• Title/Summary/Keyword: Linewidth

검색결과 206건 처리시간 0.043초

Observation of the Electromagnetically Induced Transparency and Dispersion-like Structure in Trapped Cs Atoms

  • Kim, Kyoung-Dae;Kwon, Mi-Rang;Kim, Jung-Bog;Moon, Han-Seb
    • Journal of the Optical Society of Korea
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    • 제5권4호
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    • pp.131-135
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    • 2001
  • We report experiemtnal results demonstrating the electromagnetically induced transparency (EIT) in trapped Cs atoms. EIT occurs at the Λ-type configuration where the re0-pumping laser simultaneously plays a role as the coupling laser in the presence of a magneto-optical trapping and weak magnetic fields. Dependences of EIT signal on both the intensity and the detuning of the coupling laser were investigated. Linear absorption spectra for cold cesium atoms in the magneto-optical trap have been observed and shown the pronounced dispersion-like structure with sub-natural linewidth of 1 MHz due to the cooling laser.

파장가변 Ti:sapphire 레이저의 협대역 특성 (Spectrum Narrowing Characteristics of a Tunable Ti:sapphire Laser)

  • 이용우;이주희
    • 한국광학회지
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    • 제6권1호
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    • pp.16-20
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    • 1995
  • 본 논문은 Nd:YAG 레이저의 제2고조파로 펄스 펌핑된 파장가변형 Ti:sapphire 레이저의 협대역 특성을 연구하였다. Ti:sapphire 레이저는 rod의 양단에서 펌핑하여 균일한 여기 분포를 갖도록 하였고, 공진기의 격자를 선형적으로 제어하여 705-835nm의 넓은 범위에서 연속적인 파장 선택을 실현하였다. 이때 회절격자 제어계의 분해각은 0.27"/pulse이다. 중심파장 790nm때 출력 에너지는 $380{\mu}J$, 레이저 출력이 최대 출력의 50% 이상되는 파장 범위는 730-825nm, 스펙트럼 선폭은 $0.13cm_{-1}$, 빔 발산각은 1.2mrad을 각각 얻었다.

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미세 선가공을 위한 레이저 변수 제어 (Control of Laser Parameter for Precision Line Processing)

  • 김영섭;최은서;신용진
    • 한국레이저가공학회지
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    • 제10권1호
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    • pp.11-17
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    • 2007
  • We presented the proper laser processing conditions for the capillary line marking, which could be applied for the fabrication of injection needles. With changing the parameters such as lamp current, duty cycle and beam amplification factor of beam expander, we evaluated the processing performance considering amount of dross, processing efficiency and processed linewidth in the sample. We could carry out the proper line marking at the condition of 70% lamp current, duty cycle of 7-10% and 6-times amplification of beam diameter. To perform efficient line processing, the utilization of duty cycle of 12% at 80% lamp current was also preferred.

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Si 기판을 이용한 GaN 박막의 구조적 특성 연구 (A Study of Structure Properties of GaN films on Si(111) by MOCVD)

  • 김덕규;김경민;김진사;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.59-60
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    • 2005
  • The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AIN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) CaN layer. X-ray diffraction measurementsare used to determine the effect of AIN thickness on the strain in the subsequent GaN layers. The 437arcsec linewidth on the (002) x-ray rocking curve also attest the high crystalline quality of GaN on Si (111).

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Charge Transfer between Graphene and a Strong Electron Acceptor, Tetrafluorotetracyanoquinodimethane (F4-TCNQ)

  • 이지은;김선호;강성규;양성익;류순민
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.458-458
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    • 2011
  • Graphene, a single atomic layer of sp2-bonded carbon, shows substantial potential for various applications. Chemical manipulation of its electronic properties will be of great importance. In this study, we have investigated interaction between graphene and organic molecular layer of tetrafluorotetracyanoquinodimethane (F4-TCNQ), a strong electron acceptor. F4-TCNQ films of varying thickness were evaporated onto graphene mechanically exfoliated on SiO2/Si substrates. F4-TCNQ molecules increase the frequencies of Raman G and 2D bands of graphene while decreasing the linewidth of G band and 2D/G intensity ratio, which is consistent with increase of hole density in graphene. These results exemplify the possibility of chemical tuning of electronic properties of graphene.

