• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1115-1121
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• 2008

In this paper, dielectric slab loaded cylindrical cavity resonator measurement technique is presented to determine the dielectric constant of a dielectric material. The dielectric constant is measured by the resonant frequency deviation of empty and dielectric slab loaded cavity. Characteristic equations are derived by th exact field analysis. The measurement configurations are formed using HP8719A vector network analyzer and an experimental cylindrical metallic cavity with circular cross-section. The validity of the theory is confirmed by experiments and CST MWS 4.0(3D simulator). The results were in the whole satisfactory. The measured dielectric constant of teflon and bakelite are 2.03 and 4.44, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.290-296
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• 2009

$Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1081-1084
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• 2003

Structural morphology, annealing behavior and dielectric properties of polyaniline-emeraldine base (Pani-EB) and poly methyl methacrylate (PMMA) thin films prepared by spin coating technique have been studied. MIM and MISM structures were used to investigate annealing and dielectric behavior. The XRD and AFM spectrum of as grown and annealed thin films indicates the amorphous nature. The observed amorphous phase, low loss, dielectric behavior and thermal stability even at high temperatures implies the feasibility of utilizing PMMA and Pani-EB thin films as gate dielectric insulator layer in organic thin film transistors which can find application in flat panel display.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.1
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• pp.17-24
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• 2014

In this paper, we analysed coupling coefficient between dielectric resonator of high dielectric constant and microstrip line to design for low phase noise dielectric resonator by direct coupling. Also we analysed phase noise of dielectric resonance oscillator with parallel feedback circuit to complement Q by high dielectric constant. We obtained a result from high-stability dielectric oscillator which is optimum designed through analysis of dielectric resonance oscillator phase noise and coupling coefficient. The result is that the phase noise was -83.3dBc/Hz@1KHz at 20.25GHz when we used about 3.6 coupling coefficient and ${\epsilon}_r$=30 dielectric resonator of 20.25GHz dielectric resonance oscillator. As a result, we suggested the direct-connect design method by frequency multiplication mode to prevent phase noise loss at K-Band.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.147-151
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• 1994

In order to investigate the dielectric characteristic insulating oil is chosen insulating oil for electric cable, and experiment is performed in the temperature range of 30∼120[$^{\circ}C$] and frequency range of 30∼1${\times}$10$\^$6/[㎐]. As a result, the observed linear decrease in tan $\delta$ value at the low frequency range is due to the influence of frequency, whereas the increase in tan $\delta$ value at high frequency range is contributed by the electrode's resistance and dielectric loss. The dipole moment and activation energy of specimen are obtained 1.22(debye) and 12.75∼18.66[㎉/㏖e] of high temperature region, 15.68 ∼ 20.6[㎉/㏖e] of low temperature region respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.251-255
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• 2007

We made $(1-x)BCB-xBNT(BaNd_2Ti_4O_{12})$ (x=20, 30, 40, 50 vol%) composite thick film with a high dielectric constant and low loss by the hand casting method. Dielectric constant and dielectric loss of prepared thick film are measured at 1MHz and curing behavior of the film are observed through thermal analysis such as DSC. We investigated the effect of contents of BNT filler and curing behavior of film on dielectric properties of BCB-BNT composite. Dielectric constant increased with increasing BNT filler from 20 to 50 vol% and dielectric loss ($tan{\delta}$) decreased with increasing BNT filler. Dielectric constant and loss ($tan{\delta}$) of composite material was not nearly dependent on the curing behavior. But as a result of TCC (Temperature Characteristics of Coefficient) decreased with increasing the curing temperature, we confirmed that the curing of these composite system is most stable above $250^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.126-130
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• 2008

In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• Advances in materials Research
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• v.2 no.3
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• pp.141-153
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• 2013

Nanocrystalline Barium niobate ($BaNbO_3$) has been synthesized by a novel auto-igniting combustion technique. The X-Ray diffraction studies reveals that $BaNbO_3$ posses a cubic structure with lattice constant $a=4.071{\AA}$. Phase purity and structure of the nano powder are further examined using Fourier-Transform Infrared and Raman spectroscopy. The average particle size of the as prepared nano particles from the Transmission Electron Microscopy is 20 nm. The UV-Vis absorption spectra of the samples are recorded and the calculated average optical band gap is 3.74eV. The sample is sintered at an optimized temperature of $1425^{\circ}C$ for 2h and attained nearly 98% of the theoretical density. The morphology of the sintered pellet is studied with Scanning Electron Microscopy. The dielectric constant and loss factor of a well-sintered $BaNbO_3$ at 5MHz sample is found to be 32.92 and $8.09{\times}10^{-4}$ respectively, at room temperature. The temperature coefficient of dielectric constant was $-179pp/^{\circ}C$. The high dielectric constant, low loss and negative temperature coefficient of dielectric constant makes it a potential candidate for temperature sensitive dielectric applications.