• Title/Summary/Keyword: Limited Memory

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Garbage Collection Technique for Balanced Wear-out and Durability Enhancement with Solid State Drive on Storage Systems

  • Kim, Sungho;Kwak, Jong Wook
    • Journal of the Korea Society of Computer and Information
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    • v.22 no.4
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    • pp.25-32
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    • 2017
  • Recently, the use of NAND flash memory is being increased as a secondary device to displace conventional magnetic disk. NAND flash memory, as one among non-volatile memories, has many advantages such as low power, high reliability, low access latency, and so on. However, NAND flash memory has disadvantages such as erase-before-write, unbalanced operation speed, and limited P/E cycles, unlike conventional magnetic disk. To solve these problems, NAND flash memory mainly adopted FTL (Flash Translation Layer). In particular, garbage collection technique in FTL tried to improve the system lifetime. However, previous garbage collection techniques have a sensitive property of the system lifetime according to write pattern. To solve this problem, we propose BSGC (Balanced Selection-based Garbage Collection) technique. BSGC efficiently selects a victim block using all intervals from the past information to the current information. In this work, SFL (Search First linked List), as the proposed block allocation policy, prolongs the system lifetime additionally. In our experiments, SFL and BSGC prolonged the system lifetime about 12.85% on average and reduced page migrations about 22.12% on average. Moreover, SFL and BSGC reduced the average response time of 16.88% on average.

Tracking Cold Blocks for Static Wear Leveling in FTL-based NAND Flash Memory (메모리에서 정적 마모도 평준화를 위한 콜드 블록 추적 기법)

  • Jang, Yonghun;Kim, Sungho;Hwang, Sang-Ho;Lee, Myungsub;Park, Chang-Hyeon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.12 no.3
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    • pp.185-192
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    • 2017
  • Due to the characteristics of low power, high durability and high density, NAND flash memory is being heavily used in various type of devices such as USB, SD card, smart phone and SSD. On the other hand, because of another characteristic of flash cell with the limited number of program/erase cycles, NAND flash memory has a short lifetime compared to other storage devices. To overcome the lifetime problem, many researches related to the wear leveling have been conducted. This paper presents a method called a TCB (Tracking Cold Blocks) using more reinforced constraint conditions when classifying cold blocks than previous works. TCB presented in this paper keeps a MCT (Migrated Cold block Table) to manage the enhanced classification process of cold blocks, with which unnecessary migrations of pages can be reduced much more. Through the experiments, we show that TCB reduces the overhead of wear leveling by about 30% and increases the lifetime up to about 60% compared to BET and BST.

Operating Characteristics of Amorphous GeSe-based Resistive Random Access Memory at Metal-Insulator-Silicon Structure (금속-절연층-실리콘 구조에서의 비정질 GeSe 기반 Resistive Random Access Memory의 동작 특성)

  • Nam, Ki-Hyun;Kim, Jang-Han;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.7
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    • pp.400-403
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    • 2016
  • The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).

Self-adaptive testing to determine sample size for flash memory solutions

  • Byun, Chul-Hoon;Jeon, Chang-Kyun;Lee, Taek;In, Hoh Peter
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.8 no.6
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    • pp.2139-2151
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    • 2014
  • Embedded system testing, especially long-term reliability testing, of flash memory solutions such as embedded multi-media card, secure digital card and solid-state drive involves strategic decision making related to test sample size to achieve high test coverage. The test sample size is the number of flash memory devices used in a test. Earlier, there were physical limitations on the testing period and the number of test devices that could be used. Hence, decisions regarding the sample size depended on the experience of human testers owing to the absence of well-defined standards. Moreover, a lack of understanding of the importance of the sample size resulted in field defects due to unexpected user scenarios. In worst cases, users finally detected these defects after several years. In this paper, we propose that a large number of potential field defects can be detected if an adequately large test sample size is used to target weak features during long-term reliability testing of flash memory solutions. In general, a larger test sample size yields better results. However, owing to the limited availability of physical resources, there is a limit on the test sample size that can be used. In this paper, we address this problem by proposing a self-adaptive reliability testing scheme to decide the sample size for effective long-term reliability testing.

Declines in the Components of Episodic Memory by Normal Aging Focusing on Object, Spatial Location, Temporal Order Memory (정상노화 과정에 따른 일화기억 하위요소의 변화양상에 관한 연구 : 사물, 공간위치, 시간순서 기억을 중심으로)

  • Heo, Seo-Yoon;Park, Jin-Hyuck
    • The Journal of Korean society of community based occupational therapy
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    • v.9 no.2
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    • pp.13-22
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    • 2019
  • Objective : The purpose of this technical research is to determine decline of episodic memory by normal aging focucing on object, spatial location, and temporal order memory. Methods : We allocated seventy-seven of healthy adults from twenty to eighty years old, and performed computer-based cognitive tasks which were consisted of the object, spatial location, and temporal order memory. We used OpenSesame(OpenSesame Inc, OR), put ten pictures people normally see in their daily life, and evaluated those aspects through asking the objects types, object spatial locations, and picture temporal orders from 10 sheets of the picture. Results : Object and spatial location memory were not affected by normal aging whereas, temporal order memory significantly decreased with normal aging. Specifically, temporal order memory for in their age of forty was significantly decreased compared with their age of twenty and object memory at their age of eighty was relatively high compared to spatial location and temporal order memory. We found out that temporal order memory worse fastest and object memory lasted longest. Conclusion : In this study, we confirmed characteristics of declines of episodic memory consisting of object, spatial location, and temporal order memory. Notably, we could specifically identify declines of spatial location and temporal order memory with normal aging previous studies investigated on a limited basis using conventional neuropsychological assessments. These findings would be helpful to screen impairment in episodic memory by normal aging and provide an evidence that cognitive intervention for healthy older adults needs to include spatial and temporal aspect of memory.

