• Journal of Advanced Marine Engineering and Technology
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• v.13 no.3
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• pp.48-55
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• 1989

The purpose of present study is to evaluate both the radiative heat loss from a flame and the local formation and oxidation rate of soot. The present paper describes a comprehensive mathematical model to deal with combustion and radiative heat transfer simultaneously. The involved radiative heat transfer model was based on the "heat ray tracing method" originally proposed by Hayasaka et al.. Some predicted results were compared with the experiments.periments.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.96.1-96.1
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• 2017

This presentation introduces anodizing science of typical valve metals of Al, Mg and Ti, based on the ionic transport through the andic oxide films in various electrolyte compositions. Depending on the electrolyte composition, metal ions and anions can migrate through the andic oxide film without its dielectric breakdown when point defects are present within the anodic oxide films under high applied electric field. On the other hand, if anodic oxide films are broken by local joule heating due to ionic migration, metal ions and anions can migrate through the broken sites and meet together to form new anodic films, known as plasma electrolytic oxidation (PEO) treatment. In this presentation, basics of conventional anodizing and PEO methods are introduced in detail, based on the ionic migration and movement mechanism through anodic oxide films by point defects and by local dielectric breakdown of anodic oxide films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.420-420
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• 2011

결정질 태양전지에서 고효율 달성을 위한 LBC(Local Back Contact) 구조의 중요성이 강조되고 있다. LBC 구조에서 후면 passivation 형성을 위한 SiNX layer를 PECVD로 형성 시, 실리콘 bulk 내로 H+ 원자가 침투하여 Boron과 결합하게 되면 Boron이 bulk 내에서 dopant로 작용을 하지 못하게 되어, 후면에서 p-층을 형성하고, 이는 VOC의 저하를 야기 시킨다. 본 연구에서는 LBC 구조에서 후면 passivation 시 bluk 내 B-H결합으로 인한 태양전지 특성 저하 문제를 해결하기 위해, SiNX를 증착하기 전에 얇은 산화막 barrier를 성장시켜 Bulk 내에 H+ 침투를 최소화 하였다. PECVD를 이용한 N2O 플라즈마 처리, HNO3 Wet Chemical Oxidation의 방법을 통해 substrate와 SiNX 사이에 얇은 oxide 층을 형성하였으며, 각각의 조건에 대해 lifetime 측정을 실시하였다. 그 결과 SiON/SiNx를 이용한 막의 lifetime이 $94.5{\mu}s$로 가장 우수하였고, Reference에 비해 25.4% 증가함을 확인할 수 있었다. 그러나 HNO3/SiNx에서는 30.6%, SiON에서는 84.3% 감소함을 확인하였다. Voc 측정 결과 또한 SiON/SiNx를 이용한 막이 670mV로 가장 우수함을 확인할 수 있었다. 본 연구를 통해 LBC구조에서 후면에 얇게 SiON/SiNx막을 형성함으로서 H+이온의 침투를 저지하여 후면 B-H결합을 막아 태양전지 특성 저하를 감소시키는 것을 확인할 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.308-314
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• 2017

Anodic film formation behavior of AZ31 Mg alloy was studied as a function of NaOH concentration in 1 M $Na_2CO_3$ + 0.5 M $Na_2SiO_3$ solution under the application of a constant anodic current density, based on the analyses of voltage-time curves, surface appearances and morphologies of the anodically formed PEO (plasma electrolytic oxidation) films. The anodic film formation voltage and its fluctuations became largely lowered with increasing added NaOH concentration in the solution. Two different types of film defects, large size dark spots indented from the original surface and locally extruded white spots, were observed on the PEO-treated surface, depending on the concentration of added NaOH. The large size dark spots appeared only when added NaOH concentration is less than 0.2 M and they seem to result from the local detachments of porous PEO films. The white spots were observed to be very porous and locally extruded and their size became smaller with increasing added NaOH concentration. The white spot defects disappeared completely when more than 0.8 M NaOH is added in the solution. Concludingly it is suggested that the presence of enough concentration of $OH^-$ ions in the carbonate and silicate ion-containing electrolyte can prevent local thickening and/or detachment of the PEO films on the AZ31 Mg alloy surface and lower the PEO film formation voltage less than 70 V.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.5
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• pp.647-654
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• 2004

