• pp.149-155
• /
• 2006

In this study, the design of low voltage DC-DC converter with low triggering ESD (Electro-Static Discharge) protection circuit was investigated. The purpose of this paper is design optimization for low voltage(2.5V to 5.5V input range) DC-DC converter using CMOS switch. In CMOS switch environment, a dominant loss component is not switching loss but conduction loss at 1.2MHz switching frequency. In this study a constant frequency PWM converter with synchronous rectifier is used. And zener Triggered SCR device to protect the ESD phenomenon was designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 8V.

• Proceedings of the KIPE Conference
• /
• 2015.07a
• /
• pp.329-330
• /
• 2015

This paper introduces a low-frequency switching method for the neutral line of TNPC inverters to achieve high efficiency. By applying the method, the switching loss in the neutral line is reduced. In order to compensate the current distortion near zero-crossing points, the partial switching strategy is applied. Both the simulation and the experimental results verify the usefulness of the proposed method.

• Journal of Power Electronics
• /
• v.15 no.6
• /
• pp.1489-1498
• /
• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

• Journal of Power Electronics
• /
• v.10 no.4
• /
• pp.335-341
• /
• 2010

In this paper, an interleaved soft switching boost converter for a Photovoltaic Power Conditioning System (PV-PCS) with high efficiency is proposed. In order to raise the efficiency of the proposed converter, a 2-phase interleaved boost converter integrated with soft switching cells is used. All of the switching devices in the proposed converter achieve zero current switching (ZCS) or zero voltage switching (ZVS). Thus, the proposed circuit has a high efficiency characteristic due to low switching losses. To analyze the power losses of the proposed converter, two experimental sets have been built. One consists of normal devices (MOSFETs, Fast Recovery (FR) diodes) and the other consists of advanced power devices (CoolMOSs, SiC-Schottky Barrier Diodes (SBDs)). To verify the validity of the proposed topology, theoretical analysis and experimental results are presented.

• Journal of Power Electronics
• /
• v.6 no.1
• /
• pp.83-93
• /
• 2006

A new high efficiency and low profile on-board DC/DC converter for digital car audio amplifiers is proposed. The proposed converter shows low conduction loss due to the low voltage stress of the secondary diodes, a lack of DC magnetizing current for the transformer, and a lack of stored energy in the transformer. Moreover, since the primary MOSFETs are turned-on under zero-voltage-switching (ZVS) conditions and the secondary diodes are turned-off under zero-current-switching (ZCS) conditions, the proposed converter has minimized switching losses. In addition, the input filter can be minimized due to a continuous input current, and an output inductor is absent in the proposed converter. Therefore, the proposed converter has the desired features, high efficiency and low profile, for a viable power supply for digital car audio amplifiers. A 60W industrial sample of the proposed converter has been implemented for digital car audio amplifiers with a measured efficiency of $88.3\%$ at nominal input voltage.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.25 no.6
• /
• pp.490-495
• /
• 2020

The power loss of large-capacity systems using single-phase inverters has attracted considerable attention. In this study, optimal switching sequence model prediction control at a low switching frequency is proposed to reduce the power loss in a high-power inverter system, and a compensation method that can be utilized for model prediction control is developed to reduce errors in accordance with sampling values. When a three-level, single-phase inverter using a switching frequency of 600 Hz and a sampling frequency of 12 kHz is adopted, the power factor is improved from 0.95 to 0.99 through 3 kW active power control. The performance of the controller is also verified.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.4 no.2
• /
• pp.152-158
• /
• 1999

Due to high power ratings and low conduction loss, the TGBT has become more attractive in switching power supplies. However, its lower turn-on and turn-off characteristics than those of MOSFET cause severe switching loss and s switching frequency limitation. This paper proposes 2.4kW. 48V. high efficiency half-bridge DC-DC converter using p paralleled TGBT-MOSFET switch concept to use the merits of TGBTs and MOSFETs. Tn parallel switches. each of I TGBT and MOSFET plays its part during on-periods and switching instants. The switching loss is analyzed by l linearized modelling and the operation of the converter are investigated by simulation results.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.22 no.2
• /
• pp.150-158
• /
• 2017

This study proposes a new pulse-width modulation switching pattern for the low conduction loss of a three-level neutral point clamped (NPC)-based dual-active bridge (DAB) converter. The operational principle for a bidirectional power conversion is a phase-shift modulation. The conventional switching method of the three-level NPC-based DAB converter shows a symmetric switching pattern. This method has a disadvantage of high root-mean-square (RMS) value of the coupling inductor current, which leads to high conduction loss. The proposed switching method shows an asymmetrical pattern, which can reduce the RMS value of the inductor current with lower conduction loss than that of the conventional method. The performance of the proposed asymmetrical switching method is theoretically analyzed and practically verified using simulation and experiment.

• Proceedings of the KIPE Conference
• /
• 1998.10a
• /
• pp.713-718
• /
• 1998

Due to high power ratings and low conduction loss, the IGBT has become more attractive in high power applications. However, its slower characteristics than those of MOSFET cause severe switching losses and switching frequency limitation. This paper proposes the IGBT's soft switching concept with the help of MOSFET, where each of the IGBT and MOSFET plays its role during on-periods and switching instants. Also, the switching losses are analyzed by using the linearized modeling and the modeling and the operations of a converter are investigated to confirm the soft switching of IGBT's.

• Journal of Power Electronics
• /
• v.7 no.3
• /
• pp.181-190
• /
• 2007

This paper presents a novel circuit topology of a DC bus line series switch and parallel snubbing capacitor-assisted soft-switching PWM full-bridge inverter type DC-DC power converter with a high frequency planar transformer link, which is newly developed for high performance arc welding machines in industry. The proposed DC-DC power converter circuit is based upon a voltage source-fed H type full-bridge soft-switching PWM inverter with a high frequency transformer. This DC-DC power converter has a single power semiconductor switching device in series with an input DC low side rail and loss less snubbing capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge arms and DC bus line can achieve ZCS turn-on and ZVS turn-off transition commutation. Consequently, the total switching power losses occurred at turn-off switching transition of these power semiconductor devices; IGBTs can be reduced even in higher switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules can be realized at 60 kHz. It is proved experimentally by power loss analysis that the more the switching frequency increases, the more the proposed DC-DC power converter can achieve a higher control response performance and size miniaturization. The practical and inherent effectiveness of the new DC-DC converter topology proposed here is actually confirmed for low voltage and large current DC-DC power supplies (32V, 300A) for TIG arc welding applications in industry.