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Effect of the Annealing Conditions on the Ferromagnetic Resonance of YIG Thin Film Prepared on GGG Substrate (Gd3Ga5O12 기판위에 성장된 Y3Fe5O12 박막의 열처리 조건에 따른 강자성 공명 특성 연구)

  • Lee, Yelim;Phuoc, Cao Van;Park, Seung-Young;Jeong, Jong-Ryul
    • Korean Journal of Materials Research
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    • v.25 no.12
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    • pp.703-707
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    • 2015
  • In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet ($Y_3Fe_5O_{12}$, YIG) thin film prepared on gadolinium gallium garnet ($Gd_3Ga_5O_{12}$, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to $1000^{\circ}C$. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the $800^{\circ}C$ annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

New lithography technology to fabricate arbitrary shapes of patterns in nanometer scale (나노미터 크기의 임의 형상을 제작하기 위한 새로운 리소그래피 기술)

  • 홍진수;김창교
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.3
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    • pp.197-203
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    • 2004
  • New lithography techniques are employed for the patterning of arbitrary shapes in nanometer scale. When, in the photolithography, the electromagnetic waves such as UV and X-ray are incident on the mask patterned in nanometer scale, the diffraction effect is unavoidable and degrades images of the mask imprinted on wafer. Only a convex lens is well-known Fourier transformer. It is possible to make the mask Fourier-transformed with the convex lens, even though the size of pattern on the mask is very large compared to the wavelength of electromagnetic wave. If the mask, modified according to new technique described in this paper, was placed at the front of the lens and was illuminated with laser beam, the nanometer-size patterns are only formed on the plane called Fourier transform plane. The new method presented here is quite simple setup and comparable with present and next generation lithographies such as UV/EUV photolithograpy and electron projection lithography when compared in attainable minimum linewidth. In this paper, we showed our theoretical research work in the field of Fourier optics, . In the near future, we are going to verify this theoretical work by experiments.

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Transmission Grating Formation in High Refractive-index Amorphous Thin Films Using Focused-Ion-Beam Lithography (접속이온빔 리소그라피를 이용한 고굴절 비정질 박막 투과 격자 형성)

  • Shin, Kyung;Kim, Jin-Woo;Park, Jeong-Il;Lee, Hyun-Yong;Lee, Young-Jong;Chung, Hong-Bay
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.1
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    • pp.6-10
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    • 2001
  • In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

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A Study on Characteristics of Temperature and Radicals in Laminar Non-premixed H2/N2 Flame Using LIPF and LRS (레이저 유도 선해리 형광법과 래일레이 산란법에 의한 층류 비예혼합 수소/질소 화염의 온도 및 라디칼 특성에 관한 연구)

  • Jin, Seong Ho;Park, Kyoung Suk;Kim, Gun Hong;Kim, Gyung Soo
    • Transactions of the Korean hydrogen and new energy society
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    • v.13 no.3
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    • pp.169-180
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    • 2002
  • Rayleigh scattering and laser induced predissociative fluorescence are used to obtain two-dimensional images of temperature and species concentration in a laminar non-premixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained at 248nm. Planar images of OH and $O_2$ with tunable KrF excimer laser which has a) $0.5cm^{-1}$ linewidth, b) 0.5nm tuning range, c) 150mJ pulse energy, and d) 20ns pulse width are obtained to determine spatial distributions of OH and $O_2$. The technique is based on planar laser induced predissociative fluorescence (PLIPF) in which collisional quenching is almost avoided because of the fast predissociation. Dispersed LIPF spectra of OH and $O_2$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_2$. OH and $O_2$ are excited on the $P_2$(8) and $Q_1$(11) line of the $A^2{\Sigma}^{+}({\nu}^{'}=3)-X^{2}{\Pi}({\nu}^{''}=o)$ band and R(17) line of the Schumann-Runge band $B^{3}{\Sigma}_{u}{^-}(\nu^{'}=0)-X^{3}{\Sigma}_{g}{^-}({\nu}^{''}=6)$, respectively. Fluorescence spectra of OH and Hot $O_2$ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

Harmonic mode locking of 'Figure-of-Eight' fiber soliton laser using regenerative phase modulation (재생형 위상 변조에 의한 '8'자 구조 광섬유 솔리톤 레이저의 고차 조화 모드록킹)

  • 윤승철;박희갑
    • Korean Journal of Optics and Photonics
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    • v.10 no.2
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    • pp.146-151
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    • 1999
  • We demonstrated a harmonic mode locking scheme that used regeneratie phase modulation to get a high and stable repetition rate in a figure-of-eight fiber soliton laser. From the detected beat spectra of the laser output, a sinusoidal clock freguency tone of 400 MHz, the 96th harmonics of the fundamental mode locking frequency, was extracted with a high Q filter and was used to drive the phase modulator, resulting in stable output of soliton pulse train synchronized with the modulation signal. Generated soliton pulses had FWHM pulsewidth of 930 fs and 3.1 nm linewidth, yielding pulsewidth-bandwidth product of 0.359 that was close to the transform limit. As the modulation frequency always followed the beat frequency of laser modes, stable harmonic mode locking was achieved without the adjustment of the cavity length, which has been commonly required in actively mode-locked lasers.

