• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.265.2-265.2
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• 2016

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below $300^{\circ}C$. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by Ebata. et. al. showed a amazing field effect mobility of $39.1cm^2/Vs$. The reason having high field effect mobility of IGO TFTs is because $In_2O_3$ has a bixbyite structure in which linear chains of edge sharing InO6 octahedral are isotropic. In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure ($O_2/(Ar+O_2)$, $Po_2$)ratios. IGO thin film Varies depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the $Po_2$ increased from 1% to 10%. At $Po_2$ was 5%, IGO TFTs showed a high drain current on/off ratio of ${\sim}10^8$, a field-effect mobility of $84cm^2/Vs$, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

• Journal of Information Display
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• 제2권3호
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• 한국통신학회논문지
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• 제29권3A호
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• pp.324-330
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• 2004

본 논문에서는 STBC (space tine block codes)의 채널 정보를 이용하여 TCM(Trellis Coded Modulation) 복호기의 연산량을 감소시키는 복호 방법을 제안하였고 이를 하드웨어로 설계 및 검증한 결과를 제시한다. 제안한 방법은 바이어스 포인트 설정을 이용하여 부집합에 n개의 시그널 포인트가 존재할 경우 실제 TCM 복호기에서 연산되는 가지 값을 부집합에서 1개의 시그널 포인트만 필요로 한다. 그러므로 바이어스 포인트 설정을 사용하여 가장 가까운 시그널 포인트를 미리 찾아내어 연산량을 l/n로 줄일 수 있다. 16QAM 8subset 경우에 AED (absolute euclidean distance)연산을 하게 되면 곱셈은 37％, 가감산 41％, 비교는 25％의 연산량 감소 효과가 있다. 또한 본 논문에서는 제안된 STBC와 TCM이 결합된 복호기의 하드웨어 합성 결과를 제시한다. 논리 합성 결과 약 87.6K개의 게이트가 요구됨을 확인하였다.

• 전력전자학회논문지
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• 제20권3호
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• pp.214-222
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• 2015

The superiority of gallium nitride FET (GaN FET) over silicon MOSFET is examined in this paper. One of the outstanding features of GaN FET is low reverse-recovery charge, which enables continuous conduction mode operation of totem-pole bridgeless boost power factor correction (PFC) circuit. Among many bridgeless topologies, totem-pole bridgeless shows high efficiency and low conducted electromagnetic interference performance, with low cost and simple control scheme. The operation principle, control scheme, and circuit implementation of the proposed topology are provided. The converter is driven in two-module interleaved topology to operate at a power level of 5.5 kW, whereas phase-shedding control is adopted for light load efficiency improvement. Negative bias circuit is used in gate drivers to avoid the shoot-through induced by high speed switching. The superiority of GaN FET is verified by constructing a 5.5 kW prototype of two-module interleaved totem-pole bridgeless boost PFC converter. The experiment results show the highest efficiency of 98.7% at 1.6 kW load and an efficiency of 97.7% at the rated load.

• 대한전자공학회논문지TE
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• 제39권4호
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• pp.409-412
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• 2002

IMT-2000 전 대역(1920∼2170MHz, BW=250MHz)에서 사용되는 중계기용 2단 저잡음 증폭기를 설계하였다. Ansoft사의 Serenade를 이용하여 첫째 단 PHEMT의 소스와 접지간 source lead의 인덕턴스 값을 최적화하여 기판 선고로 등가화하고, 첫째 단의 잡음 정합은 물론 각 단의 정합회로가 간단하도록 high pass 구조로 설계하였다. 바이어스 회로는 단일 능동회로로 구성하였고, 인가전압은 8V, 총 전류는 180mA이다. 이때, 첫째 단 PHEMT의 Vgs = -0.4V, Vds = 4V이고, 둘째 단 AH1의 Vds = 5V이다. 상업화가 가능하도록 설계 기준을 정하여 제작되었고, 측정 결과 이득은 20dB, NF는 1dB, 입력 VSWR은 1.14∼l.3dB, P1dB는 22.4dBm, gain flatness는 ±0.45dB로 상업용 저잡음 증폭기로 사용될 수 있다.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.48-51
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• 2009

