• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.304-309
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• 2001

With the development of electromagnetic communication technology and increased use of electromagnetic wave, the countermeasure of EMI(Electromagnetic Interference) becomes more important socially, and interest for the electromagnetic wave absorber has also increased. In this paper, we have studied characteristics of frequency dependency on complex permittivity and complex permeability according to the changes of composition rate and sintering temperature of NiCuZn ferrite also known as electromagnetic wave absorber and further looked into effect of electromagnetic wave absorption properties. From the measurement where the composition of Fe$_2$O$_3$ and ZnO of NiCuZn ferrite was fixed at 49 and 34 mol% respectively while composition of NiO and CuO has been varied at each test, we found out that initial permeability and permittivity were high and the absorbing ability of electromagnetic wave recorded best with loss tangent(${\mu}$r"/${\mu}$r′) displays more than 1 within the frequency band of 2MHz～9.5MHz when the composition ratio of NiO was ranged around 8.5～9.5 mol% and the sintering temperature was 1,080$^{\circ}C$.

• 한국재료학회지
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• 제26권1호
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 1987년도 학술발표초록집
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• pp.11-11
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• 1987

Among other poly(4,4'-terephthanilidealkylamide)s (PTAA's), poly (4,4'-terephthanilideadipamide) (PTAd) gave clear critical concentration curves. For PTAA's with methylene units more than 6, the critical concentration (C*) seemed to be beyond the solubility limit of H₂SO₄. Under shearing conditions, the nematic domains were easily oriented and stretched in the direction of shear , and a fibrillar structure resulted. At low frequencies, a monotollous reduction of loss tangent (tan) was observed as concentration increased. At high frequencies, however, tan was increased above C* again, and showed maximum at saturation concentration (Cs). With increasing temperature, viscosity of isotropic and anisotropic phases was normally decreased, while viscosity of biphases was increased. Plot of complex viscosity (If) against temperature based on rheological measurements exhibited a good correlation with phase diagram constructed by polarizing microscope observations. Rheological parameters suggested the optimum dope concentration of PTAd with inherent viscosity 2.02 at 30oc is in the vicinity of 19.2 wt%, which seemed to agree well with spinning experiments (around 19.4 wt%). In general, effects of spinning and annealing conditions on the mechanical properties of PTAA fibres were most pronounced in PTAd fibre spun from anisotropic spinning dope .

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1540-1542
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• 1997

Plasma polymerized thin films were fabricated by interelectrode capacitively coupled type apparatus. FT-IR analyses indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Relative dielectric constant and dielectric loss tangent of thin films fabricated in the discharge power of 90[W] showed $3.212{\sim}3.805$ and $0.0026{\sim}0.0451$ in alternating frequency of $10^3{\sim}10^6$[Hz]. Contact angle measurement indicated that cross-link of the films is increased with the discharge power.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.65-67
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• 2015

본 논문에서는 소형 WLAN 안테나에 적용 가능한 안테나 설계를 설계하고 적용 가능성을 검토하였다. 제안된 안테나는 $45mm{\times}45mm$ 크기의 RF4 기판(비유전율 4.4, 두께 1.6 mm, 손실탄젠트 0.025) 위에 $29mm{\times}29mm$ 크기의 마이크로스트립 패치 안테나를 인쇄하여 MoM법으로 계산하였다. 광대역 특성을 얻기 위하여 기판 상부에 위치한 패치 안테나의 대각 모서리를 3.2mm 커팅 처리하고 급전부는 50ohm 임피던스 정합을 위해 안테나 중심축에서 수평 방향으로 5.1mm 위치로 결정하였다. 계산 결과로서 WLAN 사용대역 2.4-2.48GHz을 고려할 때 정재파비가 2 이하인 주파수 대역은 2.365-2.45GHz(85MHz, 3.53%)로 나타났다.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.724-727
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• 2009

