• KEPCO Journal on Electric Power and Energy
• /
• v.5 no.3
• /
• pp.209-213
• /
• 2019

Recently, demand for high energy density and long cycling stability of energy storage system has increased for application using with frequency regulation (F/R) in power grid. Supercapacitor have long lifetime and high charge and discharge rate, it is very adaptable to apply a frequency regulation in power grid. Supercapacitor can complement batteries to reduce the size and installation of batteries. Because their utilization in a system can potentially eliminate the need for short-term frequent replacement as required by batteries, hence, saving the resources invested in the upkeep of the whole system or extension of lifecycle of batteries in the long run of power grid. However, low energy density in supercapacitor is critical weakness to utilization for huge energy storage system of power grid. So, it is still far from being able to replace batteries and struggle in meeting the demand for a high energy density. But, today, LIC (Lithium Ion Capacitor) considered as an attractive structure to improve energy density much more than EDLC (Electric double layer capacitor) because LIC has high voltage range up to 3.8 V. But, many aspects of the electrochemical performance of LIC still need to be examined closely in order to apply for commercial use. In this study, in order to improve the capacitance of LIC related with energy density, we designed new method of pre-doping in anode electrode. The electrode in cathode were fabricated in dry room which has a relative humidity under 0.1% and constant electrode thickness over $100{\mu}m$ was manufactured for stable mechanical strength and anode doping. To minimize of contact resistance, fabricated electrode was conducted hot compression process from room temperature to $65^{\circ}C$. We designed various pre-doping method for LIC structure and analyzing the doping mechanism issues. Finally, we suggest new pre-doping method to improve the capacitance and electrochemical stability for LIC.

• Journal of the Korean Electrochemical Society
• /
• v.4 no.3
• /
• pp.113-117
• /
• 2001

Specific capacitance and charge-discharge rate of EDLC using activated carbon electrode were affected by the compositions of electrolytes, the conditions of charge-discharge and physical properties of activated carbon materials. The activated carbon electrode was prepared by dip coating method. Charge-discharge test and electrochemical experiments were carried out for various kinds of organic electrolytes. Effects of charge and discharge current density on the specific capacitance were studied. Characteristics of leakage current, self-discharge and time-voltage curves in optimum conditions of organic electrolytes were compared with conventional $1M-Et_4NBF_4/PC$ electrolyte. The EDLC using MSP-20(specific surface area: $2000m^2/g$) electrode and $1M-LiPF_6/PC-DEC(1:1)$ was exhibited th highest specific capacitance of 130F/g and low polarization resistances. The EDLC using MSP-20 electrode at $1M-LiPF_6/PC-DEC(1:1)$ was small leak current of 0.0004A for 15min, long voltage retention of 0.8V after 100h and linear time-voltage curves with small IR-drop.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.11 s.353
• /
• pp.37-47
• /
• 2006

This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.16 no.6
• /
• pp.66-73
• /
• 2002

This paper presents ZVZCS(Zero-Voltage and Zero-Current Switching) Three Level DC/DC Converter without primary freewheeling diodes. The new converter presented in this paper used a phase shirt control with a flying capacitor in the primary side to achieve ZVS for the outer switches. A secondary anxiliary circuit which consists of one small capacitor, two small diodes and one coupled inductor, is added in the secondary to provide ZVZCS conditions to primary switches, ZVS for outer switches and ZCS for inner switches. Many advantages include simple secondary auxiliary circuit topology, high efficiency, and low cost make the new converter attractive for high power applications. Also the circulating current flows through the circuit so that it causes the needless coduction loss to be occurred in the devices and the transformer of the circuit The new converter has no primary auxiliary diodes for freewheeling current. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 1[㎾］ 50[KHz］IGBT based experimental circuit.