This study examines the local oxidation chemistry of reduced sulfur compounds (RSC) in the urban air. The chemical conversion of RSC (such as DMS, $CS_2,\;H_2S,\;DMDS,\;and\;CH_3SH)\;to\;SO_2$ was modeled using a photochemical box model. For our model prediction of the RSC oxidation, measurements were carried out from an urban monitoring station in Seoul (37.6$^{\circ}$N, 127.0$^{\circ}$E), Korea for three separate time periods (Sep. 17~18; Oct 23; and Oct. 27~28, 2003). The results of our measurements indicated that DMS and $H_2S$ were the dominant RSC with their concentrations of 370${\pm}$140 and 110${\pm}$60 pptv, respectively. The conversion of DMDS to $SO_2$ can occur efficiently in comparison to other RSC, but it is not abundant enough to affect their cycles. The overall results of our study indicate that the photochemical conversion of the RSC can contribute ≶ 20% of the observed $SO_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.440-443
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• 2010

We report a top-down approach based on atomic force microscopy (AFM) local anodic oxidation for the fabrication of the nano-pattern field effect transistors (FETs). AFM anodic oxidation is relatively a simple process in atmosphere at room temperature but it still can result in patterns with a high spatial resolution, and compatibility with conventional silicon CMOS process. In this work, we study nano-pattern FETs for various cross-bar distance value D, from ${\sim}0.5\;{\mu}m$ to $1\;{\mu}m$. We compare the optical characteristics of the patterned FETs and of the reference FETs based on both 2-dimensional simulation and experimental results for the wavelength from 100 nm to 900 nm. The simulated the drain current of the nano-patterned FETs shows significantly higher value incident the reference FETs from ${\sim}1.7\;{\times}\;10^{-6}A$ to ${\sim}2.3\;{\times}\;10^{-6}A$ in the infrared range. The fabricated surface texturing of photo-transistors may be applied for high-efficiency photovoltaic devices.

• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.10-16
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• 2017

This article reports for the first time on the lateral growth of PEO (plasma electrolytic oxidation) films on Al1050 alloy by the application of anodic pulse current in an alkaline electrolyte. Generation of microarcs was observed at the edges initially and then moved towards the central region with PEO treatment time. Disc type PEO film islands with about $20{\mu}m$ diameter were formed first and they grew laterally by the formation of new disc type PEO films at the edge of pre-formed PEO islands. The PEO film islands were found to be interconnected completely and form a continuous PEO film when generation of small size microarcs are terminated at the central part of the specimen, resulting in very smooth surface with low surface roughness less than $1{\mu}m$ of $R_a$. Further PEO treatment after the complete interconnection of PEO films islands showed local thickening of PEO films by vertical growth. It is concluded that very smooth PEO film surface can be obtained by lateral growth mechanism rather than vertical growth of them.

• Transactions of the Korean hydrogen and new energy society
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• v.12 no.3
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• pp.231-238
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• 2001

Electrocatalytic activity of palladium for hydrogen oxidation and reduction was studied using AC impedance method. The system under study was arranged in electrolytic mode consisting of Pd electrode under study, Pt counter electrode and Nafion electrolyte between them. Two types of Pd electrodes were used - carbon-supported Pd (Pd/C) and Pd foil electrode. Pd/C anode contacting pure hydrogen showed a steady decrease of charge transfer resistance with the increase of anodic overpotential, which is an opposite trend to that found with Pd foil anode. But Pd foil cathode also exhibited a decrease of the resistance with the increase of cathodic overpotential. The relationship between imposition of overpotential and subsequent change of the charge transfer resistance is determined by the ratio of the rate of faradaic process to the rate of mass transportation; if mass transfer limitation holds, increase of overpotential accompanies the increase of charge transfer resistance. Regardless of the physical type of Pd electrode, the anode contacting hydrogen/oxygen gas mixture did not reveal any independent arc originated from local anodic oxygen reduction.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.212-216
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• 1997

A new metal tip fabrication process for low voltage operation is reported in this paper. The key element of the fabrication process is that isotropic silicon etching and oxidation process used in silicon tip fabrication is utilized for gate hole size reduction and gate oxide layer. A metal FEA with 625 tips was fabricated in order to demonstrate the validity of the new process and submicron gate apertures were successfully obtained from originally 1.7$\mu\textrm{m}$ diameter mask. The emission current above noise level was observed at the gate bias of 50V. The required gate voltage to obtain the anode current of 0.1${\mu}\textrm{A}$/tip was 74V and the emission current was stable above 2${\mu}\textrm{A}$/tip without any disruption. The local field conversion factor and the emitting area were calculated as 7.981${\times}$10\ulcornercm\ulcorner and 3.2${\times}$10\ulcorner$\textrm{cm}^2$/tip, respectively.