• Applied Chemistry for Engineering
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• v.35 no.4
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• pp.303-308
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• 2024

Currently, lithium secondary batteries have been used as medium- or large-sized energy sources such as electric vehicles and energy storage system (ESS) due to their high energy and eco-friendly characteristics. Currently commercialized lithium secondary batteries do not fully meet the demands for high energy density and safety. Many studies on solid electrolytes are being conducted to satisfy these requirements. In order to commercialize a solid electrolyte, it is important to supplement the low ion conductivity and high interface resistance with an electrode compared to the organic liquid electrolyte. Therefore, in this study, oligo(3,4-ethylenedioxythiophene (EDOT)) is added to poly(vinyl alcohol) (PVA), which is a polymer matrix with ion conductivity and sticky characteristics, to decrease the interfacial resistance with the same type of polythiophene (PTh)-based electrode. In addition, the addition of porous silicon dioxide (SiO₂) filler improves lithium salt dissociation ability and increases ionic conductivity. And the electrochemical stability of the solid electrolyte, which has been lowered due to additives, is improved by introducing a cross-linked structure using boric acid (BA).

• Journal of Magnetics
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• v.11 no.4
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• pp.195-207
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• 2006

The recently published and new results on design and fabrication of magnetophotonic crystals of different dimensionality are surveyed. Coupling of polarized light to 3D photonic crystals based on synthetic opals was studied in the case of low dielectric contrast. Transmissivity of opals was demonstrated to strongly depend on the propagation direction of light and its polarization. It was shown that in a vicinity of the frequency of a single Bragg resonance in a 3D photonic crystal the incident linearly polarized light excites inside the crystal the TE- and TM-eigen modes which passing through the crystal is influenced by Brags diffraction of electromagnetic field from different (hkl) sets of crystallographic planes. We also measured the faraday effect of opals immersed in a magneto-optically active liquid. It was shown that the behavior of the faraday rotation spectrum of the system of the opal sample and magneto-optically active liquid directly interrelates with transmittance anisotropy of the opal sample. The photonic band structure, transmittance and Faraday rotation of the light in three-dimensional magnetophotonic crystals of simple cubic and face centered cubic lattices formed from magneto-optically active spheres where studied by the layer Korringa-Kohn-Rostoker method. We found that a photonic band structure is most significantly altered by the magneto-optical activity of spheres for the high-symmetry directions where the degeneracies between TE and TM polarized modes for the corresponding non-magnetic photonic crystals exist. The significant enhancement of the Faraday rotation appears for these directions in the proximity of the band edges, because of the slowing down of the light. New approaches for one-dimensional magnetophotonic crystals fabrication optimized for the magneto-optical Faraday effect enhancement are proposed and realized. One-dimensional magnetophotonic crystals utilizing the second and the third photonic band gaps optimized for the Faraday effect enhancement have been successfully fabricated. Additionally, magnetophotonic crystals consist of a stack of ferrimagnetic Bi-substituted yttrium-iron garnet layers alternated with dielectric silicon oxide layers of the same optical thickness. High refractive index difference provides the strong spatial localization of the electromagnetic field with the wavelength corresponding to the long-wavelength edge of the photonic band gap.

• Resources Recycling
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• v.29 no.2
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• pp.69-77
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• 2020

With rapid increasing production and installation, recycling of photovoltaic modules has become the main issue. According to the research, the accumulation of waste modules will reach to 8600 tons in 2030. Moreover, Crystalline-silicon (c-Si) Photovoltaic modules account for more than 90% of the waste. C-Si PV modules contain 1.3% of weight of photovoltaic ribbon inside which contains the most of lead, tin and copper in the PV modules, which would cause environmental and humility problem. This study provided a valuable metal separation process for PV ribbons. Ribbons content 82.1% of Cu, 8.9% of Sn, 5.2% of Pb, and 3.1% of Ag. All of them were leached by 3M of hydrochloric acid in the optimal condition. Ag was halogenated to AgCl and precipitated. Cu ion was extracted and separated from Pb and Sn by Lix984N then stripped by 3M H2SO4. The effect of the optimal parameters of extraction was also studied in this essay. The maximum extraction efficiency of Cu ion was 99.64%. The separation condition of Pb and Sn were obtained by adjusting the pH value to 4 thought ammonia to precipitate and separate Pb and Sn. The recovery of Pb and Sn can reach 99%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.473-480
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• 1997

