• Journal of Welding and Joining
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• v.18 no.2
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• pp.213-213
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• 2000

This study was performed to investigate types and formation mechanism of cracks in two Al alloy welds, A5083 and A7NO1 spot-welded by pulse Nd: YAG laser, using SEM, EPMA and Micro-XRD. In the weld zone, three types of crack were observed: center line crack($C_{C}$), diagonal crack($C_{D}$), and U shape crack($C_{U}$). Also, HAZ crack($C_{H}$), was observed in the HAZ region, furthermore, mixing crack($C_{M}$), consisting of diagonal crack and HAZ crack was observed.White film was formed at the hot crack region in the fractured surface after it was immersed to 10%NaOH water. In the case of A5083 alloy, white films in C crack and $C_D crack region were composed of low melting phases, Fe₂Si$Al_8$ and eutectic phases, Mg₂Al₃ and Mg₂Si. Such films observed near HAZ crack were also consist of eutectic Mg₂Al₃. In the case of A7N01 alloy, eutectic phases of CuAl₂, $Mg_{32}$ (Al,Zn) ₃, MgZn₂, Al₂CuMg and Mg₂Si were observed in the whitely etched films near $C_{C}$ crack and $C_{D}$ crack regions. The formation of liquid films was due to the segregation of Mg, Si, Fe in the case of A5083 alloy and Zn, Mg, Cu, Si in the case of A7N01 aooly, respectively.The $C_{D}$ and $C_{C}$ cracks were regarded as a result of the occurrence of tensile strain during the welding process. The formation of $C_{M}$ crack is likely to be due to the presence of liquid film at the grain boundary near the fusion line in the base metal as well as in the weld fusion zone during solidification. The $C_{U}$ crack is considered a result of the collapsed keyhole through incomplete closure during rapid solidification. (Received October 7, 1999)

• Journal of the Korean Society for Heat Treatment
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• v.29 no.1
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• pp.1-7
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• 2016

Titanium and its alloys can be usually joined with brazing method. And the alloys should be brazed at low temperature to keep their original microstructure. In this study, the mechanical strength and microstructure of the CP-Ti joint-brazed with $Zr_{54}Ti_{22}Ni_{16}Cu_8$ filler metal having melting temperature of $774{\sim}783^{\circ}C$ were investigated. The tensile strengths of the joint-brazed at $800^{\circ}C$ with $100^{\circ}C/min$ of cooling rate showed more than 400 MPa which was as high as base metal. The $Widmanst{\ddot{a}}tten$ structure consisting of Ti and $Ti_2Ni$ phase was observed in the joint area. However, the tensile strengths of the joint-brazed at $800^{\circ}C$ with $15^{\circ}C/min$ of cooling rate were decreased and the Ti, $(Ti,Zr)_2Ni$ and $Ti_2Ni$ phases were observed at the joint area. It is believed that the $(Ti,Zr)_2Ni$ laves phases could decrease the mechanical strength of the joint and the cooling rate should be controled to get high strength of the titanium joint.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• Journal of Welding and Joining
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• v.29 no.1
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• pp.80-84
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• 2011

The weight reduction of the transportations has become an important technical subject Al and Al alloys, especially Al 5052 alloys have been being applied as door materials for automobile. One of the most widely known car weight-reduction methods is to use light and corrosion-resistant aluminum alloys. However, because of high electrical and thermal conductivity and a low melting point, it is difficult to obtain good weld quality when working with the aluminum alloys. Also, Pulse MIG welding is the typical aluminum welding process, but it is difficult to apply to the thin plate, because of melt-through and humping-bead. In order to enhance weld quality, welding parameters should be considered in optimizing the welding process. In this experiment, Al 5052 sheets were used as specimens, and these materials were welded by adopting new Cold Metal Transfer (CMT) pulse process. The proper welding conditions such as welding current, welding speed, torch angle $50^{\circ}$ and gap 0~1mm are determined by tensile test and bead shape. Through this study, range of welding current are confirmed from 100A to 120A. And, the range of welding speed is confirmed from 1.2m/min to 1.5m/min.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Journal of Yeungnam Medical Science
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• v.8 no.2
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• pp.114-120
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• 1991

