• Journal of the Korean Institute of Intelligent Systems
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• v.25 no.5
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• pp.444-450
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• 2015

The accuracy of small and low cost CCD camera is insufficient to provide data for precisely tracking unmanned aerial vehicles(UAVs). This study shows how UAV can hover on a human targeted tracking object by using CCD camera rather than imprecise GPS data. To realize this, UAVs need to recognize their attitude and position in known environment as well as unknown environment. Moreover, it is necessary for their localization to occur naturally. It is desirable for an UAV to estimate of his attitude by environment recognition for UAV hovering, as one of the best important problems. In this paper, we describe a method for the attitude of an UAV using image information of a maker on the floor. This method combines the observed position from GPS sensors and the estimated attitude from the images captured by a fixed camera to estimate an UAV. Using the a priori known path of an UAV in the world coordinates and a perspective camera model, we derive the geometric constraint equations which represent the relation between image frame coordinates for a marker on the floor and the estimated UAV's attitude. Since the equations are based on the estimated position, the measurement error may exist all the time. The proposed method utilizes the error between the observed and estimated image coordinates to localize the UAV. The Kalman filter scheme is applied for this method. its performance is verified by the image processing results and the experiment.

• Korean Association of Arts Management
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• no.49
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• pp.117-147
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• 2019

Many cities are utilizing their cultural capital as a means for urban regeneration and tourist attraction. Museums form an essential component in these culture-based urban regeneration efforts, the Guggenheim Bilbao being a frequently cited example of success. The United Arab Emirates (UAE) has benchmarked the Bilbao case study as they were looking for alternative income-generating industries in the post-oil era, embarking on a city-building project on the Saadiyat Island where resorts and cultural institutions of massive scale are being constructed. The Louvre Abu Dhabi and the Guggenheim Abu Dhabi were pursued under this scheme, aiming at attracting tourism and elevating their status in the region as a cultural capital. This study examines the political, economic, and cultural background behind the Saadiyat city project and the pending issues behind the construction of the Guggenheim Abu Dhabi. This study purports that besides funding and an ambitious plan, social and cultural developments in the region over time will be essential for a successful localization of a Western brand museum in the region.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.