$\beta-SiC$powder with or without the addition of 1-3 wt% of $\beta-SiC$ whiskers (seeds) was hot-pressed at $1850^{\circ}C$ for 1 h using $Al_2O_3$ and $Y_2O_3$ as sintering aids. The hot-pressed materials were subsequently annealed at $1950^{\circ}C$ to enhance grain growth. The introduction of $\beta-SiC$ whiskers into $\beta-SiC$ does not affect the microstructure as well as mechanical properties significantly because the whiskers are not viable in the presence of liquid phase during hot-pressing. The strengths and fracture toughnesses of the hot-pressed and subsequently 5 h-annealed materials with 1 wt% $\beta-SiC$ whiskers and without $\beta-SiC$ whiskers were 465 MPa and 5.8 MPaㆍ$m^{1/2}$, and 451 MPa and 5.5 MPaㆍ$m^{1/2}$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.6-11
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• 2009

The electro-optical characteristics of the Liquid Crystal on Silicon (hereinafter "LCOS") micro-display on vertically alignment (VA) mode were studied with 3-dimensional LC code. 5 different cell gaps, such as 1.4 ${\mu}m$, 1.8 ${\mu}m$, 2.1 ${\mu}m$, 2.4 ${\mu}m$ and 2.8 ${\mu}m$, were selected. The reflectance-voltage (R-V) characteristics, distribution of reflected light, reflectance, optical fill factor and contrast ratio were calculated and investigated depending on various cell gaps. Due to the surface anchoring effect, higher cell gap showed higher reflectance. However, considering the optical fill factor and contrast ratio, middle-height 2.1 ${\mu}m$ showed the best electro-optical characteristic. 0.7 inch Full-HD LCOS panels having same geometry and material property were fabricated. The reflected light intensity and contrast ratio were measured and the measured results were well-matched to the calculated results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.6
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• pp.235-240
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• 2003

In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.

• Macromolecular Research
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• v.12 no.2
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• pp.156-171
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• 2004

We describe the precision synthesis schemes of siloxane-containing polymers, i.e., the control of their molecular weight, stereoregularity, and higher-order structures. First, we found a new catalytic dehydrocoupling reaction of water with bis(dimethylsilyl)benzene to give poly(phenylene-disiloxane). Together with this reaction, we applied hetero-condensations to the synthesis of thermally stable poly(arylene-siloxane)s. The dehydrocoupling reaction was applied to the synthesis of syndiotactic poly(methylphenylsiloxane) and poly(silsesquioxane)s, which we also prepared by hydrolysis and deaminative condensation reactions. We discuss the tendency for loop formation to occur in the synthesis of poly(silsesquioxane) by hydrolysis, and provide comments on the design of functionality of the polymers produced. By taking advantage of the low energy barrier to rotation in the silicon-oxygen bond, we designed selective oxygen-permeable membrane materials and liquid crystalline materials. The low surface free energy of siloxane-containing systems allows surface modification of a blend film and the design of holographic grating materials.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.761-767
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• 1999

Poly-Si TFTs(polycrystalline silicon thin film transistors) fabricated on a low cost glass substrate have attracted a considerable amount of attention for pixel elements and peripheral driving circuits in AMLCS(active matrix liquid crystal display). In order to apply poly-Si TFTs for high resolution AMLCD, a high operating frequency and reliable circuit performances are desired. A new poly-Si TFT with CLBT(counter doped lateral body terminal) is proposed and fabricated to suppress kink effects and to improve the device stability. And this proposed device with BC(buried channel) is fabricated to increase ON-current and operating frequency. Although the troublesome LDD structure is not used in the proposed device, a low OFF-current is successfully obtained by removing the minority carrier through the CLBT. We have measured the dynamic properties of the poly-Si TFT device and its circuit. The reliability of the TFTs and their circuits after AC stress are also discussed in our paper. Our experimental results show that the BC enables the device to have high mobility and switching frequency (33MHz at $V_{DD}$ = 15 V). The minority carrier elimination of the CLBT suppresses kink effects and makes for superb dynamic reliability of the CMOS circuit. We have analyzed the mechanism in order to see why the ring oscillators do not operate by analyzing AC stressed device characteristics.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.242-255
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• 2008

In lithium-ion batteries(LIB), the development of electrolytes had mainly focused on the characteristics of lithium cobalt oxide($LiCoO_2$) cathode and graphite anode materials since the commercialization in 1991. Various studies on compatibility between electrode and electrolytes had been actively developed on their interface. Since then, as they try to adopt silicon and tin as anode materials and three components(Ni, Mn, Co), spinel, olivine as cathode materials for advanced lithium batteries, conventional electrolyte materials are facing a lot of challenges. In particular, requirements for electrolytes performance become harsh and complicated as safety problems are seriously emphasized. In this report, we summarized the research trend of electrolyte materials for the electrode materials of lithium rechargeable batteries.