• 제목/요약/키워드: Load-pull

검색결과 272건 처리시간 0.022초

펄스방전 그라운드 앵커의 확공 특성에 관한 연구 (Expansion Ratio of Pulse Power Underreamed Anchor)

  • 김낙경;주용선;김성규;서효균;김선주
    • 한국지반공학회:학술대회논문집
    • /
    • 한국지반공학회 2009년도 춘계 학술발표회
    • /
    • pp.1107-1112
    • /
    • 2009
  • Ground anchor should not be used in soft clay, because anchor resistance can not be guaranteed. However, there is a way to increase the capacity of anchors. The pulse powered anchor is an underreamed anchor by using high voltage electrokinetic pulse energy. In this study, a series of field test were carried out in order to find expansion rate related in number of pulse charge. and Anchor pull-out tests were performed at the Geotechnical Experimentation Site at Sungkyunkwan University in Suwon, Korea. Data were analyzed in order to define a relation between expansion rate and ultimate pullout load.

  • PDF

Pull-Out Behaviour of Hooked End Steel Fibres Embedded in Ultra-high Performance Mortar with Various W/B Ratios

  • Abdallah, Sadoon;Fan, Mizi;Zhou, Xiangming
    • International Journal of Concrete Structures and Materials
    • /
    • 제11권2호
    • /
    • pp.301-313
    • /
    • 2017
  • This paper presents the fibre-matrix interfacial properties of hooked end steel fibres embedded in ultra-high performance mortars with various water/binder (W/B) ratios. The principle objective was to improve bond behaviour in terms of bond strength by reducing the (W/B) ratio to a minimum. Results show that a decrease in W/B ratio has a significant effect on the bond-slip behaviour of both types of 3D fibres, especially when the W/B ratio was reduced from 0.25 to 0.15. Furthermore, the optimization in maximizing pullout load and total pullout work is found to be more prominent for the 3D fibres with a larger diameter than for fibres with a smaller diameter. On the contrary, increasing the embedded length of the 3D fibres did not result in an improvement on the maximum pullout load, but increase in the total pullout work.

기계적 프레스 접합의 공정 및 강도 평가 (Process and Strength Evaluation of Mechanical Press Joining)

  • 이상훈;김호경
    • 한국안전학회지
    • /
    • 제26권4호
    • /
    • pp.1-6
    • /
    • 2011
  • New methods for joining sheet of metal are being sought. One of the most promising methods is MPJ (mechanical press joining). It has been used in thin metal work because of its simple process and relative advantages over other methods, as it requires no fasteners such as bolts or rivets, consumes less energy than welding, and produces less ecological problems than adhesive methods. In this study, the joining process and static behavior of single overlap joints has been investigated. During fixed die type joining process for SPCC plates, the optimal applied punching force was found. The maximum tensile-shear strength of the specimen produced at the optimal punching force was 1.75 kN. The FEM analysis result on the tensile-shear specimen showed the maximum von-Mises stress of 373 MPa under the applied load of 1.7 kN, which is very close to the maximum tensile strength of the SPCC sheet(= 382 MPa). This suggests that the FEM analysis is capable of predicting the maximum tensile load of the joint.

Improving support performances of cone bolts by a new grout additive and energy absorber

  • Komurlu, Eren
    • Advances in materials Research
    • /
    • 제11권3호
    • /
    • pp.237-250
    • /
    • 2022
  • The cone bolts with expanded front ends supply improved anchoring performances and increase energy absorbing capacities due to ploughing in the grouted drills. Within this study, use of a novel energy absorber for the cone bolt heads were investigated to assess its design in terms of supplying high support performances. Additionally, different grout material designs were tested to investigate whether the energy absorption capacities of the rock bolts can be improved using a silicone based thermoset polymer (STP) additive. To determine load bearing and energy absorption capacities, a series of deformation controlled pull-out tests were carried out by using bolt samples grouted in rock blocks. According to the results obtained from this study, maximum load bearing capacities of cone bolts are similar and mostly depend on the steel material strength, whereas the energy absorption capacity was determined to significantly vary in accordance with the displacement limits of the shanks. As a result of using STP additive and new polyamide absorber rings, displacement limits without the steel failure increase. The STP additive was found to improve the energy absorption capacities of grouted cone bolts. The absorber rings designed within this study were also assessed to be highly effective and able to double up the energy absorption capacities of the cone bolts.

