• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.4
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• pp.878-885
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• 2008

The FPDs(Flat Panel Displays) such as LCD(Liquid Crystal Display) and PDP(Plasma Display Panel) and OLED(Organic Light Emitting Diode), recently, have been substituted for CRT(Cathode Ray Tube) displays because they have a convex surface, small volume, light weight and lower electric power consumption. The productivity of FPDs is greatly dependent on the area of thin glass panel with 0.6 - 0.8mm thickness because FPDs are manufactured by cutting a large-scaled thin glass panel with patterns to the required product dimensions. So FPD's industries are trying to increase the area of thin glass panel. For example, the thin glass panel size of the 8th generation is 2,200mm in width, 2,600mm in length and 0.7mm in thickness. The air flows both in the thin glass panel and in the porous PE-plate surface were modeled and analyzed, from which a working condition was estimated. The thin glass panel on the porous PE-plate surface with self-lubricating characteristics was investigated and compared with that on the square duct floating bar surface with many holes of 1mm diameter when the thin glass panel contacts the floating bar surface due to malfunction of electric power supply.

• Journal of Technologic Dentistry
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• v.45 no.2
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• pp.31-38
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• 2023

Purpose: This in vitro study aimed to compare the trueness of 3-unit fixed dental provisional prostheses (FDPs) fabricated by three different additive manufacturing and subtractive manufacturing procedures. Methods: A reference model with a maxillary left second premolar and the second molar prepped and the first molar missing was scanned for the fabrication of 3-unit FDPs. An anatomically shaped 3-unit FDP was designed on computer-aided design software. 10 FDPs were fabricated by subtractive (MI group) and additive manufacturing (stereolithography: SL group, digital light processing: DL group, liquid crystal displays: LC group) methods, respectively (N=40). All FDPs were scanned and exported to the standard triangulated language file. A three-dimensional analysis program measured the discrepancy of the internal, margin, and pontic base area. As for the comparison among manufacturing procedures, the Kruskal-Wallis test and the Mann-Whitney test with Bonferroni correction were evaluated statistically. Results: Regarding the internal area, the root mean square (RMS) value of the 3-unit FDPs was the lowest in the MI group (31.79±6.39 ㎛) and the highest in the SL group (69.34±29.88 ㎛; p=0.001). In the marginal area, those of the 3-unit FDPs were the lowest in the LC group (25.39±4.36 ㎛) and the highest in the SL group (48.94±18.98 ㎛; p=0.001). In the pontic base area, those of the 3-unit FDPs were the lowest in the LC group (8.72±2.74 ㎛) and the highest in the DL group (20.75±2.03 ㎛; p=0.001). Conclusion: A statistically significant difference was observed in the RMS mean values of all the groups. However, in comparison to the subtractive manufacturing method, all measurement areas of 3-unit FDPs fabricated by three different additive manufacturing methods are within a clinically acceptable range.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.529-529
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• 2006

Several laboratories worldwide have demonstrated the feasibility of producing amorphous silicon thin film transistor (TFT) arrays at temperatures that are sufficiently low to be compatible with flexible foils such as stainless steel or high temperature polyester. These arrays can be used to fabricate flexible high information content display prototypes using a variety of different display technologies. However, several questions must be addressed before this technology can be used for the economic commercial production of displays. These include process optimization and scale-up to address intrinsic electrical instabilities exhibited by these kinds of transistor device, and the development of appropriate techniques for the handling of flexible substrate materials with large coefficients of thermal expansion. The Flexible Display Center at Arizona State University was established in 2004 as a collaboration among industry, a number of Universities, and US Government research laboratories to focus on these issues. The goal of the FDC is to investigate the manufacturing of flexible TFT technology in order to accelerate the commercialization of flexible displays. This presentation will give a brief outline of the FDC's organization and capabilities, and review the status of efforts to fabricate amorphous silicon TFT arrays on flexible foils using a low temperature process. Together with industrial partners, these arrays are being integrated with cholesteric liquid crystal panels, electrophoretic inks, or organic electroluminescent devices to make flexible display prototypes. In addition to an overview of device stability issues, the presentation will include a discussion of challenges peculiar to the use of flexible substrates. A technique has been developed for temporarily bonding flexible substrates to rigid carrier plates so that they may be processed using conventional flat panel display manufacturing equipment. In addition, custom photolithographic equipment has been developed which permits the dynamic compensation of substrate distortions which accumulate at various process steps.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.647-650
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• 2006

