• Smart Structures and Systems
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• v.14 no.6
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• pp.1131-1150
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• 2014

One of the issues in extending the range of applicable problems of real-time hybrid simulation is the computation speed of the simulator when large-scale computational models with a large number of DOF are used. In this study, functionality of real-time dynamic simulation of MDOF systems is achieved by creating a logic circuit that performs the step-by-step numerical time integration of the equations of motion of the system. The designed logic circuit can be implemented to an FPGA-based system; FPGA (Field Programmable Gate Array) allows large-scale parallel computing by implementing a number of arithmetic operators within the device. The operator splitting method is used as the numerical time integration scheme. The logic circuit consists of blocks of circuits that perform numerical arithmetic operations that appear in the integration scheme, including addition and multiplication of floating-point numbers, registers to store the intermediate data, and data busses connecting these elements to transmit various information including the floating-point numerical data among them. Case study on several types of linear and nonlinear MDOF system models shows that use of resource sharing in logic synthesis is crucial for effective application of FPGA to real-time dynamic simulation of structural response with time step interval of 1 ms.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.13-19
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• 2002

The plasma display panel with the electrode structure of new discharge AND gate was proposed and the driving system for experiment was developed. And discharge AND gate operation was verified. Discharge AND gate operated by the operation speed of 8${\mu}\textrm{s}$ and the operation margin of 20V. It was known to be able to control the discharge of the adjoining scan electrode accurately. Because this method uses the DC discharge, the control of the discharge can be facilitated compared with conventional discharge AND gate. Moreover, because the input discharge and the output discharge of AND gate are separate, the display discharge can be prevented from passing AND gate. Therefore it is possible to app1y to the large screen plasma display. And the decrease of contrast ratio does not occur because the scanning discharge does not influence the picture quality.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.15-19
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• 2001

Current leakage is the major failure mode of semiconductor device characteristic failures. Conventionally, failures such as short circuit breaks and gate breakdowns have been analyzed and the detected causes have been reflected in the fabrication process. By using a wafer-level emission-leakage failure analysis method (in-line QC), we analyzed leakage mode failure, which is the major failure detected during the probe inspection process for LSIs, typically DRAMs and CMOS logic LSIs. We have thus developed a new technique that copes with the critical structural failures and random failures that directly affect probe yields.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.212-215
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• 2005

The needs of larger screen in mobile device would be increased as the time of ubiquitous and convergence is coming. And, the type of mobile device has been evolved from bar, slide to row. Recently, the study on the multi-display screen which has seamless gap between two display panel has been published, and moreover the System On Chip(SOC) design strategy of core chip has been the most promising Field-Programmable Gate Array(FPGA) technology in the display system. Therefore, in this paper, we proposed the design technique of SOC and evaluated the effectiveness with Very high speed Hardware Description Language(VHDL) Intellectual Property (IP) for the operation of multi display device driver. Also, This IP design would be to allow any kind of user interface in control system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.9A
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• pp.1101-1107
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• 2004

This paper presents an optimization algorithm and technique for designing parallel Cyclic Redundancy Check (CRC) circuit, which is most widely adopted for error detection A new heuristic algorithm is developed to find as many shared terms as possible, thus eventually to minimize the number and level of the exclusive-or logic blocks in parallel CRC circuits. 16-bit and 32-bit CRC generators are designed with different types of Programmable Logic Devices, and it has been found that our new algorithm and architecture significantly reduce the delay.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.3
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• pp.291-300
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• 2017

Quantum-dot cellular automata(QCA) is a computing model designed to be similar to cellular automata, and an alternative technology for next generation using high performance and low power consumption. QCA is undergoing various studies with recent experimental results, and it is one of the paradigms of transistors that can solve device density and interconnection problems as nano-unit materials. An XOR gate is a gate that operates so that the result is true when either one of the logic is true. The proposed XOR gate consists of five layers. The first layer consists of OR gates, the third and fifth layers consist of AND gates, and the second and fourth layers are designed as passages in the middle. The half adder consists of an XOR gate and an AND gate. The proposed half adder is designed by adding two cells to the proposed XOR gate. The proposed half adder consists of fewer cells, total area, and clock than the conventional half adder.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.1
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• pp.157-165
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• 2001

We analyzed the electrical characteristics of platinum silicide schottky junction to develope the voltage swing in Integrated Schottky Logic gates, and simulated the characteristics with the programs in this junctions. Simulation programs for analytic characteristics are the Medichi tool for device structure, Matlab for modeling and SUPREM V for fabrication process. The silicide junctions consist of PtSi and variable silicon substrate concentrations in ISL gates. Input parameters for simulation characteristics were the same conditions as process steps of the device farications process. The analitic electrical characteristics were the turn-on voltage, saturation current, ideality factor in forward bias, and has shown the results of breakdown voltage between actual characteristics and simulation characteristics in reverse bias. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height were decreased but saturation current and ideality factor were increased by substrates increased concentration variations.

• ETRI Journal
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• v.36 no.1
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.747-752
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• 2014

This paper relates 10% shrink from $0.13{\mu}m$ design for logic devices as well as input and output (I/O) circuits, different from the previous shrink methodologies which shrink only core device. Thin gate oxide was changed to decoupled plasma nitridation(DPN) oxide as a thin gate oxide (1.2V) to reduce the flicker noise, resulting in three to five times lower flicker noise than pre-shrink process. Unavoidable issue by shrink is capacitor for this normally metal insulator metal (MIM). To solve this issue, 20% higher unit MIM capacitor ($1.2fF/{\mu}m^2$) was developed and its performance were evaluated.