단결정 실리콘 TFT Cell의 적용에 따른 SRAM 셀의 전기적 특성 (The Electrical Characteristics of SRAM Cell with Stacked Single Crystal Silicon TFT Cell)

  • 이덕진;강이구
    • 한국컴퓨터산업학회논문지
    • /
    • 제6권5호
    • /
    • pp.757-766
    • /
    • 2005
  • There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

  • PDF

Stacked Single Crystal Silicon TFT Cell의 적용에 의한 SRAM 셀의 전기적인 특성에 관한 연구 (Electrical Characteristics of SRAM Cell with Stacked Single Crystal Silicon TFT Cell)

  • 강이구;김진호;유장우;김창훈;성만영
    • 한국전기전자재료학회논문지
    • /
    • 제19권4호
    • /
    • pp.314-321
    • /
    • 2006
  • There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

반도체 스위치를 이용한 양방향 고압 펄스 발생기 (Bi-polar High-voltage Pulse Generator Using Semiconductor switches)

  • 김종현;류명효;정인화;;김종수;임근희
    • 전력전자학회:학술대회논문집
    • /
    • 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
    • /
    • pp.291-293
    • /
    • 2003
  • A semiconductor switch-based fast hi-polar high voltage pulse generator is proposed in this paper The proposed pulse system is made of a thyristor based-rectifier, DC link capacitor, a push-pull resonant inverter, a high voltage transformer. secondary capacitor, a high voltage IGBT & diode stacks, and a variable capacitor. The proposed system makes hi-polar high voltage sinusoidal waveform using resonance between leakage inductance of the transformer and secondary capacitor and transfers energy to output load at maximum of the secondary capacitor voltage. Compared to previous hi-polar high voltage pulse power supply using nonlinear transmission line, the proposed pulse power system using only semiconductor switches has simple structure and gives high efficiency

  • PDF

$Al_2O_3$-33Vol.% $SiC_w$의 고온피로에 미치는 피로하중주파수의 영향 (Fatigue Frequency Effect of High Temperature Fatigue Fracture Behavior of $Al_2O_3$-33Vol.% $SiC_w$)

  • 김송희
    • 한국세라믹학회지
    • /
    • 제28권10호
    • /
    • pp.785-792
    • /
    • 1991
  • An investigation of the crack propagation behavior of Al2O3-33Vol.% SiCw at 140$0^{\circ}C$ was conducted with various loading frequencies. Higher crack propagation was observed in lower frequency and higher load ratios. Interface sliding fracture due to glassy phase from the oxidation of SiCw and cavitation along grain boundary of diffusional creep appeared to be the main mechanism of fatigue fracture in slower crack propagation while interface sliding and whisker pull out aided by glassy phase formation played main role of fatigue fracture for higher crack growth condition. The frequency effect on deformation behavior was discussed with a Maxwell model.

  • PDF

자연친화적인 보강토 옹벽의 철판망 gabion 보강재 타당성 분석 (A Feasibility Analysis on Steel Net Gabion Reinforcement of Reinforced Earth-retaining Wall)

  • 정대석
    • 한국환경과학회지
    • /
    • 제17권2호
    • /
    • pp.135-140
    • /
    • 2008
  • Steel net gabion is eco-friendly retaining wall structure showing favorable ability to overcome construction and environmental restriction and also to resist corrosion, chemical attack and degradation. This paper is dealt with the applicability of gabion metal net as a substitution of existing strengthening material. Pull out test was carried out to verify the applicability of gabion metal net. According to results, the increase of surcharge loading and horizontal load resulted in a yield of metal net. The stress at the time of yield was in the range of elasticity. Accordingly, gabion metal net can be substituted for existing geogrid and there is a need for experiment and analysis of arrangement direction and durability of gabion steel net.

NOD 시스템에서 오디오와 비디오 데이터 Push에 따른 Precaching 연구 (A Study on Precaching according to Push Technology for Audio and Video Data in NOD(News On Demand) System)

  • 박성호;김광문;송기욱;정기동
    • 한국멀티미디어학회:학술대회논문집
    • /
    • 한국멀티미디어학회 1998년도 춘계학술발표논문집
    • /
    • pp.323-327
    • /
    • 1998
  • 컴퓨터와 통신망 기술의 발전으로 많은 언론 기관에서 전자신문 서비스를 제공하고 있다. 그러나 현재 서비스되는 전자신문은 텍스트 위주의 정적인 정보를 주고 서비스 하며, 사용자가 필요한 정보를 찾아 다니는 pull 기술을 기반으로 서비스한다. 그리고 사용자 맞춤 기능을 제공하기 못하므로, 불필요한 정보를 사용자에게 전송함으로써 시스템 자원을 낭비하는 단점을 가지고 있다. 본 논문에서는 멀티미디어 데이터를 지원하는 NOD(News On Demand)시스템에서 텍스트 데이터 뿐아니라 오디오/비디오 데이터를 push 하므로써 서버의 load를 분배시키고 사용자에게 실시간성을 제공하는 NOD 분배 서버를 설계하고 프로토타입을 구현하였다. 특히 본 논문에서는 대용량 데이터인 오디오/비디오 데이터를 사용자 시스템으로 Push할 때, 사용자 시스템의 디스크 공간상태 등을 고려하여 실시간성을 유지할 수 있는 적정 Push 량을 시뮬레이션을 통해 측정하였다.

  • PDF