Low temperature polycrystalline silicon (LTPS) technology using a high power laser have been widely applied to thin film transistors (TFTs) for liquid crystal, organic light emitting diode (OLED) display, driver circuit for system on glass (SOG) and static random access memory (SRAM). Recently, the semiconductor industry is continuing its quest to create even more powerful CPU and memory chips. This requires increasing of individual device speed through the continual reduction of the minimum size of device features and increasing of device density on the chip. Moreover, the flat panel display industry also need to be brighter, with richer more vivid color, wider viewing angle, have faster video capability and be more durable at lower cost. Kornic Systems Co., Ltd. developed the $KORONA^{TM}$ LTP/GLTP series - an innovative production tool for fabricating flat panel displays and semiconductor devices - to meet these growing market demands and advance the volume production capabilities of flat panel displays and semiconductor industry. The $KORONA^{TM}\;LTP/GLTP$ series using DPSS laser and XeCl excimer laser is designed for the new generation of the wafer & FPD glass annealing processing equipment combining advanced low temperature poly-silicon (LTPS) crystallization technology and object-oriented software architecture with a semistandard graphical user interface (GUI). These leading edge systems show the superior annealing ability to the conventional other method. The $KORONA^{TM}\;LTP/GLTP$ series provides technical and economical benefits of advanced annealing solution to semiconductor and FPD production performance with an exceptional level of productivity. High throughput, low cost of ownership and optimized system efficiency brings the highest yield and lowest cost per wafer/glass on the annealing market.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.450-450
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• 2012

In recent days, advances in ZnO-based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). In particular, the development of high-mobility ZnO-based channel materials has been proven invaluable; thus, there have been many reports of high-performance TFTs with oxide semiconductor channels such as ZnO, InZnO (IZO), ZnSnO (ZTO), and InGaZnO (IGZO). The reliability of oxide TFTs can be improved by examining more stable oxide channel materials. In the present study, we investigated the effects of an ALD-deposited water vapor permeation barrier on the stability of ZnO and HfZnO (HZO) thin film transistors. The device without the water vapor barrier films showed a large turn-on voltage shift under negative bias temperature stress. On the other hand, the suitably protected device with the lowest water vapor transmission rate showed a dramatically improved device performance. As the value of the water vapor transmission rate of the barrier films was decreased, the turn-on voltage instability reduced. The results suggest that water vapor related traps are strongly related to the instability of ZnO and HfZnO TFTs and that a proper combination of water vapor permeation barriers plays an important role in suppressing the device instability.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1750-1752
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• 1999

An active-matrix liquid crystal display (LCD) using thin film transistors (TFTs) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the sate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the new set of capacitance models on the pixel operations can be effectively analyzed. The set of models which is adopted from VLSI interconnections calculate more precise capacitance. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1049-1052
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• 2004

In general, contrary to the CRTs with impulsive emission, liquid crystal displays have motion artifacts such as blurring. ghost image, decrease of dynamic CR(contrast ratio), and stroboscopic motion due to hold type driving method. In this paper, to improve motion picture quality of LCDs. impulsive driving method of black data insertion was applied to the OCB mode which is well known for its fast LC response time and wide viewing angle properties. Subject evaluation was carried out with CRT, TN, SIPS(Super IPS). and impulsive driving OCB. Moving picture image quality near CRT was obtained in impulsive OCB driving mode