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Characteristics of two extended-cavity diode lasers phase-locked with a 9.2 CHz frequency offset (9.2 GHz 주파수 차이로 위상잠금된 두 외부 공진기 다이오드 레이저의 제작 및 특성 조사)

  • Kwon, Taek-Yong;Shin, Eun-Ju;Yoo, Dae-Hyuk;Lee, Ho-Sung;In, Min-Kyo;Cho, Hyuk;Park, Sang-Eon
    • Korean Journal of Optics and Photonics
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    • v.13 no.6
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    • pp.543-547
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    • 2002
  • We have constructed two extended-cavity diode lasers which are phase-locked with a 9.2 GHz frequency offset. We adopted a digital servo circuit for the phase-locking. The relative linewidth of the phase-locked lasers was less than 2 Hz. Using the measured beat spectrum, we found the carrier concentration to be about 93 %. We measured phase noise and relative frequency stability of the lasers. The Allan deviation at the gate time of 20 s was $2.7{\times}10^{-19}$.

The Crystallograpic and Magnetic Properties of EuFeO3 Doped with in ions (In 이온을 첨가한 $EuFeO_{3}$의 결정구조 및 자기적 성질)

  • 김정기;서정철;한은주
    • Journal of the Korean Magnetics Society
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    • v.4 no.4
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    • pp.335-339
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    • 1994
  • The crystallograpic and magnetic properties of $Eu(Fe_{1-x}In_{x})O_{3}$ (x=0, 0.03과 0.05) have been studied by the methods of X-ray diffraction, $M\"{o}ssbauer$ spectroscopy, and magnetic hysteresis measurement at room temperature. The X-ray results show that the samples have a crystal structure of orthorhombic and unit cell volume of the crystal with the exception of the sample of x=0 increases as increasing the In concentration. In the analysis assuming two sets of six-line of $M\"{o}ssbauer$ spectra, it is found that the magnetic hyperfine field in each of sets decreases increasing x. The linewidth of the absorption lines for the samples increased as increasing x. This implies that the data involve a sum of several hyperfine patterns which have intensity being proportional to $_{n}P_{z}(x)$, the probability of an environment with z such Fe neighbors. The magnetic hysteresis curves show decrease of $M_{s}$ and increase of $H_{c}$ of the samples with increasing x.

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Analysis of Process Parameters to Improve On-Chip Linewidth Variation

  • Jang, Yun-Kyeong;Lee, Doo-Youl;Lee, Sung-Woo;Lee, Eun-Mi;Choi, Soo-Han;Kang, Yool;Yeo, Gi-Sung;Woo, Sang-Gyun;Cho, Han-Ku;Park, Jong-Rak
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.100-105
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    • 2004
  • The influencing factors on the OPC (optical proximity correction) results are quantitatively analyzed using OPCed L/S patterns. ${\sigma}$ values of proximity variations are measured to be 9.3 nm and 15.2 nm for PR-A and PR-B, respectively. The effect of post exposure bake condition is assessed. 16.2 nm and 13.8 nm of variations are observed. Proximity variations of 11.6 nm and 15.2 nm are measured by changing the illumination condition. In order not to seriously deteriorate the OPC, these factors should be fixed after the OPC rules are extracted. Proximity variations of 11.4, 13.9, and 15.2 nm are observed for the mask mean-to-targets of 0, 2 and 4 nm, respectively. The decrease the OPC grid size from 1 nm to 0.5 nm enhances the correction resolution and the OCV is reduced from 14.6 nm to 11.4 nm. The enhancement amount of proximity variations are 9.2 nm corresponding to 39% improvement. The critical dimension (CD) uniformity improvement for adopting the small grid size is confirmed by measuring the CD uniformity on real SRAM pattern. CD uniformities are measured 9.9 nm and 8.7 nm for grid size of 1 nm and 0.5 nm, respectively. 22% improvement of the CD uniformity is achieved. The decrease of OPC grid size is shown to improve not only the proximity correction, but also the uniformity.

Characteristics of Polarization and Birefringence for Submicron a-Ge Thin Film on Quartz Substrate Formed by Focused-Ion-Beam (석영 기판 위에 집속 이온빔 기술에 의해 형성된 비정질 게르마늄 박막 미세 패턴의 편광 및 복굴절 특성)

  • Shin, Kyung;Ki, Jin-Woo;Park, Chung-Il;Lee, Hyun-Yong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.617-620
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    • 1999
  • In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

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High Power Switchable Dual-Wavelength Linear Polarized Yb-Dozped Fiber Laser around 1120 nm

  • Liu, Xiaojuan;Huang, Bangcai;Wei, Gongxiang;Han, Kezhen;Huang, Yan;Liu, Fangfang
    • Journal of the Optical Society of Korea
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    • v.20 no.6
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    • pp.716-721
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    • 2016
  • A single-and dual-wavelength switchable polarized Yb-doped double-clad fiber laser around 1120 nm based on a pair of fiber Bragg gratings (FBGs) is demonstrated. The polarization-maintaining (PM) linear cavity is composed of a double clad PM Yb-doped fiber (YDF) and a pair of PM FBGs. The laser can operate in stable dual-wavelength or wavelength-switching modes due to the polarization hole burning (PHB) and the spatial hole burning (SHB) enhanced by the PM linear cavity. In dual-wavelength operation, the two orthogonally polarized wavelengths are centered at 1118.912 nm and 1119.152 nm, with an interval of 0.24 nm and a signal to noise ratio (SNR) of 35 dB. The maximum output power is 14.67 W when the launched LD pump is 24 W corresponding to an optical efficiency of 61.1%. The lasing lines switchover may be realized by adjusting the polarization controller (PC) fitted in the cavity. The two single-wavelengths are 1118.912 nm and 1119.152 nm. When the injected LD pump is 24 W, the highest output powers are 7.68 W and 8.64 W corresponding to optical efficiencies of 32% and 36% respectively. The spectral linewidth of the lasing lines are 0.075 nm and 0.07 nm, and the average numerical values of PER aredB and 19.9 dB, respectively.