• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.9
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• pp.4467-4486
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• 2018

Trying to deal with the problem of low robustness of Copy-Move Forgery Detection (CMFD) under various transformation and degradation attacks, a novel CMFD method is proposed in this paper. The main advantages of proposed work include: (1) Discrete Analytical Fourier-Mellin Transform (DAFMT) and Locality Sensitive Hashing (LSH) are combined to extract the block features and detect the potential copy-move pairs; (2) The Euclidian distance is incorporated in the pixel variance to filter out the false potential copy-move pairs in the post-verification step. In addition to extracting the effective features of an image block, the DAMFT has the properties of rotation and scale invariance. Unlike the traditional lexicographic sorting method, LSH is robust to the degradations of Gaussian noise and JEPG compression. Because most of the false copy-move pairs locate closely to each other in the spatial domain or are in the homogeneous regions, the Euclidian distance and pixel variance are employed in the post-verification step. After evaluating the proposed method by the precision-recall-$F_1$ model quantitatively based on the Image Manipulation Dataset (IMD) and Copy-Move Hard Dataset (CMHD), our method outperforms Emam et al.'s and Li et al.'s works in the recall and $F_1$ aspects.

• 전자공학회논문지 IE
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• v.45 no.1
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• pp.31-37
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• 2008

A Wibro RF down converter of 2.3GHz band is designed and implemented in this paper. The problems that can occur in the receiver LNA(Low Noise Amplifier) to minimize additional purposes. In addition, 2.3GHz band from the 75 MHz downward to minimize the losses in the process, transform and improve efficiency, and achieve stable characteristics can be used to make high frequency characteristics of the device. Wibro repeater uses a TDMA(Time Division Multiplexing Access) method is needed because the RF switch. Production criterion specification, the input voltage from +8 V 1.2A of current consumption, 60dB gain and the noise figure of less than 2.5dB, VSWR(Voltage Standing Wave Ratio) less than 1.5, more than IMD(Inter Modulation Distortion) 60dB satisfied. Environmental conditions ($-20^{\circ}C$ to $70^{\circ}C$) to pass the test of reliability in a long time, that seemed crafted Wibro down converter be applied to the Wibro repeater.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.671-680
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• 2005

The CFL linearisation chip which is one of key devices in ultra-narrowband mobile radio transmitter using CQPSK digital modulation method is designed and implemented with $0.35{\mu}m$ CMOS technology. The reduced size and low cost of transmitter are available by the use of direct-conversion and CFL ASIC chip, which improve the power effi챠ency and linearity of transmitting path. In addition, low power operation is possible through CMOS technology The performance test results of transmitter show -25 dBc improvement of IMD level at the 3 kHz frequency offset and then satisfy FCC 47 CFR 90.210 E emission mask in the operation of CFL ASIC chip. At that time, the transmitting power is about PEP(Peak-to-Envelope Power) 5 W. The main parameters to improve the transmitting characteristic and to compensate the distortion in feed back loop such as DC-offset, loop gain and phase value are interfaced with notebook PC to be controlled with S/W.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.267-267
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.