• 제목/요약/키워드: Low melting temperature

검색결과 450건 처리시간 0.026초

저온 및 고전류밀도 조건에서 전기도금된 구리 박막 간의 열-압착 직접 접합 (Thermal Compression of Copper-to-Copper Direct Bonding by Copper films Electrodeposited at Low Temperature and High Current Density)

  • 이채린;이진현;박기문;유봉영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.102-102
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    • 2018
  • Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

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사출금형코어 및 성형수지 변화에 따른 두께 방향 수축률에 관한 연구 (A Study on The Thickness Shrinkage of Injection Molded Parts with The Variation of Injection Mold Core and Molding Materials)

  • 신성현;정의철;김미애;채보혜;손정언;김상윤;윤경환;이성희
    • Design & Manufacturing
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    • 제13권2호
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    • pp.17-21
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    • 2019
  • In this study, selective laser sintered 3D printing mold core and metal core were used to investigate the difference of the thickness shrinkage from the gate of the injection molded part at a constant interval. SLS 3D printing mold core was made of nylon-based PA2200 powder and the metal core was manufactured by conventional machining method. As the PA2200 powder material has low strength, thermal conductivity and high specific heat characteristics compared with metal, molding conditions were set with the consideration of molten temperature and injection pressure. Crystalline resin(PP) and amorphous resin(PS) with low melting temperature and viscosity were selected for the injection molding experiment. Cooling time for processing condition was selected by checking the temperature change of the cores with a cavity temperature sensor. The cooling time of the 3D printing core was required a longer time than that of the metal core. The thickness shrinkage of the molded part compared to the core depth was measured from the gate by a constant interval. It was shown that the thickness shrinkage of the 3D printing core was 2.02 ~ 4.34% larger than that of metal core. In additions, in the case of metal core, thickness shrinkage was increased with distance from the gate, on the contrary, in the case of polymer core showed reversed aspect.

태양(太陽)에너지의 직접흡수식(直接吸收式) 수열판상(受熱板上)의 유체유동특성(流體流動特性)에 관(關)한 연구(硏究) (A Study on Characteristics of Fluid Flow on Direct Absorption Receiver from Solar Energy)

  • 박이동
    • 태양에너지
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    • 제4권2호
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    • pp.13-28
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    • 1984
  • Direct Absorption Receiver and Thermal Storage System is a complex problem. This paper describes only characteristic of fluid flow on the receiver. The fluid thicknesses of Molten Salts (Melting Point : $397^{\circ}C$) flowing on the receiver of modified protopype ($10m{\times}10m$) were calculated theorectically, changing the receiver slope from 60 degree to 85 degree (5 steps). The receiver temperatures were $430^{\circ}C$ at the top part and $950^{\circ}C$ at the low part. The flow thickness of the Molten Salts at the top part of the receiver are around 1.9mm in the case of maximum insolution ($50{\times}10^6$juoule/sec; 58.898kg/sec of flow rate) and 2.0mm at the low part. In the case of 3/10 of maximum insolation (flow rate = 17.669kg/sec) the flow thickness at the top part are around 0.9mm and 0.4mm at the low part, and in the case of 1/10 of maximum insolation (flow rate = 5.889 kg/see) the flow thickness at the top part are around 0.6mm and 0.3mm at the low part. From experimental measurements of a normal fresh water thickness flowing on the model plate ($12.7cm{\times}111.76cm$), around 0.8mm at the top part of the plate and around 0.7mm at the low part were obtained in the case of maximum insolation (flow rate = 0.12496 kg/see). In the case of 3/10 (flow rate = 0.03748 kg/see) and 1/10 (flow rate = 0.012496 kg/see) of maximum insolation, around 0.5mm and 0.4mm at the top part, and around 0.3mm and 0.2mm at the low part were obtained respectively. The reason why the thickness of the Molten Salts increase at the low part of the receiver only in case of maximum insolation is that decreasing rate of the viscosity of the Molten Salts is larger than decreasing rate of the density of the Molten Salts during temperature increase from the top to the low receiver plate and decrease of the fluid velocity in accordance with continuity principle. In all cases without the above maximum insolation, the thickness of the Molten Salts and the fresh water decreased at the low part of the plate because of gravity force effects rather than friction effects and of continuity principle. All simillar flow patterns were obtained through all cases of the insolation making an exception of only maximum insolation.