We have fabricated (Ba,Sr)TiO3$TiO_3$ thick films doped with various amount of ZnBO dopants (1, 3, and 5 wt%) by screen printing method on the alumina substrates, which were sintered at the temperature below $1200^{\circ}C$. With increasing the amount of ZnBO dopants, the relative dielectric permittivity of ZnBO doped (Ba,Sr)$TiO_3$ was decreased, while loss tangent was increased. 1 wt% ZnBO doped (Ba,Sr)$TiO_3$ thick film has relative dielectric permittivity of 759 at 1 MHz, while 3 and 5 wt% of ZnBO doped (Ba,Sr)$TiO_3$ thick films have 624 and 554, respectively. By introducing ZnBO dopants to the (Ba,Sr)$TiO_3$ thick films, leakage current densities were decreased. The decreased leakage current with increasing ZnBO dopants can be explained by increased density and grain size of thick film on alumina substrate. We believe this decreased leakage current density probably come from the increased grain size and increased density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.353-353
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• 2008

트랜지스터 속도는 현저하게 향상되어지는 반면에 RFICs(RF integrated circuits)는 대용량화, 고속화, 고집적화, 소형화, 고 효율화 온칩(on-chip) 수동소자의 부재에 의해 발전을 이루지 못하였다. 즉, 최근 전자기기의 집적화, 초소형화 됨에 따라 실장 밀도를 높이기 위해 부품의 소형화가 강하게 요구되는 동시에 Radio Frequency(RF)에서 이용가능한 수동소자인 capacitor를 개발하고자 본 논문에서는 손가락 모양(interdigital configuration)을 갖는 RF capacitor를 Ansoft사의 HFSS를 이용하여 이상적인 S-parameter, 정전용랑(capacitance), 손실계수(loss tangent)를 도출하고자 한다. 680um의 $Al_2O_3$ 기판에 BST doped MgO을 30um, Chromium과 gold를 각각 5um로 증착시켰다. 핑거 개수 (n, number), 핑거 길이(1, length), 핑거 간격(g, gap), 핑거 너비(w, width)를 변화 시켜가면서 이상적인 결과 값에 가까운 모양 (interdigital configuration)을 얻을 수 있었다. 핑거 수 3 개 일 때 입력 값에 대하여 손실 없는 출력 값(투과값)을 갖는 $S_{21}$이 1.5GHz에서 6dB이하로 떨어졌으며 핑거 간격이 줄고 핑거 너비가 커지고 핑거길이가 커질수록 높은 캐패시턴스 값을 갖는 것을 확인 할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.261-262
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• 2008

분산제의 종류와 함량이 무기물-유기물 복합재료의 레올로지 특성 및 유전특성에 미치는 영향에 대하여 고찰하였다. 먼저 Multiple light scattering 방법을 통하여 용액의 입자 이동속도와 용액의 맑은층의 두께변화를 살펴보았으며 이를 통해 적정한 분산제의 선정 및 선정된 분산제의 함량비에 따른 무기물 분말의 분산 특성을 고찰하였다. 그리고 테이프 캐스팅을 통하여 테이프를 제작한 후 1GHz에서 유전특성을 측정하였다. 위 결과들을 통하여 분산제의 종류와 함량비에 따라 용액 및 슬러리의 특성이 다르며 적정한 분산제를 사용하여 유전상수 16.5에 유전손실 0.0058의 복합재료를 제작할 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 춘계학술대회
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• pp.77-78
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• 2016

본 논문에서는 소형 WLAN 안테나에 적용 가능한 안테나 설계를 설계하고 적용 가능성을 검토하였다. 제안된 안테나는 $20mm{\times}60mm$ 크기의 RF4 기판(비유전율 4.4, 두께 1.6 mm, 손실탄젠트 0.025) 위에 $20mm{\times}20mm$ 크기 이내로 마이크로스트립 패치 안테나를 인쇄하였다. 안테나 파라미터는 OpenFDTD 시뮬레이터를 사용하여 계산하였다. 계산 결과로서 WLAN 사용대역 2.4-2.48GHz을 고려할 때 정재파비가 2 이하인 주파수 대역은 1.82-3.05GHz(1.23GHz, 44.6%)로 나타났다.