• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.5
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• pp.1089-1095
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• 2005

This paper presents a new low-cost Built-In Self-Test (BIST) circuit for 50Hz low noise amplifier (LNA). The BIST circuit is designed for system-on-chip (SoC) transceiver environment. The proposed BIST circuit measures the LNA specifications such as input impedance, voltage gaih, noise figure, and input return loss all in a single SoC environment.

• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.48-52
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• 2005

The research topic of super-RENS technology is shifting from the signal intensity (CNR; Carrier to Noise Ratio) to the signal uniformity (Jitter or bER). To achieve an uniform signal characteristics, it is important to reduce signal fluctuation in a super-RENS disc. In this study, we investigated the relation between signal fluctuation and low frequency noise (LFN), and analyzed LFN increase in recording and readout processes. It was found that signal fluctuation had a close relationship with the LFN. Also, it was found that the recorded mark shape such a bubble type and high readout power increased the LFN in recording and readout process of a super-RENS disc. So, using non-bubble type recording material and low super-resolution readout material, we markedly improved the LFN in a super-RENS disc.

• Progress in Superconductivity
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• v.4 no.1
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• pp.68-73
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• 2002

We have fabricated YBCO SQUID 1st order gradiometers on $30^{\circ}$STO bicrystal substrate. The pickup coil size was 3.8mm$\times$3.8mm and baseline was 5mm. Three types of SQUID gradiometer were designed and tested for unshielded operation; solid pickup coil, pickup coil consisting of 4 parallel $ 50\mu\textrm{m}$-wide loops, and solid pickup coil with flux dam. We have investigated external magnetic field dependence of the SQUID gradiometers on the magnetic field noiseproperties. Significant increase of low frequency noise with the application of static field has been observed in the case of parallel and flux dam type pickup coil above threshold field of $1.3 \mu$T. Magnetic field noise at 1 Hz measured in the magnetically shielding room was 30, 165, 480 fTcm／sup -1／Hz／sup -1/2／ for solid type and slot type and parallel loops type, respectively.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.1-6
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• 2014

Superconducting quantum interference device (SQUID) is a sensitive detector of magnetic flux signals. Up to now, the main application of SQUIDs has been measurements of magnetic flux signals in the frequency range from near DC to several MHz. Recently, cryogenic low-noise radio-frequency (RF) amplifiers based on DC SQUID are under development aiming to detect RF signals with sensitivity approaching quantum limit. In this paper, we review the recent progress of cryogenic low-noise RF amplifiers based on SQUID technology.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.70-77
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• 1994

A low noise erbium doped fiber amplifier for optical preamplification has been demonstrated. The amplifier incoporates an optical isolator in its midway to prevent decrease of population inversion at the input port due to backward traveling amplified spontaneous emission. Then, high gain and low noise can be achieved simultaneously. A small signal gain of 34dB and a noise figure of 5.5dB have been achieved. With this amplifier, we obtained a receiver sensitivity of -39.7dBm with back to back configuration and -39.3dBm with 47km normal fiber for 10$^{-9}$BER at 2.5Gbps direct modulated optical signal.

• ETRI Journal
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• v.29 no.5
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• pp.670-672
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• 2007

An ultra-wideband low-noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18-${\mu}m$ CMOS process and adopts a two-stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input-impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power-gain bandwidth product of 399.4 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.11 no.2
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• pp.101-107
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• 1986

Analysis and design procedure for the low noise amplifier design are presented. A Microwave low noise amplifier is designed and fabricated using packaged GaAs FET at the center frequency of 12GHa. The experimental results with respect to the noise figure and power gain are quite agreeable with the design specifications except that the input and output VSWR are slightly higher than the desingned.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.5
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• pp.69-76
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• 2004

In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.145-151
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• 2004

This paper presents a fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diodes and tuning rage is 5.01∼5.30 GHz with 0∼3 V control voltage. For improved phase noise performance, a LC filtering technique is adapted. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is excellent performance. Moreover phase noise is improved by 5 dB after employing the LC filter. It is the first experimental result in field of InGaP/GaAs HBT VCOs. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2012.04a
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• pp.206-207
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• 2012