• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.211-214
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• 2009

In this paper we will outline the opportunities for flexible OLED devices, both for display and solid-state lighting applications. We will present our recent data, and discuss future challenges, for low power consumption phosphorescent OLED technology fabricated on flexible substrates to enable a new generation of energy efficient electronic devices.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.1826-1829
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• 2005

Recent advancement in wireless communications and electronics has enabled the development of low power sensor network. Wireless sensor network are often used in remote monitoring control applications, health care, security and environmental monitoring. Wireless sensor networks are an emerging technology consisting of small, low-power, and low-cost devices that integrate limited computation, sensing, and radio communication capabilities. Sensor network platform for health care has been designed, fabricated and tested. This system consists of an embedded micro-controller, Radio Frequency (RF) transceiver, power management, I/O expansion, and serial communication (RS-232). The hardware platform uses Atmel ATmega128L 8-bit ultra low power RISC processor with 128KB flash memory as the program memory and 4KB SRAM as the data memory. The radio transceiver (Chipcon CC1000) operates in the ISM band at 433MHz or 916MHz with a maximum data rate of 76.8kbps. Also, the indoor radio range is approximately 20-30m. When many sensors have to communicate with the controller, standard communication interfaces such as Serial Peripheral Interface (SPI) or Integrated Circuit ($I^{2}C$) allow sharing a single communication bus. With its low power, the smallest and low cost design, the wireless sensor network system and wireless sensing electronics to collect health-related information of human vitality and main physiological parameters (ECG, Temperature, Perspiration, Blood Pressure and some more vitality parameters, etc.)

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.216-222
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• 2017

The most prominent challenge for MOSFET scaling is to reduce power consumption; however, the supply voltage ($V_{DD}$) cannot be scaled down because of the carrier injection mechanism. To overcome this limit, a new type of field-effect transistor using positive feedback as a carrier injection mechanism (FBFET) has been proposed. In this study we have investigated the electrical characteristics of a $Si_{1-x}Ge_x$ FBFET with one gate and one-sided $Si_3N_4$ spacer using TCAD simulations. To reduce the drain bias dependency, $Si_{1-x}Ge_x$ was introduced as a low-bandgap material, and the minimum subthreshold swing was obtained as 2.87 mV/dec. This result suggests that a $Si_{1-x}Ge_x$ FBFET is a promising candidate for future low-power devices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.5
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• pp.931-937
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• 2015

Distributed relay scheme for wireless ad hoc multi-hop multicast network composed of low-power and low-complexity wireless devices with high density is proposed. The proposed relay scheme is shown to be better than flooding, which is the distributed relay scheme applied to ZigBee, in the outage probability and the multicast transmission rate by simulations.

• Journal of information and communication convergence engineering
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• v.7 no.2
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• pp.219-222
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• 2009

An efficient interpolation FIR filter structure for high-density and low-power electronic devices is proposed. The proposed structure is based on polyphase decomposition property and look-up table method. By computer-aided design simulations, it is shown that the use of the proposed method can result in reduction in the number of gates by 54% and can reduce power consumption by 9%.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.290-292
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• 2009

With advance in technologies for wireless sensor networks(WSNs), 2.4 GHz band has become gradually attractive due to increase in low-power wireless communication devices. Especially ZigBee(IEEE 802.15.4-based) technology whose frequency band includes the 2.4GHz industrial, scientific and medical band providing nearly worldwide availability has been universally applicable to a various remote monitoring system and applications related home network system. However network throughput of these systems is significantly deteriorated due to this ISM band is a license-exemption used in a variety of low-power wireless communication devices. For instance, other IEEE 802 wireless standards such as Bluetooth, WLAN, Wi-Fi and others cause radio interference to ZigBee. The experiments was carried out to analyze radio frequency interference between heterogeneous devices using ISM bands to improve the limited frequency utility factor. Finally this paper suggests a frequency hopping-based adaptive multi-channel methods to decrease interference with empirical results.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.11
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• pp.2014-2019
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• 2006

PDP driving circuit requires switching devices and capacitors to stand up high voltages over 160V. This is the main cause that the power consumption and the cost of a PDP driving circuit increase. Conventional PDP driving circuits consist of 3 voltage sources and 16 switching devices. In this paper, we propose a PDP driving circuit using 2 voltage sources and 12 switching devices that can be operated with a lower supply voltage than conventional driving circuit. The operation of the proposed driving circuit is verified by the computer simulation. Simulation results show that the output signal can drive PDP cell when the supply voltage is higher than 45V in the input frequency range 70kHz to 100kHz.

• Electronics and Telecommunications Trends
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• v.38 no.1
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• pp.36-45
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• 2023

The increasing demand for ultra-high efficiency of compact power conversion systems for electric vehicle applications has brought GaN power semiconductors to the fore due to their low conduction losses and fast switching speed. In particular, the development of materials and core device processes contributed to remarkable results regarding the publication of vertical GaN power devices with high breakdown voltage. This paper reviews recent advances on GaN material technology and vertical GaN power device technology. The GaN material technology covers the latest technological trends and GaN epitaxial growth technology, while the vertical GaN power device technology examines diodes, Trench FETs, JFETs, and FinFETs and reviews the vertical GaN PiN diode technology developed by ETRI.

• IEMEK Journal of Embedded Systems and Applications
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• v.7 no.4
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• pp.201-207
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• 2012

Currently, NAND Flash memory has been widely used in consumer storage devices due to its non-volatility, stability, economical feasibility, low power usage, durability, and high density. However, a high capacity of NAND flash memory causes the high power consumption and the low performance. In the convention memory research, a hierarchical filter mechanism can archive an effective performance improvement in terms of the power consumption. In order to attain the best filter structure for NAND flash memory, we selected a direct-mapped filter, a victim filter, a fully associative filter and a 4-way set associative filter for comparison in the performance analysis. According to the results of the simulation, the fully associative filter buffer with a 128byte fetching size can obtain the bet performance compared to another filter structures, and it can reduce the energy*delay product(EDP) by about 93% compared to the conventional NAND Flash memory.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.2
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• pp.117-125
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• 2016

In this paper, the inverter switch losses of BLDC motor for three types of PWM methods and power devices were analyzed. When the BLDC motor is driven at low currents, the inverter switch losses for MOSFET are low because MOSFET operates like resistance. However, the inverter switch losses for IGBT are higher than MOSFET due to its large turn-off losses. Moreover, synchronous rectification switching method is adaptable because MOSFET has 2-channel. So, MOSFET can be driven with more low impedance and losses. For low power inverter with MOSFET, the power losses of unified PWM are lower than that of unipolar and bipolar PWM. Proposed method and losses analysis results are verified by examination and simulation using Matlab/Simulink.