• Journal of the Korean Society for Precision Engineering
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• v.20 no.12
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• pp.183-190
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• 2003

In this paper, investigated are the machining characteristics such as material removal rate and machining time with respect to discharge area and capacitance in micro electrical discharge machining (MEDM). As discharge area determined by the electrode size and capacitance change, the optimal feedrate to allow the minimum machining time changes. The smaller discharge area is, the lower MRR becomes because of the area effect. As the capacitance increases, MRR also increases. However there is the limit capacitance beyond which the MRR does not increase anymore. As the discharge area increases, the limit capacitance also increases.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1656-1663
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• 2016

A capacitive wireless power transfer (C-WPT) system uses an electric field to transmit power through a physical isolation barrier which forms a pair of ac link capacitors between the metal plates. However, the physical dimension and low dielectric constant of the interface medium severely limit the effective link capacitance to a level comparable to the main switch output capacitance of the transmitting circuit, which thus narrows the soft-switching range in the light load condition. Moreover, by fundamental limit analysis, it can be proved that such a low link capacitance increases operating frequency and capacitor voltage stress in the full load condition. In order to handle these problems, this paper investigates optimal design of double matching transformer networks for C-WPT. Using mathematical analysis with fundamental harmonic approximation, a design guideline is presented to avoid unnecessarily high frequency operation, to suppress the voltage stress on the link capacitors, and to achieve wide ZVS range even with low link capacitance. Simulation and hardware implementation are performed on a 5-W prototype system equipped with a 256-pF link capacitance and a 200-pF switch output capacitance. Results show that the proposed scheme ensures zero-voltage-switching from full load to 10% load, and the switching frequency and the link capacitor voltage stress are kept below 250 kHz and 452 V, respectively, in the full load condition.

• Transactions of the Korean Society of Automotive Engineers
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• v.2 no.5
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• pp.1-10
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• 1994

By applying of total electric capacitance method on engine connecting rod bearing during engine operating, the influence of engine operating conditions and lubricants on bearing oil film thickness was investigated. Minimum oil film thickness increases with kinematic viscosity, but as increasing of viscosity, the increasing ratio of film thickness is reduced. Also minimum oil film thickness increases with engine speed but there is a limit. Above this limit, film thickness decreases in opposition because of crankshaft inertia. As increasing of engine torque and oil temperature, munimum oil film thickness decreases linearly. For non-Newtonian oils, the correlation between $100{\circ}C$ kinematic viscosity and munimum oil film thickness is very poor.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.42 no.4
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• pp.1-6
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• 2005

Recently embedded passive technology which fabricate passive elements such as resistors and capacitors at the inner layer of PCB(Printed Circuit Board) is used to make high performance IT products. However, embedded capacitor has limit in full range circuit applications because of the low capacitance density. In this paper, a new embedded capacitor which has wrinkled electrodes and dielectric layer was proposed to overcome the limits. FEM(Finite Elements Method) technique was used to evaluate capacitance density of the wrinkled type embedded capacitor. Capacitance density of the wrinkled type embedded capacitor is larger than that of conventional planar type embedded capacitor by about 25.6%$\sim$39.6%. In case of thin film type embedded capacitor, proposed wrinkled structure has more enhanced effect on the capacitance density.

• International Journal of Aeronautical and Space Sciences
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• v.16 no.2
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• pp.223-246
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• 2015

Structural vibration control using a piezoelectric shunt is an established control technique. This technique involves connecting a piezoelectric patch, which is bonded onto or embedded into the vibrating structure, to an electric shunt circuit. Thus, vibration energy is converted into electrical energy and is dissipated through a network of electrical components. Different configurations of shunt have been researched, among which the negative capacitance-inductance shunt has gained prominence recently. It is basically an analog, active circuit consisting of operational amplifiers and passive elements to introduce real and imaginary impedance on the vibrating structure. The present study attempts to model the behavior of a negative capacitance-inductance shunt in terms of power output and efficiency using circuit modeling software. The shunt model is validated experimentally and is used to control the structural vibration of an aluminum beam, connected to a pair of piezoelectric patches, under broadband excitation. The model is also used to determine the optimal parameters of a negative capacitance-inductance shunt to increase the efficiency and predict the voltage output limit of op-amp against the supply voltage.

• Journal of the Korean Society of Safety
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• v.8 no.4
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• pp.95-100
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• 1993

In power transistor switching circuit have shunt snubber(dv/dt limiting capacitor) and series snubber (di/dt limiting inductor). The shunt snubber is used to reduce the turn-off switching loss and the series snubber is used to reduce the turn-on switching loss. Design procedures are derived for selecting the capacitance, inductor and resistance to limit the peak voltage and current values. The action of snubber is analyzed and applied to the design for safety PWM inverter.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.250-253
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• 2007

Gas Discharge Tubes (GDTs) are widely used as surge protectors for commnuication applications due to their small internal capacitance. In these days, however, they are mostly used in combined configurations, because the activation voltage required to initiate the discharge process in the GDTs for sufficient amount of time can be large enough to damage surge-sensitive protected circuits. For GDTs with a considerably high initial over-voltage value, we should limit the peak voltage using a TVS or filter. As for ZnO varistors, even though their performance for voltage restriction is excellent, their applications in high-frequency commnuication circuits have been limited because of higher internal capacitance when compared to the GDTs. In order to develop a surge protector for commnuication applications by taking advantages of these two devices, we built a combination circuit that connects a GDT and a ZnO varistor along with a choke coil in common and differential modes. We describe how the applied SPDs operate in protection process steps with the actual data obtained from the residual voltage measurements at each step. The experiment results show that the surge voltage restriction with the choke coil is more effective in 100 [kHz] RingWave voltage than in lightning impulse voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.1
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• pp.15-21
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• 2013

In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1200-1208
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• 2016

Planar electromagnetic interference (EMI) filter has significant engineering significance to power electronic system integration and miniaturization. However, the value of differential mode capacitance cannot meet the demand of noise suppression because of the size limit of ceramics. In this case, the EMI filter of novel multilayers is recommended to address this issue. A novel integrated structure of EMI filter based on multilayer ceramic is proposed in this study. The inductance and capacitance of the new structure can be designed separately, which is an advantage in manufacturing. Insertion loss is measured more closely to the actual situation in this study, which is different from the condition where source and load impedances are both 50 Ω. In the process of designing a novel EMI filter, noise impedance is considered. Moreover, the prototype is created and applied to a small switching power supply, which verifies the effectiveness of the developed EMI filter.

• ETRI Journal
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• v.39 no.5
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• pp.737-745
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• 2017

A 6-GHz-to-18-GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a $0.25-{\mu}m$ AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power-added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse-mode condition of a $100-{\mu}s$ pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.