20 GHz 이하의 주파수 범위에서 저잡음 증폭기의 성능지수를 최대화하기 위해 65 nm RF CMOS 기술을 이용하여 제작된 입력 트랜지스터의 바이어스 전압과 폭을 최적화하였다. 만일 13 GHz 보다 동작 주파수가 높을 경우, 보다 높은 이득을 확보하기 위해 2단 증폭기의 적용이 필요하였다. 또한 5 GHz 보다 낮을 경우, 제한된 범위 내에서의 전력소모를 제어하기 위해, 입력 트랜지스터의 게이트와 소스사이의 추가적인 커패시터를 삽입하였다. 본 논문은 20 GHz 이하에서 동작하는 1단 LNA의 전반적인 성능을 검토하였고, 본 접근법은 다른 CMOS LNA 설계 기술에 적용가능하다.

• ETRI Journal
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• 제24권4호
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.433-433
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• 2016

Carbon nanotubes (CNT) emitter has widely become an attractive mechanism that draws growing interests for cold cathode field emission. CNT yarns have demonstrated its potential as excellent field emitters. It was demonstrated that a small focal spot size was achieved by manipulating some electrical parameters, such as applied bias voltage at the mesh gate, and electrostatic focal lenses, geometrical parameters, such as axial distances of the anode, and the electrostatic focal lens from the cathode assembly, and the dimension of the opening of the electrostatic lens. Electrical-optics software was used to systematically investigate the behavior of the electron beam trajectory when the aforementioned variables were manipulated. The results of the experiment agree with the theoretical simulation results. Each variable has an individual effect on the electron beam focal spot size impinging on the target anode. An optimum condition of the parameters was obtained producing good quality of X-ray images. Also, MWCNT yarn was investigated for field emission characteristics and its contribution in the X-ray generation. The dry spinning method was used to fabricate MWCNT yarn from super MWCNTs, which was fabricated by MW-PECVD. The MWCNT yarn has a significant field emission capability in both diode and the triode X-ray generation structure compared to a MWCNT. The low-voltage-field emission of the MWCNT yarn can be attributed to the field enhancing effect of the yarn due to its shape and the contribution of the high-aspect-ratio nanotubes that protrude from the sides of the yarn. Observations of the use of filters on the development of X-ray images were also demonstrated. The amount of exposure time of the samples to the X-ray was also manipulated. The MWCNT yarn can be a good candidate for use in the low voltage field emission application of X-ray imaging.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.600-603
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• 2008

본 논문은 액정 표시 소자 (liquid crystal display, LCD)의 저소비 전력을 위한 새로운 메모리-인-픽셀 회로 설계를 제안한다. 각 픽셀 (화소)이 한 개의 메모리를 가지고 있기 때문에 이러한 회로는LCD동작을 위해 게이트와 소스 구동 회로의 동작 없이도 메모리에 저장된 데이터를 이용하여 8컬러를 표현할 수 있다. 즉 구동 회로의 동작 없이도 각 화소에 내장된 메모리를 이용하여 데이터를 표현할 수 있기 때문에 LCD패널의 소비전력을 줄일 수 있다. 각 메모리 회로는 각 화소에 내장된 수정된 S-R플립플롭(NAND형)으로 구성되어 있고, 플립플롭은 겹치지 않는 클럭 CLK_A와 CLK_B를 이용하여 교류 바이어스를 공급한다. NAND형은 인버터형 메모리에 비해 회로는 더 복잡하지만, 약 50%의 더 낮은 소비전력 특성을 가진다. $96{\times}128$의 해상도를 가진 LCD패널에 대해 인버터형 메모리가 0.037 mW의 소비전력을 보인 반면 제안된 메모리 회로는 단지 0.007mW의 우수한 소비전력을 보였다.