• ETRI Journal
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• v.28 no.3
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• pp.355-363
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• 2006

This paper presents a low-cost RF parameter estimation technique using a new RF built-in self-test (BIST) circuit and efficient DC measurement for 4.5 to 5.5 GHz low noise amplifiers (LNAs). The BIST circuit measures gain, noise figure, input impedance, and input return loss for an LNA. The BIST circuit is designed using $0.18\;{\mu}m$ SiGe technology. The test technique utilizes input impedance matching and output DC voltage measurements. The technique is simple and inexpensive.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.435-438
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• 2002

A design of Ku-band(11.7~12.20Hz) monolithic microwave integrated circuit(MMIC) low noise block(LNB) downconverter using self oscillating mixer (SOM) for direct broadcast satellite(DBS) application is presented The proposed LNB downconverter is composed of low noise amplifier(LNA), image reject filter(IRF), SOM , low pass filter(LPF). The conversion gain is 30dB , VSn is less than 1.7: 1 and overall noise figure is less than 1.2dB.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2021.10a
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• pp.630-633
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• 2021

Microphones can convert received voice signals to electric signals. They have been widely used in various industries such as radios, smart devices and vehicles. Recently, the demands for small size and high sensitive microphones are increased according to the minimization of wireless earphone with the development of smart phone. A MEMS system is a good candidate for an ultra-small size microphone of a next generation and a read out IC for high sensitive MEMS sensor is researched from many industries and academies. Since the microphone system has a high sensitivity from environment noise and electric system noise, the system requires a low noise power supply and some low noise design techniques. In this paper, a low noise LDO is presented for small size MEMS microphone systems. The input supply voltage of the LDO is 1.5-3.6V, and the output voltage is 1.3V. Then, it can support to 5mA in the light load condition. The integrated output noise of proposed LDO form 20Hz to 20kHz is about 1.9uV. These post layout simulation results are performed with TSMC 0.18um CMOS technology and the size of layout is 325㎛ × 165㎛.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.19 no.1
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• pp.3-9
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• 2009

This paper presents the reduction of acoustic noise generated by electromagnetic force in an induction motor of the electrical forklift. After summarizing the electromagnetic excitation forces due to the interaction between the stator/rotor slot permeance and the stator winding magnetomotive force, the effects of the electromagnetic force on the noise and vibration of an induction motor are analyzed. In order to experimentally identify the noise sources of the motor, the signal analyses for noise and vibration are performed by using waterfall plots of noise and vibration spectrums. It is found that severe noise and vibration are caused by the electromagnetic force when the mode number of the excitation shape for a stator is low. Furthermore, it is verified that the motor noise is amplified if the excitation frequency of the electromagnetic force coincides with one of the natural frequencies of the stator. It is experimentally demonstrated that this severe noise can be considerably reduced by structure modifications. Finally, some design guidelines are suggested to develop an induction motor with a low level of noise.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.269-274
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• 2004

The aims of this study were to Investigate the floor impact noise isolation performance of floating floor with isolation materials and propose the improvement direction of floor impact noise measurement method and evaluation classes using impact ball. Reduction of light-weight impact sound pressure level can be achieved by the finishing materials, such as vinyl finishing material and wooden flooring with isolation materials. Floor impact noise Isolation material which satisfy the properties of the floor impact noise isolation materials cause resonance in the low frequency band and worsen heavy-weight impact sound pressure level. Heavy-weight impact sound level can be reduced by using noise reduction flooring, ceiling and increase of slab thickness. Strong impact force in low frequency bang below 63Hz of bang machine is not similar to human impact source and causes some problem in evaluating heavy-weight impact noise but heavy-weight impact noise measurement and evolution using impact ball which is very similar to human impact is more reliable than bang machine. Correction value on the background noise and sensitivity of residents should be considered on the floor impact noise evaluation classes.

• Journal of electromagnetic engineering and science
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• v.5 no.3
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• pp.112-116
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• 2005

This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.426-432
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• 2012

A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.8 s.101
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• pp.924-930
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• 2005

Sound absorptive materials have good performance in high frequency range, not at low frequencies. Therefore it has been great challenge to develop a sound absorbing structure that is good at low frequency. We propose to use a Helmholtz resonator array panel for this purpose. A Helmholtz resonator is one of noise control elements widely used in many practical applications. The resonator is a simple structure composed of a rigid-walled cavity with a neck, but it has very high performance at resonance frequency. This paper discusses the sound absorption of Helmholtz resonator array panels at normal and random incidence. First, various experimental results are introduced and studied. Secondly, we theoretically predict the absorptive characteristics of the resonator away panel. The theoretical approach is based on the Fourier analysis for a periodic absorber. We believe that this method can be used to design a panel for low frequency noise control.

• Journal of KSNVE
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• v.9 no.6
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• pp.1123-1130
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• 1999

A system which is composed of a membrane and an air cavity is studied. To analyze the low frequency characteristics of a single membrane-cavity system, a plane wave model is derived. The relations among system variables, such as tension, density and stiffness, are investigated. Absorption coefficient has a maximum value at a peak frequency. In addition, a membrane-cavity system absorbs the low frequency noise with a band around peak frequency. This band is primarily determined by damping effect of the system. Furthermore, a multiple membrane-cavity system is investigated by using the transfer matrix method. To show the practical applicability of the proposed model, extensive experiments were conducted. Results show that a multiple membrane-cavity system can have broader noise reduction in the low frequency range than single.

• ETRI Journal
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• v.33 no.3
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• pp.462-465
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• 2011

A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 ${\mu}m$ standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point ($P_{1dB}$) increase by 4.85 dBm and 4 dBm, respectively, without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 6.25 dBm IIP3.