• 제어로봇시스템학회:학술대회논문집
• /
• 2005.06a
• /
• pp.158-163
• /
• 2005

Competitive electricity markets necessitate equitable methods for allocating transmission usage in order to set transmission usage charges and congestion charges in an unbiased and an open-accessed basis. So in competitive markets it is usually necessary to trace the contribution of each participant to line usage, congestion charges and transmission losses, and then to calculate charges based on these contributions. A UPFC offers flexible power system control, and has the powerful advantage of providing, simultaneously and independently, real-time control of voltage, impedance and phase angle, which are the basic power system parameters on which sys-tem performance depends. Therefore, UPFC can be used efficiently and flexibly to optimize line utilization and increase system capability and to enhance transmission stability and dampen system oscillations. In this paper, a mathematical approach to allocate the contributions of system users and UPFCs to transmission system usage is presented. The paper uses a dc-based load flow modeling of UPFC-inserted transmission lines in which the injection model of the UPFC is used. The relationships presented in the paper showed modified distribution factors that modeled impact of utilizing UPFCs on line flows and system usage. The derived relationships show how bus voltage angles are attributed to each of changes in generation, injections of UPFC, and changes in admittance matrix caused by inserting UPFCs in lines. The relationships derived are applied to two test systems. The results illustrate how transmission usage would be affected when UPFC is utilized. The relationships derived can be adopted for the purpose of allocating usage and payments to users of transmission network and owners of UPFCs used in the network. The relationships can be modified or extended for other control devices.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.11
• /
• pp.2479-2485
• /
• 2013

In this paper, we present a design for solid-state radar SSPA with sequential bias. We apply to variable extension pulse generator to eliminate signal distortion which is caused by bias rising/falling delay of power amplifier. There is an optimum impedance matching circuit to have high efficiency of GaN-power device by measuring microwave characteristics through load-pull method. The designed SSPA is consisted of pre-amplifier, drive-amplifier and main-amplifier as a three stages to apply for X-Band solid-state radar. Thereby we made a 200W SSPA which has output pulse maximum power shows 53.67dBm and its average power is 52.85dBm. The optimum design of transceiver module for solid-state pulse compression radar which is presented in this dissertation, it can be available to miniaturize and to improve the radar performances through additional research for digital radar from now on.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.12
• /
• pp.3475-3481
• /
• 2014

This paper describes how primary contaminants in ambient air affect the performance of the cathode in fuel cell electric vehicle applications. The effect of four atmospheric pollutants ($SO_2$, $NH_3$, $NO_2$, and CO) on cathode performance was investigated by air impurity injection and recovery test under load. Electrochemical analysis via polarization and electrochemical impedance spectroscopy was performed for various concentrations of contaminants during the impurity test in order to determine the origins of performance decay. The variation in cell voltage derived empirically in this study and data reported in the literature were normalized and juxtaposed to elucidate the relationship between impurity concentration and performance. Mechanisms of cathode degradation by air impurities were discussed in light of the findings.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.12 s.115
• /
• pp.1240-1248
• /
• 2006

This paper presents an UHF band(911 MHz) RFID tag antenna which has near-isotropic radiation pattern and easy conjugate impedance matching characteristics to any commercial chips of usual practice through the application of an inductively-coupled feeding. The proposed antenna of compact size $40{\times}46mm\;(0.12{\times}0.14{\lambda})$ has, at normal incidence, the maximum RCS of $-18.5dBm^2$ and the 3 dB RCS bandwidth of 9 MHz(1 %) in case of short chip load. It has the maximum and minimum RCS' of $-16.9dBm^2\;and\;-21.4dBm^2$ depending on the incident angles. The difference of about 4.5 dB is relatively small compared with that (about 70 dB) of a pure dipole antenna. The designed antenna has been fabricated and its RCS' have been measured varying the angles of incidence. The measured RCS' have been found to have good agreement with the simulated ones.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.1
• /
• pp.84-87
• /
• 2016

In this paper, a receiver for wireless power transfer is proposed. The receiver consists of a 100 W rectifier in 1.8 MHz frequency band, and a constant current charger. In particular, two kinds of protection circuits are installed in the rectifier. They are a over-voltage protection circuit which block the input voltages greater than 30 V and a active-dummy load which maintains the receiver input impedance by automatically consuming the remaining input power. The constant current charger is designed to charge the battery with a charging current of up to 1 A. A wireless charging system is fabricated using the proposed receiver. The system is composed of a 130 W transmitter, two magnetic resonator, and proposed receiver for charging a 48 V Li-Ion battery using the coupled magnetic resonance method. By the measurement result, the system efficiency is about 54 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.1
• /
• pp.50-59
• /
• 2016

