• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.6
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• pp.681-687
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• 2014

Nuclear industries have faced unfavorable circumstances such as an obsolescence of the instrumentation and control system, and therefore nuclear society is striving to resolve this issue fundamentally. IEC and IAEA judge that FPGA technology is a good replacement for Programmable Logic Controller (PLC) of Nuclear Instrumentation and Control System. FPGAs are currently highlighted as an alternative means for obsolete control systems. Because the main function inside an FPGA is initially developed as software, good software quality can impact the reliability of an FPGA-based controller. Therefore, it is necessary to establish a software development aspect strategy that enhances the reliability of an FPGA-based controller. In terms of software development, HDL-Programmed Device (HPD) Development Life Cycle is applied into FPGA-based Controller. The burn-in test and environmental(temperature) test should be performed in order to apply into nuclear instrumentation and control system. Therefore it is ensured that the developed FPGA-based controller are normally operated for 352 hours and 92 hours in test chamber of Korea Institute of Machinery and Materials (KIMM).

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.620-621
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• 2008

Transparent electronics has been one of the key terminologies forecasting the ubiquitous technology era. Several researchers have thus extensively developed transparent oxide-based thin-film transistors (TFTs) on glass and plastic substrates although in general high voltage operating devices have been mainly studied considering transparent display drivers. However, low voltage operating oxide TFTs with transparent electrodes are very necessary if we are aiming at logic circuit applications, for which transparent complementary or one-type channel inverters are required. The most effective and low power consuming inverter should be a form of complementary p-channel and n-channel transistors but real application of those complementary TFT inverters also requires electrical- and even photo-stabilities. Since p-type oxide TFTs have not been developed yet, we previously adopted organic pentacene TFTs for the p-channel while ZnO TFTs were chosen for n-channel on sputter-deposited $AlO_x$ film. As a result, decent inverting behavior was achieved but some electrical gate instability was unavoidable at the ZnO/$AlO_x$ channel interface. Here, considering such gate instability issues we have designed a unique transparent complementary TFT (CTFTs) inverter structure with top n-ZnO channel and bottom p-pentacene channel based on 12 nm-thin nano-oxide/self assembled monolayer laminated dielectric, which has a large dielectric strength comparable to that of thin film amorphous $Al_2O_3$. Our transparent CTFT inverter well operate under 3 V, demonstrating a maximum voltage gain of ~20, good electrical and even photoelectric stabilities. The device transmittance was over 60 % and this type of transparent inverter has never been reported, to the best of our limited knowledge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Journal of IKEEE
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• v.26 no.3
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• pp.422-429
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• 2022

A light sensor chip requires a small capacity eFuse (electrical fuse) OTP (One-Time Programmable) memory IP (Intellectual Property) to trim analog circuits or set initial values of digital registers. In this paper, 128-bit eFuse OTP IP is designed using only 3.3V MV (Medium Voltage) devices without using 1.8V LV (Low-Voltage) logic devices. The eFuse OTP IP designed with 3.3V single MOS devices can reduce a total process cost of three masks which are the gate oxide mask of a 1.8V LV device and the LDD implant masks of NMOS and PMOS. And since the 1.8V voltage regulator circuit is not required, the size of the illuminance sensor chip can be reduced. In addition, in order to reduce the number of package pins of the illumination sensor chip, the VPGM voltage, which is a program voltage, is applied through the VPGM pad during wafer test, and the VDD voltage is applied through the PMOS power switching circuit after packaging, so that the number of package pins can be reduced.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.60-64
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• 2007

In this paper, we designed FFT for European DTV and implemented system with Stratix EP1S25F672C6 FPGA At the implemented FFT, we used SIC architecture. SIC architecture is composed of algorithm-specific processing element, RAM memory, registers, and a central or distributed control unit. Designed FFT was acceptable either 2K or 8K point FFT processing, and is selectable guard interval such as 1/4, 1/8, 1/16, 1/32. Consequently, it was suitable for the standard of DVB-T(Digital Terrestrial Video Transmission System) specification. It resulted in 12% of total logic gate and 53% of total memory bit in Stratix device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.62-68
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• 1989

In this paper, Analog/Digital BCDMOS technology that the bipolar devices for driver applications CMOS devices for logic applications, and DMOS devices for high voltage applications is pressented. An optimized poly-gate p-well CMOS process is chosen to fabricate the BCDMOS, and the basic concepts to desigh these devices are to improve the characteristics of bipolar, CMOS & DMOS with simple process technology. As the results, $h_{FE}$ value is 320 (Ib-$10{\mu}A$ for bipolar npn transistor, and there is no short channel effects for CMOS devices which have Leff to $1.25{\mu}m$ and $1.35{\mu}m$ for n-channel and p-channel, respectively. Finally, breakdown voltage is obtained higher than 115V for DMOS device.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1167-1175
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• 2021

The process of automation and monitoring in industrial control system involves the use of many types of sensors. A programmable logic controller plays an important role in the automation of the different processes in the power plant system. The major control units are boiler for temperature and pressure, turbine for speed of motor, generator for voltage, conveyer belt for fuel. The power plant units are controlled using microcontrollers and PLCs, but FPGA can be the feasible solution. The paper focused on the design and simulation of hardware chip to monitor boiler, turbine, generator and conveyer belt. The hardware chip of the plant is designed in Xilinx Vivado Simulator 17.4 software using VHDL programming. The methodology includes VHDL code design, simulation, verification and testing on Virtex-5 FPGA hardware. The system has four independent buzzers used to indicate the status of the boiler, generator, turbine motor and conveyer belt in on/off conditions respectively. The GSM is used to display corresponding message on the mobile to know the status of the device in on/off condition. The system is very much helpful for the industries working on plant automation with FPGA hardware integration.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• Journal of IKEEE
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• v.24 no.3
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• pp.901-908
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• 2020

This paper describes a method for scalable hardware implementation of modular inversion. The proposed scalable architecture has a one-dimensional array of processing elements (PEs) that perform arithmetic operations in 32-bit word, and its performance and hardware size can be adjusted depending on the number of PEs used. The hardware operation of the scalable processor for modular inversion was verified by implementing it on Spartan-6 FPGA device. As a result of logic synthesis with a 180-nm CMOS standard cells, the operating frequency was estimated to be in the range of 167 to 131 MHz and the gate counts were in the range of 60,000 to 91,000 gate equivalents when the number of PEs was in the range of 1 to 10. When calculating 256-bit modular inverse, the average performance was 18.7 to 118.2 Mbps, depending on the number of PEs in the range of 1 to 10. Since our scalable architecture for computing modular inversion in GF(p) has the trade-off relationship between performance and hardware complexity depending on the number of PEs used, it can be used to efficiently implement modular inversion processor optimized for performance and hardware complexity required by applications.