The role of positive affect in virtual collaboration: a transactive memory system perspective

  • Chae, Seong Wook
    • Journal of the Korea Society of Computer and Information
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    • v.21 no.5
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    • pp.99-109
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    • 2016
  • Creative performance has been regarded as the key to the success of an organization in recent years, and is considered essential for the survival of an organization. Organizations must find and develop creative solutions to deal with a variety of business issues. How can organizations become more creative? To develop creativity, organizations must make it easier to connect the knowledge and perspectives of its various members, who may be scattered around the world, by developing a virtual team. Drawing from the transactive memory systems (TMS), which include expertise location, credibility, and coordination, this study investigates how the positive affect of team members influences the development of creative performance during virtual collaboration where face-to-face team activities are limited. The proposed structured model was empirically tested with cross-sectional data from 322 individuals. Results indicated that the positive affect of team members was found to moderate the relationship between TMS and creativity. Through this study, we expect to provide an understanding of the mechanisms involved in developing creativity among team members in a virtual work environment.

Concurrency Control Method to Provide Transactional Processing for Cloud Data Management System

  • Choi, Dojin;Song, Seokil
    • International Journal of Contents
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    • v.12 no.1
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    • pp.60-64
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    • 2016
  • As new applications of cloud data management system (CDMS) such as online games, cooperation edit, social network, and so on, are increasing, transaction processing capabilities for CDMS are required. Several transaction processing methods for cloud data management system (CDMS) have been proposed. However, existing transaction processing methods have some problems. Some of them provide limited transaction processing capabilities. Some of them are hard to be integrated with existing CDMSs. In this paper, we proposed a new concurrency control method to support transaction processing capability for CDMS to solve these problems. The proposed method was designed and implemented based on Spark, an in-memory distributed processing framework. It uses RDD (Resilient Distributed Dataset) model to provide fault tolerant to data in the main memory. In our proposed method, database stored in CDMS is loaded to main memory managed by Spark. The loaded data set is then transformed to RDD. In addition, we proposed a multi-version concurrency control method through immutable characteristics of RDD. Finally, we performed experiments to show the feasibility of the proposed method.

The Significance of Dongeuibogam Registration and Its Modern Application ("동의보감(東醫寶鑑)" 등재(登載)의 의의(意義)와 현대적(現代的) 활용(活用))

  • Kim, Nam-Il
    • Korean Journal of Oriental Medicine
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    • v.15 no.1
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    • pp.13-22
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    • 2009
  • The registration of Dongeuibogam as UNESCO's Memory of world was not only a national triumph but also an internationally important event. This event got rid of the opinions that suggested Dongeuibogam was a medical system practiced only un the limited area of Korea and this event signified the restoration of Dongeuibogam's international and universal position. Therefore, ih is now our job to find Dongeuibogam's modern applications and restore its value. This study was carried out with the purpose of examining the significance of Dongeuibogam's registration as Memory of world from a medical history's point of view and finding its modern applications. The author discussed significance in three parts of Past Significance, Present Significance and Future Significance. As for modern applications, the author reviewed currently used applications and considered the possible ways to restore its original value as an alternative for future medical science.

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Spatial Distribution of Localized Charge Carriers in SONOS Memory Cells

  • Kim Byung-Cheul
    • Journal of information and communication convergence engineering
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    • v.4 no.2
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    • pp.84-87
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    • 2006
  • Lateral distributions of locally injected electrons and holes in an oxide-nitride-oxide (ONO) dielectric stack of two different silicon-oxide-nitride-oxide-silicon (SONOS) memory cells are evaluated by single-junction charge pumping technique. Spatial distribution of electrons injected by channel hot electron (CHE) for programming is limited to length of the ONO region in a locally ONO stacked cell, while is spread widely along with channel in a fully ONO stacked cell. Hot-holes generated by band-to-band tunneling for erasing are trapped into the oxide as well as the ONO stack in the locally ONO stacked cell.

On-line Associative Memory Design For Temporal Pattern Storage and Classification (시변패턴의 저장과 인식을 위한 On-line 연상 메모리의 설계)

  • Yeo, Seong-Won;Lee, Chong-Ho
    • Proceedings of the KIEE Conference
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    • 1996.07b
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    • pp.1395-1397
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    • 1996
  • Many of the existing neural associative memories are trained and recalled in separate modes and are not suitable for temporal pattern storage and classification in that user must specify the time and length of input patterns. In this paper, a new on-line temporal associative memory model is presented. This memory is structured in layers of neurons and each neuron has limited number of weights so that calculation complexity can be considerably reduced and processing of patterns can be achieved in real time.

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