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1.55$\mu\textrm{m}$ RWG-DFB-LD 제작 및 광학 특성 평가 (Fabrication of 1.55.$\mu\textrm{m}$ RWG-DFB-LDs and evaluation of its optical characteristics)

  • 이중기;이승원;조호성;장동훈;박경현;김정수;황인덕;김홍만;박형무
    • 전자공학회논문지A
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    • 제32A권2호
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    • pp.73-80
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    • 1995
  • We fabricated the 1.55.mu.m RWG-DFB-LD and measured its electrical and optical characteristics. Interference fringe of optical beams was used for grating formation and epi layers were grown by lower-temperature LPE. The fabricated RWG-DFB-LD operated in a single longitudinal mode with more than 30dB SMSR at 1543nm emitting wavelength and its threshold current was 40mA. The wavelength shift with operating temperature and characteristic temperature T$_{o}$ were 0.9${\AA}/^{\circ}C$ and 59K, respectively. Linewidth enhancement factor .alpha. and linewidty.optical power product were estimated as 6.15 and 60MHz$\cdot$mW respectively.

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^{87}Rb D_2$ 전이선에 대한 원편광 분광 연구 및 레이저 주파수 안정화 (Circular Polarization Spectroscopy in ^{87}Rb D_2$ line and Laser Frequency Stabilization)

  • 문한섭;김승일;김현아;김중복;이호성
    • 한국광학회지
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    • 제6권4호
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    • pp.317-323
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    • 1995
  • 선폭 축소된 반도체 레이저를 이용하여 루비듐 원자의 $D_{2}$ 전이선에 대해 도플러 효과가 제거된 편광분광을 실시하고 광펌핑 편광 분광 이론과 비교하였다. 펌프광이 충분히 약했을 때 실험에서 얻어진 분산모양의 스펙트럼은 단일 주기 광펌핑 이론과 잘 일치하였다. 또한 편광 분광 신호를 직접 오차신호로 사용하여 공진기 길이를 보상한 결과, 주파수 변조를 하지 않고서도 레이저 주파수를 원자의 초미세 전이선에 안정화시킬 수 있었다.

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임프린트 공정을 이용한 연성동박적층필름(FCCL)의 마이크로 패턴 제작 (Design and Fabrication of Micro Patterns on Flexible Copper Clad Laminate (FCCL) Using Imprinting Process)

  • 민철홍;김태선
    • 한국전기전자재료학회논문지
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    • 제28권12호
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    • pp.771-775
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    • 2015
  • In this paper, we designed and fabricated low cost imprinting process for micro patterning on FCCL (flexible copper clad laminate). Compared to conventional imprinting process, developed fabrication method processing imprint and UV photolithography step simultaneously and it does not require resin etch process and it can also reduce the fabrication cost and processing time. Based on proposed method, patterns with $10{\mu}m$ linewidth are fabricated on $180mm{\times}180mm$ FCCL. Compared to conventional methods using LDI (laser direct imaging) equipment that showed minimum line with $10{\sim}20{\mu}m$, proposed method shows comparable pattern resolution with very competitive price and shorter processing time. In terms of mass production, it can be applied to fabrication of large-area low cost applications including FPCB.

Saturated Absorption Spectroscopy of 13C2H2 in the Near Infrared Region

  • Moon, H. S.;Lee, W. K.;Suh, H. S.
    • Journal of the Optical Society of Korea
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    • 제8권1호
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    • pp.1-5
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    • 2004
  • Using the external cavity spectroscopy method, we have observed the saturated absorption spectrum of the P(16) line of the v$_1$+v$_3$ band of $^{13}C$_2$H$_2$$. The frequency of a laser has been stabilized to the saturated absorption spectrum. The relative contrast of the saturation spectrum is about 7% with respect to the linear absorption and the linewidth is about 1.8 MHz. The frequency fluctuation of the stabilized LD is about $\pm$ 20 KHz for a sampling time of 100 ms.

Ferromagnetic resonance of Hensler $Ni_2$MnGa thin films

  • M. D. Huang;Lee, N. N.;Lee, Y. P.;J. Y. Rhee;J. Dubowik
    • 한국진공학회지
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    • 제12권S1호
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    • pp.116-119
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    • 2003
  • $Ni_2$MnGa films, deposited on mica and glass substrates, were studied by ferromagnetic resonance (FMR) technology. The temperature-dependent resonance field was measured and a martensitic phase transformation (MT) was found between 310 and 340 K, exhibiting an abnormality on the curve. The easy axis is found to be in the film plane. The line width increases as a whole with decreasing temperature, which is discussed in terms of the motional narrowing mechanism. The resonance field was also measured as a function of orientation and the results were fitted, exhibiting a good consistence.