• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.172-177
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• 2003

Effect of glass addition on the low-temperature sintering and microwave dielectric properties of $BaTi_4O_9$-based ceramics were studied to develop the materials for the functional substrate of low-temperature co-fired ceramics. When 10 wt% of glass was added, sufficient densification was obtained and the relative density more than 98% was reached at the sintering temperature of$875{\circ}C$. The microwave dielectric properties were k=32, Q＊f=9000 GHz, ${ au}_f$=10 ppm/${\circ}C$. As the amount of glass increased, phase decompositions from $BaTi_4O_9;to;BaTi_5O_{11};and;Ba_4Ti_{13}O_{30}$ was observed.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.273-278
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• 2012

$ZrB_2$ has a melting temperature of $3245^{\circ}C$ and a low density of $6.1\;g/cm^3$, which makes this a candidate for application to ultra-high temperature over $2000^{\circ}C$. Beside these properties, $ZrB_2$ has excellent resistance to thermal shock and oxidation compared with other non-oxide engineering ceramics. This paper reviewed briefly 2 research examples, which are related to densification and properties of $ZrB_2$-based ceramics for ultra-high temperature applications. In the first section, the effect of $B_4C$ addition on the densification and properties of $ZrB_2$-based ceramics is shown. $ZrB_2$-20 vol.% SiC system was selected as a basic composition and $B_4C$ or C was added to this system in some extents. With sintered bodies, densification behavior and hightemperature (up to $1400^{\circ}C$) properties such as bending strength and hardness are examined. In the second section, the effect of the SiC size on the microstructures and physical properties is shown. $ZrB_2$-SiC ceramics are fabricated by using various SiC sources in order to investigate the grain-growth inhibition and the mechanical/thermal properties of $ZrB_2$-SiC.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.412-420
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• 2019

In this study, the dielectric and polarization properties of manganese (Mn% = 0.0, 0.1, 0.2, 0.5) doped (Pb_0.93La_0.07)(Zr_0.82Ti_0.18)O₃ (PLZT 7/82/18) anti-ferroelectric ceramics were studied for energy storage capacitor and pyroelectric applications. A systematic investigation demonstrated that the electric properties of PLZT 7/82/18 ceramics are affected significantly by the Mn-doping content. A maximum dielectric constant of ~ 2,128 at 1 kHz was found for 0.1% Mn-doped PLZT ceramics with a low dielectric loss of 0.018. The bipolar polarization versus electric field (P-E) hysteresis loops were traced for all compositions showing a typical anti-ferroelectric nature. The breakdown field was found to decrease with Mn-doping. The energy storage density and efficiency were found to be 460 J/㎤ and ~ 63%, respectively, for 0.2% Mn-doped PLZT ceramics. The pyroelectric coefficient of PLZT ceramics shows an increase based on the amount of Mn-doping.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.226-230
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• 2013

We performed high pressure high temperature (HPHT) sintering for the 20 nm MgO powders at the temperatures from $600^{\circ}C$ to $1200^{\circ}C$ for only 5 min under 7 GPa pressure condition. To investigate the microstructure evolution and physical property change of the HPHT sintered MgO samples, we employed a scanning electron microscopy (SEM), density and Vickers hardness measurements. The SEM results showed that the grain size of the sintered MgO increased from 200 nm to $1.9{\mu}m$ as the sintering temperature increased. The density results showed that the sintered MgO achieved a more than 95% of the theoretical density in overall sintering temperature range. Based on Vickers hardness test, we confirmed that hardness increased as temperature increased. Our results implied that we might obtain the dense sintered MgO samples with an extremely short time and low temperature HPHT process compared to conventional electrical furnace sintering process.

• Advances in materials Research
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• v.1 no.2
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.798-801
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• 2004

In this study, in order to develop low temperature sintering ultrasonic vibrator, PCW-PMN-PZT ceramics with the amount of $Nb_2O_5$ addition were manufactured. All of the fabricated sample showed pure pervoskite structure of tetragonal phase. With increasing the amount of $Nb_2O_5$ addition, mechanical quality factor Qm were increased up to 0.2wt%$Nb_2O_5$ addition and then decreased. And also, with increasing the amount of $Nb_2O_5$ addition, grain size, kp, density and dielectric constant were linearly decreased. At the 0.2wt% $Nb_2O_5$ addition composition ceramic, kp of 0.48, Qm of 2186, ${\varepsilon}r$ of 1219 were shown, respectively. Their values were suitable for ultrasonic vibrator application.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.57-63
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• 2003

The effects of glass addition on the low-temperature sintering and microwave dielectric properties of $BaO-Nd_2O_3-TiO_2$ dielectric ceramics were studied. When 10∼13 wt% of lithium borosilicate glass was added, the sintering temperature decreased from 130$0^{\circ}C$to 850-$900^{\circ}C$relative density of more than 97% was obtained. When the sample was sintered at $850^{\circ}C$ with 10 wt% of glass, the dielectric properties of $\epsilon_r{\ge}54$, $Q{\times}f_0{\ge}2300$, and $\tau_f{\ge}+8ppm/^{\circ}C$ were obtained.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1631-1633
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• 2004

The surge current characteristics of ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3-Dy_2O_3$-based varistors were investigated with various $Dy_2O_3$ contents. The sintered density decreased in the range of $5.2{\sim}4.6g/cm^3$ with increasing $Dy_2O_3$ content. The incorporation of $Dy_2O_3$ markedly enhanced the nonlinear properties of varistors above 10 times in nonlinear exponent, compared with the varistor without $Dy_2O_3$. The varistor ceramics doped with 0.5 mol% $Dy_2O_3$ exhibited the highest electrical stability. However, the remainder varistors resulted in thermal runaway due to low density of varistor ceramics. The clamping voltage ratio exhibited a minimum value of 2.03 in 1.0 mol% $Dy_2O_3$ at surge current of 100 A(8/20 ${\mu}s$).

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.293-297
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• 2011

The thermodynamic behavior of phenolic resin was investigated to verify the relation between the properties of porous ceramics with $ZrO_2$-C system for submerged entry nozzle and the characteristics of phenolic resin with various relative humidity. The green and the sintered density were decreased between 25% and 50% relative humidity, whereas they were gradually enhanced above 50% relative humidity. The highest value of apparent porosity was 20.1% and the minimum compressive strength was 69MPa in the specimen using the powder exposed to 50% relative humidity. As a result of thermal analysis for phenolic resin, the shift of endothermic peak to low temperature and the reduction of exothermic peak were observed, and the peaks corresponded to melting and curing of phenolic resin, respectively. The melting and the curing of phenolic resin generate the change of green density, and it can affect the properties of submerged entry nozzle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.238-243
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• 2002

The dielectric properties and synthesis of $LaAIO_3$ ceramics from mixtures of $La_2O_3$ and $AI(OH)_3$ via ground(planetary ball mill) and unground(wet ball mill) were investigated. The single phase $LaAIO_3$ of ground powder was formed at $1000^{\circ}C$, while that of unground powder was formed at $1300^{\circ}C$. Density and grains of ground sample showed 98% of theory density and a uniform size of 0.75\mu\textrm{m}$, respectively, However those of unground sample showed 93% and non-uniform sizes of 4-5 $\mu\textrm{m}$. Dielectric constant and temperature coefficient of capacitance ($\tau$c) of both ground and unground samples were 21~22 and +70~74 ppm$/^{\circ}C$, respectively. Dielectric loss of ground sample(0.0004) was 10 times as low as that of unground sample(0.003) due to a uniform and small gram size.