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Sol-Gel법에 의한 Li2O-Al2O3-SiO2계 괴상겔 및 결정화유리의 합성 (Synthesis of Monolithic Gel to Bulk glass-Ceramic in Multicomponent Li2O-Al2O3-SiO2 System)

  • 양중식;작화제부
    • 한국세라믹학회지
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    • 제25권5호
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    • pp.541-551
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    • 1988
  • The purpose of this investigation was to prepare multicomponent monolithic Li-Al-Si gels of composition(mol%) 16.67 Li2O-16.67 Al2O3-66.67 SiO2 and to convert the gels to monolithic glass-ceramic at low temperature without melting. The hydrolysis, DTA, TGA, TMA, SEM, pore distribution, density and the activation energy for crystallization of the glass-ceramic formation with rawmaterials of which tetraethl orhosilicate of networkforming cation(Si) is partially hydrolyzed, aluminum isoproxide and lithium methoxide prepared by Li-metal react with methanol were studied. The results were as follows : 1) Monolithic gels which were added with additional water, resulting in a total water content 2.5 to 3.0 times the stoichiometric amount required to fully hydrolyze the alkoxides. 2) Specimens were dried to form crylinders 60mm in length and 40mm in diameter in about 800 hrs at 5$0^{\circ}C$. 3) $\beta$-eucryptite crystals and $\beta$-spodumene crystals were detected in samples heated above 75$0^{\circ}C$. 4) Within the temperature and range of 25-50$0^{\circ}C$ and 1,00$0^{\circ}C$ the thermal expansion coefficient for crystallized samples were shown as 2.6-5.7$\times$10-7/$^{\circ}C$ and 7.4-12.5$\times$10-7/$^{\circ}C$, respectively. 5) The activation energy for the crystal growth was 11.01kcal/mol at 794$^{\circ}C$ to 85$0^{\circ}C$.

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폐 패각과 정유 폐촉매를 사용한 Tricalcium Aluminate 클링커의 합성에 관한 연구 (Study on the Synthesis of Tricalcium Aluminate Clinker from Waste Shell and Spent Oil-Refining Catalyst)

  • 이건호;송태웅
    • 한국세라믹학회지
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    • 제41권12호
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    • pp.933-938
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    • 2004
  • [ $3CaO{\cdot}Al_{2}O_3$ ] 클링커 제조 원료로서의 굴 패각과 정유 폐 촉매의 사용 가능성과 이들 조합물의 클링커 소성성 및 광물 생성거동을 광물상과 미구조 관찰을 중심으로 확인하였다. 굴 패각에 함유된 불순물은 클링커의 합성에 영향을 미치지 않았고 이들 조합물은 비교적 저온에서 $12CaO{\cdot}7Al_{2}O_3$를 생성한 후 다시 CaO와의 반응으로 $3CaO{\cdot}Al_{2}O_3$를 생성하므로 $1400^{\circ}C$에서의 1회 소성으로 클링커 합성이 가능하였다. 그 이상의 온도에서는 분해용융이 진행되었으며 동일한 소성 조건에서 알루미나원으로 수산화알루미늄을 사용할 경우에는 $3CaO{\cdot}Al_{2}O_3$의 생성이 완료되기 전에 용융되어 클링커의 합성이 불가능하였다.

$Li_2O-Al_2O_3-SiO_2$계 소지내에 Zircon상 형성에 따른 내열 강화 특성 (A Study on the Thermal Resistance Strength with the Formation of the Zircon Phase in LAS System)

  • 전덕일;김정욱;이응상
    • 한국세라믹학회지
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    • 제29권12호
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    • pp.935-941
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    • 1992
  • The LAS system with good thermal properties has a narrow range of firing and sintering temperature near the melting point. So it is difficult to sinter LAS to dense sintered body. In this study, the petalite (Li2O.Al2O3.8SiO2) with good thermal properties, was taken as a base composition, and zironia was added in this composition to broaden the firing range, increase the mechanical strength, and control the thermal expansion. The thermal and mechanical properties were investigated. The results are as follows; 1. Zirconia phase was formed in LAS matrix and apparent porosity was decreased from 0.9% to 0.5%, and the mechanical strength was kincreased from 112 MPa to 190 MPa, by the densification of body. 2. The composition Li2O.Al2O3.8SiO2 has a negative thermal expansion, but the thermal expansion was changed from negative to positive with the densification and the increase of amount of synthesized zircon phase which had positive thermal expansion. The coefficient of thermal expansion, with the increase of the amount of additives, was low as -0.74~9.06$\times$10-7/$^{\circ}C$ in 20~$600^{\circ}C$, and 7.95~20.13$\times$10-7/$^{\circ}C$ in 20~80$0^{\circ}C$. 3. The mechanical strength of LZ15 (added with ZrO2.SiO2 15 wt%) composition thermal-shocked was stable in the temperature range of 0~$600^{\circ}C$, but rapidly decreased due to the increase of thermal expansion above $600^{\circ}C$.