This work shows that the design and test results of a power amplifier(PA) with broadband and high linearity for 4G applications in $0.11{\mu}m$ CMOS process. A 1:2-transformer is designed for load impedance matching of PA and a inter-stage matching is implemented for a linearity. A designed PA achieves more than 27.3 dBm of linear output power and 26.1 % of power-added efficiency(PAE) under an adjacent channel leakage ratio(ACLR) of -30 dBc for a LTE 16-QAM 10 MHz signal with a carrier frequency range of 1.8 to 2.3 GHz.

• Journal of the Korean Society of Marine Environment & Safety
• /
• v.21 no.6
• /
• pp.770-777
• /
• 2015

Recently, due to the rapid development of Power Electronics, the usage of Non Linear Load variable frequency drivers (VFDs) is increasing in the electric propulsion vessels and offshore plants. And harmonics which is generated by the variable frequency drives is an important issue should be solved. Ac line reactors and dc link reactors are widely used in variable frequency drives to improve the drive performance such as reducing input current harmonics, elevating input power factor, and protecting the drives from surges, etc. The effectiveness of both types of reactors in reducing input harmonics is affected by the loading of the drives and the system source impedance. And it considered that inductance of DC link reactors should be about 1.7 times of AC line reactors for same effect. The rules to evaluate the needs and effectiveness using ac line or dc link reactors are proposed for practical appications. In this paper, a simulation is performed to investigate of such factors using software PSIM.

• Journal of electromagnetic engineering and science
• /
• v.14 no.4
• /
• pp.393-398
• /
• 2014

A highly efficient dual-mode linear CMOS stacked-FET power amplifier (PA) is implemented for 3G UMTS and 4G LTE handset applications. High efficiency is achieved at a backed-off output power ($P_{out}$) below 12 dBm by employing an active-bypass amplifier, which consumes very low quiescent current and has high load-impedance. The output paths between high- and low-power modes of the PA are effectively isolated by using a bypass switch, thus no RF performance degradation occurs at high-power mode operation. The fabricated 900 MHz CMOS PA using a silicon-on-insulator (SOI) CMOS process operates with an idle current of 5.5 mA and shows power-added efficiency (PAE) of 20.5%/43.5% at $P_{out}$ = 12.4 / 28.2 dBm while maintaining an adjacent channel leakage ratio (ACLR) better than -39 dBc, using the 3GPP uplink W-CDMA signal. The PA also exhibits PAE of 35.1% and $ACLR_{E-UTRA}$ of -33 dBc at $P_{out}$ = 26.5 dBm, using the 20 MHz bandwidth 16-QAM LTE signal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.21 no.12
• /
• pp.1447-1453
• /
• 2010

In this paper, the design and the fabrication of dual-band bandpass filter using two dual-mode resonators is presented. Dual-mode resonator using a short stub is miniaturized by inter-digital capacitor and stepped impedance. Two dual mode resonators are designed to have different resonant frequencies, one for the lower passband and the other for the upper passband. Transmission zero is positioned at low or high rejection bands with a sharp skirt characteristic. Dual-band operation can be achieved using dual feeding structure. For WLAN, the proposed filter at 2.45/5.25 GHz is designed and fabricated. The size of the filter is as compact as 1$10.83\;mm{\times}5.3\;mm$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.11
• /
• pp.1019-1022
• /
• 2016

In this paper, a 2~16 GHz GaN wideband power amplifier MMIC s designed and fabricated using the nonuniform power amplifier design technique that utilizes drain shunt capacitors to simultaneously provide each transistor with the optimum load impedance and phase balance between input and output transmission lines. The power amplifier MMIC chip that is fabricated using the $0.25{\mu}m$ GaN HEMT foundry process of Win Semiconductors occupies an area of $3.9mm{\times}3.1mm$ and shows a linear gain of larger than 12 dB and an input return loss of greater than 10 dB. Under a continuous-wave mode, it has a saturated output power of 36.2~38.5 dBm and a power-added efficiency of about 8~16 % in 2 to 16 GHz.