• Current Applied Physics
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• 제18권12호
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• pp.1492-1495
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• 2018

This paper studies the influence of temperature on electrical resistivity in ${\alpha}-InAs$ thin films between 30 K-2K based on the analysis of Mott VRH model and ES VRH model. The effect of the interactions between electrons at lower temperature must be considered, therefore, ES VRH conduction will dominate mechanism, and the crossover from Mott to ES VRH conduction is observed about 7 K. Based on available experiment data and VRH conduction model, the parameters of VRH conduction are determined. And the calculated values of $T_C$ are consistent with the experimental results. In addition, $R_M/{\xi}$, ${\Delta}_M/kT$, $R_{ES}/{\xi}$ and ${\Delta}_{ES}/kT$ are satisfied with the validity of Mott and ES models. Furthermore, the temperature dependence of resistivity at low temperature obeys a universal scaling law, which well describes the overall temperature range of VRH conduction. However, the values of $T^{\prime}_M$ from the universal function are two order of magnitudes lower than $T_M$ deduced from fitting experiment.

• 센서학회지
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• 제31권2호
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• pp.115-119
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• 2022

A readout circuit for a mercury-cadmium-telluride (MCT)-amplified mid-wave infrared (IR) photodetector was realized and applied to noncontact chemical agent detectors based on a quantum cascade laser (QCL). The QCL emitted 250 times for each wavelength in 0.2-㎛ steps from 8 to 12 ㎛ with a frequency of 100 kHz and duty ratio of 10%. Because of the nonconstant QCL emission power during on-duty, averaging the photodetector signals is essential. Averaging can be performed in digital back-end processing through a high-speed analog-to-digital converter (ADC) or in analog front-end processing through an integrator circuit. In addition, it should be considered that the 250 IR data points should be completely transferred to a PC during each wavelength tuning period of the QCL. To average and minimize the IR data, we designed a readout circuit using the analog front-end processing method. The proposed readout circuit consisted of a switched-capacitor integrator, voltage level shifter, relatively low-speed analog-to-digital converter, and micro-control unit. We confirmed that the MCT photodetector signal according to the QCL source can be accurately read and transferred to the PC without omissions.

• Tribology and Lubricants
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• 제39권2호
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• pp.56-60
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• 2023

In this study, we evaluate the anisotropic flow of droplets according to the directionality of asperities. We manufacture a mold with an inclined hole by adjusting the jig angle using a high-power diode laser. Using the manufactured mold, we prepare specimens for wettability studies by the micro molding technique. We fabricate twelve kinds of surfaces with micro-asperities inclined at 0°, 15°, 30°, and 45° for asperity pitches of 100 ㎛, 200 ㎛, and 300 ㎛. We evaluate the static and dynamic behaviors of the droplets as a function of the asperities pitch and inclination angles. The anisotropic effect increases as the pitch increases between asperities, and the anisotropic flow characteristics increase as the inclination angle of the asperities increases. On the surface with hole pitches of 100 ㎛ and 200 ㎛, the contact angle of the droplet shows high hydrophobicity at approximately 160°, but on the surface with the 300-㎛ hole pitch, the contact angle is approximately 110°, indicating that the hydrophobic effect rapidly reduces. Additionally, when the inclination angle of the asperities is approximately 30°, the left and right contact angle deviations of the droplet are the lowest, showing that the roll-off angle is relatively low.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2004년도 춘계학술대회 논문집
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• pp.29-33
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• 2004

본 논문에서는 패러데이 효과(Faraday effect)를 이용한 초고압 전력설비에서의 대전류 측정을 위한 광CT의 특성에 대한 기초 연구를 기술하였다. 1310[nm] Laser Diode를 광원으로 사용하고 PIN-Photodiode를 수신부로 사용하였다. 광의 전송로는 파이버 내에서 편광상태를 유지 할 수 있는 30[m]의 싱글모드 파이버를 사용하였다. 전류의 측정은 400[A]에서 1300[A]까지의 범위에서 측정하였으며 온도는 $20[^{\circ}C]$에서 $50[^{\circ}C]$까지 측정하였다. 동일한 실험 환경 하에서 출력의 크기는 인가전류가 증가할수록, 온도가 낮을수록 비례하여 증가하였다. 온도가 $50[^{\circ}C]$의 경우 최대 $50[^{\circ}C]$의 오차율을 나타냈으며, $40[^{\circ}C],\;30[^{\circ}C],\;20[^{\circ}C]$의 경우 각각 최대 오차 0.16[%], 1.24[%], 0.07[%]의 오차율을 보였다.

• Current Photovoltaic Research
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• 제7권4호
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• pp.111-120
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• 2019

The output power of a crystalline silicon (c-Si) photovoltaic (PV) module is not directly the sum of the powers of its unit cells. There are several losses and gain mechanisms that reduce the total output power when solar cells are encapsulated into solar modules. Theses factors are getting high attention as the high cell efficiency achievement become more complex and expensive. More research works are involved to minimize the "cell-to-module" (CTM) loss. Our paper is aimed to focus on electrical losses due to interconnection and mismatch loss at PV modules. Research study shows that among all reasons of PV module failure 40.7% fails at interconnection. The mismatch loss in modern PV modules is very low (nearly 0.1%) but still lacks in the approach that determines all the contributing factors in mismatch loss. This review paper is related to study of interconnection loss technologies and key factors contributing to mismatch loss during module fabrication. Also, the improved interconnection technologies, understanding the approaches to mitigate the mismatch loss factors are precisely described here. This research study will give the approach of mitigating the loss and enable improvement in reliability of PV modules.

• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.396-399
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• 2002

Intense quasi-monochromatic x-ray irradiation from the linear plasma target is described. The plasma x-ray generator employs a high-voltage power supply, a low-impedance coaxial transmission line, a high-voltage condenser with a capacity of about 200 nF, a turbo-molecular pump, a thyristor pulse generator as a trigger device, and a flash x-ray tube. The high-voltage main condenser is charged up to 55 kV by the power supply, and the electric charges in the condenser are discharged to the tube after triggering the cathode electrode. The x-ray tube is of a demountable triode that is connected to the turbo molecular pump with a pressure of approximately 1 mPa. As electron flows from the cathode electrode are roughly converged to the molybdenum target by the electric field in the tube, the weakly ionized plasma, which consists of metal ions and electrons, forms by the target evaporating. In the present work, the peak tube voltage was almost equal to the initial charging voltage of the main condenser, and the peak current was about 20 kA with a charging voltage of 55 kV. When the charging voltage was increased, the linear plasma x-ray source grew, and the characteristic x-ray intensities of K-series lines increased. The quite sharp lines such as hard x-ray lasers were clearly observed. The quasi-monochromatic radiography was performed by a new film-less computed radiography system.

• 한국광학회지
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• 제4권4호
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• pp.420-427
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• 1993

융착 접속 기술을 이용하여 다중모우드 광섬유와 단일 모우드 광섬유내에 유전체 박막 거울을 제작하였다. $45{\circ}$ 유전체 거울이 내장된 광섬유는 극소형이며, 광학적인 손실이 매우 작고(1.3 ${\mu}m$에서, 다중 모우드 광섬유의 경우 0.2dB, 단일 모우드 광섬유의 경우 0.5dB), 기계적 강도가 우수한 결합기로 사용될 수 있다. 반사율은 파장에 따라 변화하며, 편광에 매우 민감하였다. 백색광을 사용하여 유전체 거울로부터 반사되는 출력 파워를 원거리 스캔하며 측정하였을 때 출력 빔의 모양은 거의 원형 대칭으로써 최대 파워의 5%에서 측정된 종횡비는 1.09이었다. 다이오우드 레이저 광원을 사용하여 측정한 다중모우드 광섬유 결합기의 광분파율은 종래의 FBT(Fused Biconical Taper) 결합기보다 입력 광신호의 결합 조건에 따른 변화가 훨씬 적어서 사용하는 광통신 시스템의 모우드 잡음에 덜 민감하다. 광섬유 축에 수직하게 증착된 다층 유전체 거울들의 반사율 스펙트럼 특성을 측정하였으며, 행렬 해석법을 사용하여 실험 결과를 분석, 고찰하였다.

• 한국의학물리학회지:의학물리
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• 제16권2호
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• pp.104-109
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• 2005

암치료에 사용되고 있는 광역학 치료는 환자에게 광민감제를 투여하고 다이오드 레이저(630 nm)를 조사하여 생성되는 단일상태 산소와 자유 라디칼에 의해 암조직을 괴사시키는 치료방법이다. 현재 광역학 치료의 문제점은 부피가 큰 종양이나 고형암에서는 빛이 종양전체를 투과할 수 없으므로 광역학 치료의 효과가 떨어지는 것이다. 따라서 이 문제를 해결하기 위하여 간질성 광역학 치료법을 개발하고자 한다. 생체조직내의 정확한 광선량 측정이 간질성광역학치료의 효과에 매우 중요한 영향을 주므로, 실험 연구에 사용된 계수는 실제 생체조직의 광학 계수이다. 생체조직 대부분은 가시광선영역에서 큰 산란계수를 가지며, 투과 깊이에 많은 영향을 미치는 것으로 확인되었다. 가시영역에서의 인체조직의 투과깊이는 약 $15\~20mm$이었다. 몬테칼로 시뮬레이션(Monte Carlo simulation)을 이용하여 생체조직내의 광전파, 광선량, 에너지율, 투과깊이를 잘 측정할 수 있음을 알았다. 그리고 이 시뮬레이션 결과를 가지고 고형암에 간질성 광역학 치료를 하여 치료효과를 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.84-93
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• 2001

An electromagnetic micro x-y stage for probe-based data storage (PDS) has been fabricated. The x-y stage consists of a silicon body inside which planar copper coils are embedded, a glass substrate bonded to the silicon body, and eight permanent magnets. The dimensions of flexures and copper coils were determined to yield $100{\;}\mu\textrm{m}$ in x and y directions under 50 mA of supplied current and to have 440 Hz of natural frequency. For the application to PDS devices, electromagnetic stage should have flat top surface for the prevention of its interference with multi-probe array, and have coils with low resistance for low power consumption. In order to satisfy these design criteria, conducting planar copper coils have been electroplated within silicon trenches which have high aspect ratio ($5{\;}\mu\textrm{m}$in width and $30{\;}\mu\textrm{m}$in depth). Silicon flexures with a height of $250{\;}\mu\textrm{m}$ were fabricated by using inductively coupled plasma reactive ion etching (ICP-RIE). The characteristics of a fabricated electromagnetic stage were measured by using laser doppler vibrometer (LDV) and dynamic signal analyzer (DSA). The DC gain was $0.16{\;}\mu\textrm{m}/mA$ and the maximum displacement was $42{\;}\mu\textrm{m}$ at a current of 180 mA. The measured natural frequency of the lowest mode was 325 Hz. Compared with the designed values, the lower natural frequency and DC gain of the fabricated device are due to the reverse-tapered ICP-RIE process and the incomplete assembly of the upper-sided permanent magnets for LDV measurements.