• Title/Summary/Keyword: Light-emitting diodes(LEDs)

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Backlight for Large-area LCD-TVs using Light Emitting Diodes

  • Choi, Jong-Hyun;Chu, Haang-Rhym;Bang, Ju-Young;Park, Hee-Jeong;Hong, Hee-Jung;Lim, Moo-Jong;Oh, Eui-Yeol;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1153-1156
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    • 2005
  • A backlight for large-area LCD (Liquid Crystal Display)-TVs has been developed using Light Emitting Diodes (LEDs). Performances of the backlight and the methods driving the LEDs are introduced in this research. A spectral relationship between the LEDs and the color filters of a panel were investigated as well. In order to realize a CRT like dynamic effect, the area-focused luminance control (AFLC) technology was adopted in developing the backlight. Thus, a possibility of applying the LEDs to the backlight for large-area LCD-TVs was systematically proved.

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Differences in Design Considerations between InGaN and Conventional High-Brightness Light-Emitting Diodes

  • Lee, Song-Jae
    • Journal of the Optical Society of Korea
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    • v.2 no.1
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    • pp.13-21
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    • 1998
  • Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

Effect of Light-emitting Diodes (LEDs) and Ventilation on the in vitro Shoot Growth of Eucalyptus pellita (Eucalyptus pellita의 기내(器內) 줄기생장에 미치는 LEDs (Light-emitting diodes) 및 환기처리(換氣處理) 효과)

  • Kim, Ji-Ah;Moon, Heung Kyu
    • Journal of Korean Society of Forest Science
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    • v.95 no.6
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    • pp.716-722
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    • 2006
  • Various light sources including LEDs (Light emitting diodes) affecting on shoot growth was examined using in vitro shoots of E. pellita. Generally, it appeared that ventilation treatment was the most important factor affecting on normal shoot growth, irrespective of irradiation sources. Ventilation resulted in better performance of the cultures under 100% blue LED radiation. These include better shoot growth, more number of leaves, more number of internodes, more number of axillary buds, and heavier dry matters. The highest total chlorophyll content was obtained under both cool-white fluorescent lamps and R5B5 (50% red LED + 50% blue LED). The value was $24.5{\mu}g/g$ and $20.1{\mu}g/g$, respectively. In addition, ventilation resulted in higher carotenoid content in all irradiation sources except 100% red LED radiation. In conclusion, shoot growth of E. pellita could be reached maximum by ventilation under R5B5 (50% red LED + 50% blue LED).

Improvement of Light Extraction Efficiency by Side Surface Texturing in Nitride-based Light-Emitting Diodes (질화계 발광다이오드의 측면 형상화를 이용한 광 추출 효율 향상)

  • Jang, Dong-Hyeon;Sim, Jong-In
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.95-96
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    • 2008
  • We theoretically investigated the influence of side surface texturing on the light extraction efficiency in nitride-based light-emitting diodes (LEDs). The light extraction efficiency was expected as 1.2 times larger in a LED with textured surfaces compared to without ones.

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380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Bae, Sung-Bum;Kim, Sung-Bok;Kim, Dong-Churl;Nam, Eun Soo;Lim, Sung-Mook;Son, Jeong-Hwan;Jo, Yi-Sang
    • ETRI Journal
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    • v.35 no.4
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    • pp.566-570
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    • 2013
  • In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.

Enhanced Internal Quantum Efficiency and Light Extraction Efficiency of Light-emitting Diodes with Air-gap Photonic Crystal Structure Formed by Tungsten Nano-mask

  • Cho, Chu-Young;Hong, Sang-Hyun;Kim, Ki Seok;Jung, Gun-Young;Park, Seong-Ju
    • Bulletin of the Korean Chemical Society
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    • v.35 no.3
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    • pp.705-708
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    • 2014
  • We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

Numerical Study of Polarization-Dependent Emission Properties of Localized-Surface-Plasmon-Coupled Light Emitting Diodes with Ag/SiO2 Na

  • Moon, Seul-Ki;Yang, Jin-Kyu
    • Journal of the Optical Society of Korea
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    • v.18 no.5
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    • pp.582-588
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    • 2014
  • We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

Phototactic behavior 9: phototactic behavioral response of Tribolium castaneum (Herbst) to light-emitting diodes of seven different wavelengths

  • Song, Jaeun;Jeong, Eun-Young;Lee, Hoi-Seon
    • Journal of Applied Biological Chemistry
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    • v.59 no.2
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    • pp.99-102
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    • 2016
  • The phototactic behavioral responses of Tribolium castaneum adults to light-emitting diodes (LEDs) of seven different wavelengths were determined under various conditions (light exposure times, light sources, and luminance intensities) and compared with those of a black light bulb (BLB) under laboratory conditions. Based on the attractive rate (%) of T. castaneum adults under optimal conditions (50 lx and an 48 h exposure time) in the dark, red LED ($625{\pm}10nm$) exhibited the highest potential attractive rate (97.8 %), followed by yellow ($590{\pm}5nm$, 68.9 %), green ($520{\pm}5nm$, 55.6 %), infrared (IR) (730 nm, 54.4 %), white (450-620 nm, 41.1 %), blue ($470{\pm}10nm$, 34.4 %), and ultraviolet (UV) (365 nm, 0.06 %) LEDs. In comparison, red LED (97.8 %) was approximately 3.4 times more attractive to T. castaneum adults than the BLB (28.9 %). These results indicate that a red LED trap could be useful to control T. castaneum adults.

Dependency of Light Extraction Efficiency on Sapphire Substrate Pattern Shapes in Light Emitting Diodes (질화물계 발광다이오드에서 광 추출 효율의 패턴 기판 의존성)

  • Jang, Dong-Hyeon;Sim, Jong-In
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.355-356
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    • 2008
  • The light extraction efficiencies of GaN-based light-emitting diodes (LEDs) grown on differently patterned sapphire substrates were investigated by using the ray tracing method. It was found that angle of the pattern surface against the sapphire surface, the number of pattern per unit area were important structural factors for high extraction efficiency.

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