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세라믹 매트릭스 복합재료 연구 개발 동향 및 전망 (Review of the Research and Development of Ceramic Matrix Composite Materials and Future Works)

  • 이태호
    • Composites Research
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    • 제27권4호
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    • pp.123-129
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    • 2014
  • 세라믹 기지 복합재료는 세라믹 기지에 고 용융 온도, 낮은 밀도, 고 탄성과 강도를 가진 탄화물, 질화물, 보론화물, 산화물 등의 강화재료를 끼워 넣어 파괴 인성을 높인 것이다. 이들 소재는 우주 비행체의 열 차폐 시스템, 또 고온의 가스 터빈의 연소실, 터빈 블레이드, 고정자(Stator) 베인 등의 부품에 사용되며, 버너와 화염 유지기(Flame holder), 고온 가스 덕트에는 산화 CMC가 사용되고 있고, 극심한 열 충격이 일어나는 브레이크 디스크나 시스템의 부품, 그리고 슬라이드 베어링 부품에도 활용되고 있다. 이러한 CMC에 대한 연구 개발은 미국의 우주 비행체 활용 목적을 비롯하여, 미국, 일본, 유럽에서의 초고속항공기와 가스 터빈용, 그리고 핵 융합용 등의 목적으로 국방과 에너지 산업과 같은 전략적 분야의 활용을 목표로 개발되고 있다.

Synthesis and Characterization of banana-shaped achiral molecules

  • Lee, Chong-Kwang;Lee, Chong-Kwang;Kwon, Soon-Sik;Kim, Tae-Sung;Shin, Sung-Tae;Choi, Suk;Choi, E-Joon;Kim, Sea-Yun;Kim, Jae-Hoon;Zin, Wang-Choel;Kim, Dae-Cheol;Chien, Liang-Chy
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.504-508
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    • 2003
  • New banana-shaped achiral compounds, 4-chloro-1,3-phenylene bis [4-4(3-fluoro-9-alkenyloxy) phenyl-iminomethylbenzoate]s and 4-chloro-1,3-phenylene bis [4-4-(3-fluoro-10-alkanyloxy) phenyliminomethyl benzoate]s were synthesized by varying the substituent (X=H, F, or Cl); their electrooptical properties are described. The smectic phases, including a switchable chiral smectic C ($SmC^{\ast}$) phase, were characterized by differential scanning calorimetry, polarizing optical microscopy, and triangular method. The presence of vinyl end group at the terminals of linear side wings in the banana-shaped molecules induced a decrease in melting temperature. The smectic phase having the undecenyloxy group such $as-(CH_2)_9CH=CH_2$ showed ferroelectric switching, and its value of spontaneous polarization on reversal of an applied electric field was 2250 $nC/cm^2$, while the value of spontaneous polarization of the smectic phase having the decanyloxy group such as $-(CH2)_9CH_3$ was 3700 $nC/cm^2$. We could obtain the ferroelectric phase with low isotropic temperature by varying the end group at the terminals of linear side wings in the banana-shaped achiral molecules.

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수산화암모늄나이트레이트(HAN)의 습식합성 및 이중 유기용매를 이용한 고체상 추출 (Wet Synthesis of Hydroxylammonium Nitrate (HAN) and Solid Phase Extraction Using Dual Organic Solvents)

  • 김소희;권윤자;전종기;조영민
    • 공업화학
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    • 제31권3호
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    • pp.317-322
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    • 2020
  • 수산화암모늄나이트레이트(HAN; NH3OHNO3)는 낮은 용융점과 증기압의 특성을 가지고 있고, 상대적으로 높은 산소균형을 이루고 있는 이온성 화합물이다. 본 연구에서는 높은 함량의 액상추진제를 제조하기 위한 산화제로 활용하기 위하여 이중용매를 적용하여 고체입자상으로 얻었다. 감압 하에서 액상의 HAN으로부터 수분을 증발시킨 후, 반용매로서 아세톤과 에탄올을 적용하여 추출한 입자상의 HAN에는 13.8 wt%의 수분이 포함되어 있었다. 아세톤을 단독으로 적용하였을 때, 합성수율은 질량기준으로 최대 88%이었고, TGA로 측정된 최대 함량은 86.2%, 분해온도는 160~205℃ 범위로 나타났다.

방전 플라즈마 소결법으로 제조된 silicon boride 세라믹스의 열전 특성 (Thermoelectric characteristics of the spark plasma-sintered silicon boride ceramics)

  • 심승환;이대웅;채재홍;;심광보
    • 한국결정성장학회지
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    • 제15권2호
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    • pp.75-78
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    • 2005
  • 본 연구에서는 고온 융점과 높은 Seebeck 계수로 인해 고온 열전 재료로서 매우 우수한 silicon boride ($SiB_6$)의 고밀도 소결체를 방전 플라즈마 소결법(spark plasma sintering, SPS)을 도입하여 제조하였으며, 소결된 시편의 미세구조 및 열전 특성을 평가하였다. $1500^{\circ}C$의 비교적 저온에서 이론 밀도의 약 99%의 소결밀도로 SPS법을 통해 효과적으로 $SiB_6$를 치밀화 할 수 있었으며 이들 시편들의 열전특성 평가로부터, hot-press법으로 제조된 시편과 비교하여 매우 향상된 Seebeck 계수를 얻을 수 있었으며 상대적으로 높은 출력인자 값을 나타냈다.