• Clean Technology
• /
• v.27 no.4
• /
• pp.277-290
• /
• 2021

A supercapacitor, also called an ultracapacitor or an electrochemical capacitor, stores electrochemical energy by the adsorption/desorption of electrolytic ions or a fast and reversible redox reaction at the electrode surface, which is distinct from the chemical reaction of a battery. A supercapacitor features high specific power, high capacitance, almost infinite cyclability (~ 100,000 cycle), short charging time, good stability, low maintenance cost, and fast frequency response. Supercapacitors have been used in electronic devices to meet the requirements of rapid charging/discharging, such as for memory back-up, and uninterruptible power supply (UPS). Also, their use is being extended to transportation and large industry applications that require high power/energy density, such as for electric vehicles and power quality systems of smart grids. In power generation using intermittent power sources such as solar and wind, a supercapacitor is configured in the energy storage system together with a battery to compensate for the relatively slow charging/discharging time of the battery, to contribute to extending the lifecycle of the battery, and to improve the system power quality. This article provides a concise overview of the principles, mechanisms, and classification of energy storage of supercapacitors in accordance with the electrode materials. Also, it provides a review of the status of recent research and patent, product, and market trends in supercapacitor technology. There are many challenges to be solved to meet industrial demands such as for high voltage module technologies, high efficiency charging, safety, performance improvement, and competitive prices.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1553-1555
• /
• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.8
• /
• pp.61-70
• /
• 2009

A 10b 30MS/s pipelined ADC operating under 1V power supply is presented. It utilizes a switched-RC based input sampling circuit and a resistive loop to reset the feedback capacitor in the multiplying digital-to-analog converter (MDAC) for the low-voltage operation. Cascaded switched-RC branches are used to achieve accurate grain of the MDAC for the first stage and separate switched-RC circuits are used in the sub-ADC to suppress the switching noise coupling to the MDAC input The measured differential and integral non-linearities of the prototype ADC fabricated in a 0.13${\mu}m$, CMOS process are less than 0.54LSB and 1.75LSB, respectively. The prototype ADC achieves 54.1dB SNDR and 70.4dB SFDR with 1V supply and 30MHz sampling frequency while consuming 17mW power.

• Journal of Power Electronics
• /
• v.17 no.2
• /
• pp.490-500
• /
• 2017

Fuel cell (FC) is a promising power supply in electric vehicles (EV); however, it has poor dynamic performance and short service life. To address these shortcomings, a super capacitor (SC) is adopted as an auxiliary power supply. In this study, the frequency decoupling control method is used in electric vehicle energy system. High-frequency and low-frequency demand power is provided by SC and FC, respectively, which makes full use of two power supplies. Simultaneously, the energy system still has rapidity and reliability. The distributed power system (DPS) of EV requires DC-DC converters to achieve the desired voltage. The stability of cascaded converters must be assessed. Impedance-based methods are effective in the stability analysis of DPS. In this study, closed-loop impedances of interleaved half-bridge DC-DC converter and phase-shifted full-bridge DC-DC converter based on the frequency decoupling control method are derived. The closed-loop impedance of an inverter for permanent magnet synchronous motor based on space vector modulation control method is also derived. An improved Middlebrook criterion is used to assess and adjust the stability of the energy system. A theoretical analysis and simulation test are provided to demonstrate the feasibility of the energy management system and the control method.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.795-797
• /
• 1998

A $BaTiO_3$, ferroelectric material, was mixed $SrTiO_3$, $(x)BaTiO_3-(1-x)SrTiO_3$($0.7{\leq}x{\leq}1$) ceramic capacitor with stable electrical properties in high voltage was fabricated. And microstructure, electrical property were investigated with $SrTiO_3$ mol ratio. The shrinkage, open porosity, sintering density were predominated at $9BaTiO_3-0.1SrTiO_3$. Increasing $SrTiO_3$ mol ratio, curie temperature was shifted at low temperature and maximum permittivity was increased. Also, $0.9BaTiO_3-0.1SrTiO_3$ was showed stable dielectric properties at $25{\sim}80[^{\circ}C]$. V-I properties of specimen were observed in the temperature range of $21{\sim}143[^{\circ}C]$, were divided into three regions. The region I below 10[kV/cm] was shown Ohmic conduction, the region II from 10 to 30[kV/cm] was explained by the Poole-Frenkel emission theory and the region III above 30[kV/cm] was analysed by the tunneling effect.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.4
• /
• pp.1-6
• /
• 2000

Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.