• Title/Summary/Keyword: Low Light

검색결과 4,231건 처리시간 0.034초

Dimming Control of LED Light Using Pulse Frequency Modulation in Visible Light Communication

  • Lee, Seong-Ho
    • Journal of information and communication convergence engineering
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    • 제19권4호
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    • pp.269-275
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    • 2021
  • Light-emitting diodes (LEDs) are modulated using a square wave pulse sequence for flicker prevention and dimming control in visible light communication (VLC). In a VLC transmitter, the high and low bits of the non-return-to-zero (NRZ) data are converted to two square waves of different frequencies, which continue for a finite time defined by the fill ratio in an NRZ bit time. As the average optical power was kept constant and independent of data transmission, the LED was flicker-free. Dimming control is carried out by changing the fill ratio of the square wave in the NRZ bit time. In the experiments, the illumination of the LED light was controlled in the range of approximately 19.2% to 96.2% of the continuous square wave modulated LED light. In the VLC receiver, a high-pass filter combined with a latch circuit was used to recover the transmitted signal while preventing noise interference from adjacent lighting lamps.

저온소성 형광체 페이스트의 특성 연구 (A Study on the Characteristics of Low Temperature Calcined Phosphor Paste)

  • 이동욱;이미영;안석출;남수용
    • 청정기술
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    • 제14권1호
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    • pp.14-20
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    • 2008
  • 본 연구에서는 LCD BLU에 적용 가능한 면광원용 저온소성 형광체 페이스트(paste)를 제조하여 그 특성을 검토하였다. 형광체 paste에는 저온 소성용 아크릴 레진을 바인더로 사용하였으며, 그 열분해특성을 검토한 결과 $400^{\circ}C$에서 잔탄이 0.1 wt% 이하인 것을 확인 할 수 있었다. 본 연구에서 제조한 paste로 스크린 인쇄를 통해 면광원용 device를 제작한 결과, 형광체 휘도에 대해 100%에 가까운 발광특성을 나타내었다.

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TTS로 성막한 Al 캐소드를 가진 유기발광소자의 특성 분석 (Characteristics of organic light-emitting diodes with AI cathode prepared by ITS system)

  • 문종민;이상현;김한기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.74-75
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    • 2007
  • We report on the characteristics of organic light-emitting diodes with Al cathode deposited by specially designed twin target sputter(TTS) system. It was found that the Al cathode films grown by TTS system were amorphous structure with nanocrystallines due to low substrate temperature during sputtering process. Effective confinement of high-density plasma between two Al targets lead to low temperature sputtering process on organic layer. Moreover, organic light-emitting diodes with Al cathode deposited by TTS system exhibited low leakage current density of $4{\times}10^{-6}\;mA/cm2$ at -6 V indicating plasma damage due to bombardment of energetic particles such as ions and $\gamma$-electrons was effectively restricted in the ITS system. Sputtering method using ITS system is expected to be applied in organic electronics and flexible displays due to its low temperature and plasma damage free deposition process.

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A Noisy Infrared and Visible Light Image Fusion Algorithm

  • Shen, Yu;Xiang, Keyun;Chen, Xiaopeng;Liu, Cheng
    • Journal of Information Processing Systems
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    • 제17권5호
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    • pp.1004-1019
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    • 2021
  • To solve the problems of the low image contrast, fuzzy edge details and edge details missing in noisy image fusion, this study proposes a noisy infrared and visible light image fusion algorithm based on non-subsample contourlet transform (NSCT) and an improved bilateral filter, which uses NSCT to decompose an image into a low-frequency component and high-frequency component. High-frequency noise and edge information are mainly distributed in the high-frequency component, and the improved bilateral filtering method is used to process the high-frequency component of two images, filtering the noise of the images and calculating the image detail of the infrared image's high-frequency component. It can extract the edge details of the infrared image and visible image as much as possible by superimposing the high-frequency component of infrared image and visible image. At the same time, edge information is enhanced and the visual effect is clearer. For the fusion rule of low-frequency coefficient, the local area standard variance coefficient method is adopted. At last, we decompose the high- and low-frequency coefficient to obtain the fusion image according to the inverse transformation of NSCT. The fusion results show that the edge, contour, texture and other details are maintained and enhanced while the noise is filtered, and the fusion image with a clear edge is obtained. The algorithm could better filter noise and obtain clear fused images in noisy infrared and visible light image fusion.

저조도 환경에서 명암도 분석 기반의 에지 검출 (Edge Detection based on Contrast Analysis in Low Light Level Environment)

  • 박화정;김남호
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2022년도 춘계학술대회
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    • pp.437-440
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    • 2022
  • 현대 사회는 4차 산업 혁명과 IoT 기술 등의 발전으로 영상 처리 분야의 활용이 급증하고 있다. 특히, 에지 검출은 이미지 분류, 객체 검출 등 영상 처리 응용에서 필수적인 전처리 과정으로 여러 분야에서 널리 사용되고 있다. 에지를 검출하기 위한 기존의 방법에는 소벨 필터(Sobel edge detection filter), 로버츠 필터(Roberts edge detection filter), 프리윗 필터(Prewitt edge detection filter), LoG(Laplacian of Gaussian) 등이 있다. 하지만 기존의 방법들은 명암도가 낮은 저조도 환경에서 에지 검출 특성이 다소 미흡한 성능을 보인다는 단점이 있다. 따라서 본 논문에서는 저조도 환경에서도 에지 검출 특성을 높이기 위해 명암도 분석에 기반한 에지 검출 알고리즘을 제안한다.

