• Korean Journal of Materials Research
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• 제32권6호
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• pp.307-312
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• 2022

Metal halide perovskite (MHP) nanocrystals (NCs) have emerged as promising materials for various optoelectronic applications including photovoltaics, light-emitting devices, and photodetectors because of their high absorption coefficient, high diffusion length, and photoluminescence quantum yield. However, understanding the morphological evolution of the MHP NCs as well as their controlled assembly into optoelectronic devices is still challenging and will require further investigation of the colloidal chemistry. In this study, we found that the amount of n-octylamine (the capping agent) plays a crucial role in inducing further growth of the MHP NCs into one-dimensional nanowires during the aging process. In addition, we demonstrate that the dielectrophoresis process can permit self-alignment of the MHP nanowires with uniform distribution and orientation on interdigitated electrodes. A strong light-matter interaction in the MHP NWs array was observed under UV illumination, indicating the photo-induced activation of their luminescence and electrical current in the self-aligned MHP nanowire arrays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제25권10호
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• pp.844-848
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• 2012

Encapsulant curing in terms of convection oven leads to thermal induced stress due to nonuniform thermal conductivity in LED package. We have adopted infrared (IR) light for silicone curing in order to release the stress. The light uniformity irradiated on an encapsulant surface is confirmed to be uniform by optical simulation. Shear strength of die paste using IR compared to convection oven is increased 19.2% at the same curing time, which indicates curing time can be shortened. The indentation depth difference between center and edge of silicone encapsulant in terms of convection oven and IR are 14.8% and 3.4%, respectively. Curing by IR also shows 2.3% better radiant flux persistency rate of LED at $85^{\circ}C$ after 1,000 h reliability test compared to convection curing.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.588-593
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• 2014

Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified metal contact geometry having uniform distance between the two contacts is proposed and verified by a numerical simulation. It is confirmed that the proposed structure shows better current spreading, resulting in higher internal quantum efficiency and reduced reverse leakage current.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• 제20권5호
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• pp.623-631
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• 2011

Light emitting diodes (LEDs) which can produce uniform luminescence need a very difficult and complex procedure because LEDs have strong and straight optical property. One of the major parameters for LED production is the determination of the viewing angle. However, in the present, there is still no available production technology to measure LED viewing angle and optical property. In this study, we developed a five-side LED viewing angle and optical property measurement system, having a source meter that uses a high speed switching photo relay instead of a mercury relay. This new measurement system can measure the viewing angle at a very high accuracy of ${\pm}0.66^{\circ}$. This new technology presents a great potential for fast and reliable LED mass production, which can significantly cut down the cost from savings in production time.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.99-99
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• 2010

Recently, amorphous transparent oxide semiconductors (TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). The TOS TFTs using a-IGZO channel layers exhibit a high electron mobility, a smooth surface, a uniform deposition at a large area, a high optical transparency, a low-temperature fabrication. In spite of many advantages of the sputtering process such as better step coverage, good uniformity over large area, small shadow effect and good adhesion, there are not enough researches about characteristics of a-IGZO thin films. In this study, therefore, we focused on the electrical properties of a-IGZO thin films as a channel layer of TFTs. TFTs with the a-IGZO channel layers and Y2O3 gate insulators were fabricated. Source and drain layers were deposited using ITO target. TFTs were deposited on unheated non-alkali glass substrates ($5cm{\times}5cm$) with a sintered ceramic IGZO disc (3 inch $\varnothing$, 5mm t), Y2O3 disc (3 inch $\varnothing$, 5mm t) and ITO disc (3 inch $\varnothing$, 5mm t) as a target by magnetron sputtering method. The O2 gas was used as the reactive gas. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of a-IGZO thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Korean Journal of Materials Research
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• 제19권8호
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• pp.443-446
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• 2009

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.62-65
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• 2007

Conventional semiconductor processes have been utilized to fabricate 3.5-inch OTFT-driven OLEDs with a resolution of $176\;{\times}\;144$ pixels on plastic substrates. By using a PC-OVD method to deposit a pentacene layer and optimizing patterning and the following processes, we could complete a uniform and reliable integration procedure for an active matrix organic light emitting devices on a plastic substrate. The technical importance of ours is the applicability of conventional semiconductor process to organic materials on plastic substrates. Although there are many hurdles to overcome, our approach and technical improvements are proved to be applicable to plastic electronics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제22권5호
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• pp.425-430
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• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• Journal of Bio-Environment Control
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• 제18권4호
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• pp.370-376
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• 2009

To produce uniform seedlings of tomato and cucumber with inexpensive way, their seedling quality by different light sources was investigated. The raising of seedling was performed by red LED (light emitting diodes), blue LED, red-blue mixed LED or fluorescent light with a fixed PPF(photosynthetic proton flux) level, about $40{\sim}60{\mu}mol{\cdot}m^{-2}{\cdot}sec^{-1}$. In the both tomato and cucumber, the rapid extension of hypocotyledonary axis was observed in Blue LED than fluorescent light, but opposite result was found in Red and mixed LED. During the nursery period of tomato and cucumber, the fresh weight was the highest in Red LED as 74% increasement in tomato and 74% in cucumber. In the case of seedling quality after the tomato nursery, there was no difference in the positions of 1st flower cluster and the number of bearing-flower per flower cluster by each light source. In case of cucumber, until 20th node, the setting ratio of female flower was higher in LED than fluorescent treatment, and also more healthy fruit setting was found in LED. Therefore, we assume that the Red or mixed (Red 2 + Blue 1) LED is more favorable to produce high quality tomato and cucumber seedlings in closed nursery facility.

• Journal of Bio-Environment Control
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• 제31권1호
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• pp.14-21
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• 2022

Uniform scions and rootstocks should be produced to ensure grafting success. Light quality is an important environmental factor that regulates seedling growth. The effects of warm- and cool-white light emitting diode (LED) ratios on seedling growth were investigated. Scions and rootstocks of cucumber, tomato, and watermelon were grown in a closed transplant production system using LED as the sole lighting source. The LED treatments were W1C0 (only warm-white), W1C1 (warm-white: cool-white = 1:1), W3C1 (warm-white: cool-white = 3:1), and W5C2 (warm-white: cool-white = 5:2). The seedlings grown in W1C1 had the shortest hypocotyls, and the seedlings grown in W1C0 had the longest hypocotyls among the three tested vegetables. The hypocotyls of watermelon scions, watermelon rootstocks, and tomato rootstocks were shortest in W1C1, followed by those in W3C1, W5C2, and W1C0, but there was no significant difference between W3C1 and W5C2, which remained the same as the ratio of cool-white LEDs increased. In addition, tomato scions had the first and second longest hypocotyls in W1C0 and W3C1, respectively, and the shortest hypocotyls in W5C2 and W1C1, along with W5C2 and W1C1, although the difference was not significant. The stem diameter was highest in W1C0 except for tomato seedlings and rootstocks of watermelon. The shoot fresh weight of scions and rootstocks of cucumber and watermelon and the root fresh weight of cucumber scions were lowest in W1C1. These results indicated that different ratios of LED lighting sources had a strong effect on the hypocotyl elongation of seedlings.