In electron therapy, low melting point alloy is used for shaping of the field. Electron field shaping material affect the output factor as well as the collimator system. The output factors of electron beams for shaped fields from NELAC-1018 were measured using ionization chamber of Farmer type in water phantom. The output factors of electron beams depend on the incident energy, inherent collimator system and the size of shaped field. Obtained results were followings. 1. In the smaller applicator, output varied extremely according to extent of collimator opening. 2. The higher energy, the output is less varied according to treatment field at small field.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.936-936
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• 2006

Bulk amorphous materials have been intensively studied to apply for various advanced industry fields due to their high mechanical, chemical and electrical properties. These materials have been produced by several techniques such as mechanical alloying, melt spinning and gas atomization, etc. Among them, the atomization is the most potential technique for commercialization due to high cooling rate during solidification of the melt and mass productivity. However, the amorphous powders still have some limitations because of their low ductility and toughness. Therefore, intensive efforts have to be carried out to increase the ductility and toughness. In this study, the Ni-based amorphous powder was produced by the gas atomization process. And in order to increase the ductile toughness, ductile Cu phase was coated on the Ni amorphous powder by spray drying process. The characteristics of the as-synthesis powders have been examined and briefly mentioned. The master alloy with $Ni_{57}Zr_{20}Ti_{16}Si_2Sn_3$ was prepared by vacuum induction melting furnace with graphite crucible and mold. The atomization was conducted at $1450^{\circ}C$ under the vacuum of $10^{-2}$ torr. The gas pressure during atomization was varied from 35 to 50 bars. After making the Ni amorphous powders, the spray drying was processed to produce the Cu -coated Ni amorphous composite powder. The amorphous powder and Cu nitrate solution were mixed together with a small amount of binder and then it was sprayed at temperature of $130^{\circ}C$ and rotating speed of 15,000 R.P.M.

• The Journal of Korean Society for Radiation Therapy
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• v.7 no.1
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• pp.32-44
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• 1995

I. 제 목 고에너지 X-선 소조사야의 선량분포 및 계측에 관한 연구 II. 연구의 목적 및 중요성 최근 수술이 어려운 뇌종양등에 대한 방사선수술법(Radiosurgery)이 관심의 대상이 되고 있다. 방사선수술법은 크게 나누어 200여개의 Co-60이 장착된 장치(Gamma Knife)를 이용하는 방법과, X-선치료기를 이용하는 방법은 몇개의 보조기구를 설치하면 가능한 매우 경제적인 방법이다. 따라서 Microtron을 이용한 방사선수술의 기초자료확보를 위하여 소조사야에 대한 선량과 선량분포의 측정 및 계산을 실시하였다. III. 연구의 내용 및 범위 Microtron으로부터 조사되는 6MV, 10MV, 21MV X-선의 지름 3cm이하 소조사야에 대한 정확한 선량 및 선량분포 자료를 확보하기 위해, 가. Microtron치료기와 보조장치등에 대한 정밀도 계측 및 평가 나. 보조 Collimator의 적당한 크기와 재료의 선택 및 설계, 제작. 다. 에너지와 조사야 크기 각각에 대한 여러측정장치(Ion chamber, Diode detector, TLD 및 Film등)를 이용한 선량 및 선량분포 측정. 라. 측정값들의 비교, 검토 및 측정된 자료에 의한 선량 및 선량분포의 계산을 수행했다. IV. 연구결과 및 활용에 대한 건의 본 연구에서 얻은 결과는 다음과 같다. 가. Microtron치료기와 보조장치등의 정확도의 허용 오차범위내에서 잘 일치하였다. 나. 보조 collimater adpator는 총 길이 24cm로 하였으며 재질로는 두랄미늄을 사용하였고, 보조 collimator는 low melting alloy를 사용하였으며 소조사야 크기의 정확도는 0.5mm이내에서 매우 잘 일치 하였다. 다. 방사선 수술법의 에너지 선택에 중요한 요소중의 하나인 penumbra는 6MV X-선에서 가장 적게 나타났으며 라. 소조사면에 대한 깊이-선량 백분율곡선은 모든 에너지에서 조사면이 작아질수록 표면으로 이동하는 경향을 보였다. 이상의 결과로부터 방사선 수술을 시행할 경우 수십억원에 이르는 장비의 도입이나 새로운 시설 없이 Microtron에서 조사되는 고에너지 X-선을 이용할 수 있을 것으로 사료된다. 또한 새로 구입한 측정기나 보조 Collimator를 이용하여 소조사야에 대한 선량측정기술을 습득함으로써 일반적인 소조사야의 방사선치료나 회전치료등에 활용할 수 있다.