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가시광 영역의 저간섭성 광원을 이용한 마이겔슨 간섭계 (Low-coherence non-scanning michelson interferometry using visible broadband light source)

  • 송민호;이병호
    • 전자공학회논문지A
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    • 제33A권10호
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    • pp.160-167
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    • 1996
  • A new pathlength deviation detection technique which is composed of michelson interferometer is described and verified experimentally. The technique uses a sub-threshold biased visible laser diode of 20$\mu$m coherence length as a low-coherent light source. And for zeroth-order fringe(which is the largest among fringes) identification we used a piezoelectric transducer with a large modulation smplitude, which enables without the need of constant velocity scanning, to distinguish reflection surfaces separated by more than 10$\mu$m with a resolution of less than half-wavelength.

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Hole-Trapping in Iodine-Doped Pentacene Films at Low Temperatures

  • Yun, W.J.;Cho, J.M.;Lee, J.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.70-73
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    • 2006
  • Pentacene films, grown on polyethylene terephthalate (PET) substrates, were doped with Iodine. ESR measurements were made for the films in the temperature range of 100-300 K. Two regimes of doping stages were discernible: a light (intercalation) doping regime and a heavy doping regime. The light doping regime was concluded to be dominated by localized holes that were trapped at low temperatures, which indicated trap states near the valence band edge.

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P-OLED Microdisplay Technology

  • Underwood, Ian;Buckley, Alastair;Yates, Chris
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.105-110
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    • 2006
  • The highly integrated nature of polymer based organic light emitting diode (POLED) microdisplay technology, coupled with low voltage and low power electroluminescent light generation, combine to offer a very promising technology for use in portable and personal electronics products. We briefly describe the technology before discussing how to engineer the color gamut using whiteemitting polymer materials, microcavity device structure and color filter absorbance.

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$Er^{3+}$$Tm^{3+}$이 복합 첨가된 실리카 광섬유의 ASE 광원에 대한 특성 평가 (Characterization of amplified spontaneous emission light source from an $Er^{3+}$/$Tm^{3+}$co-doped silica fiber)

  • Jeong, Hoon;Oh, K.
    • 한국광학회:학술대회논문집
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    • 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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    • pp.96-97
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    • 2000
  • Incoherent broadband optical sources have been applied in various areas such as a light source for optical device characterization, fiber-optic gyroscopes$^{(1)}$ , and spectrum sliced light source in wavelength division multiplexing (WDM) system$^{(2)}$ . To utilize the inherent low loss in silica optical fibers, various types of incoherent light sources are being developed. Among the light sources, the amplified spontaneous emission (ASE) from a rare earth doped fiber has benefits in temperature stability, high output power, low polarization dependence over semiconductor diodes$^{(3)}$ . Recently erbium doped fibers (EDF) have been intensively researched for ASE sources as well as optical amplifiers$^{(4)}$ . The spectrum of ASE from an EDF, however, is limited in the 1520~1560 nm range in conventional configurations. In this letter we described a new broadband ASE source which included both the conventional ASE band of Er$^{3+}$ ion, 1520nm~1560nm and ASE band from Tm$^{3+}$ ions that extends the bandwidth further. For the first time, to the best knowledge of authors, a fiber ASE source based on the energy transfer between Er$^{3+}$ and Tm$^{3+}$ ions in the range of 1460~1550 nm, has been demonstrated using a single 980nm pump laser diode. (omitted)omitted)

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Methods to Measure the Critical Dimension of the Bottoms of Through-Silicon Vias Using White-Light Scanning Interferometry

  • Hyun, Changhong;Kim, Seongryong;Pahk, Heuijae
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.531-537
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    • 2014
  • Through-silicon vias (TSVs) are fine, deep holes fabricated for connecting vertically stacked wafers during three-dimensional packaging of semiconductors. Measurement of the TSV geometry is very important because TSVs that are not manufactured as designed can cause many problems, and measuring the critical dimension (CD) of TSVs becomes more and more important, along with depth measurement. Applying white-light scanning interferometry to TSV measurement, especially the bottom CD measurement, is difficult due to the attenuation of light around the edge of the bottom of the hole when using a low numerical aperture. In this paper we propose and demonstrate four bottom CD measurement methods for TSVs: the cross section method, profile analysis method, tomographic image analysis method, and the two-dimensional Gaussian fitting method. To verify and demonstrate these methods, a practical TSV sample with a high aspect ratio of 11.2 is prepared and tested. The results from the proposed measurement methods using white-light scanning interferometry are compared to results from scanning electron microscope (SEM) measurements. The accuracy is highest for the cross section method, with an error of 3.5%, while a relative repeatability of 3.2% is achieved by the two-dimensional Gaussian fitting method.