• Journal of the Optical Society of Korea
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• 제15권3호
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• pp.272-277
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• 2011

The effect of the M-window color mixing bar on the characteristics of color mixing and hot spots in the edge-lit backlight employing red (R), green (G), blue (G) light emitting diodes (LED) were studied in terms of the structure of the M-window color mixing bar. The rays from RGB LEDs entering the M-window bar were mixed by internal reflection and scattering inside the M-window bar so that the hot spots and color separation were minimized. The M-window bar was designed and fabricated and the simulation results are matched quite well to experimental data.

• 반도체디스플레이기술학회지
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• 제10권1호
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• pp.17-22
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• 2011

LEDs(Light Emitting Diodes) are becoming widely used and increasingly in demand. Quality inspection of the LEDs has become more important. Two-dimensional inspection systems are limited in inspection capability, so threedimensional(3-D) inspection systems are needed. In this paper, a cost-effective and simple 3-D measurement system of LED packages using phase measuring profilometry(PMP) is proposed. The proposed system uses a pico projector to project sinusoidal fringe patterns and to shift phases instead of piezocrystal. It was evaluated using extremely accurate gauge blocks, yielding excellent repeatability of about 12 um(3-sigma). 3-D measurements of various LED packages were performed to demonstrate the applicability and efficiency of the proposed system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Current Optics and Photonics
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• 제4권3호
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• pp.161-173
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• 2020

Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 10⁵ cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.29-35
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• 2016

This paper deals with a design method and capacity loss of an efficient multi-level modulation scheme for dimmable visible light communications (VLC) systems that use light-emitting diodes (LEDs) with efficiency droop. To this end, the impact of such an impairment on dimmable VLC is addressed with respect to multi-level modulations based on pulse-amplitude modulation (PAM) via data-rate optimization formulation.

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.36-41
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• 2016

Visible Light Communication (VLC) using Light Emitting Diodes (LEDs) within the existing lighting infrastructure can reduce the implementation cost and may gain higher throughput than radio frequency (RF) or Infrared (IR) based wireless systems. Current indoor VLC systems may suffer from poor downlink resource allocation problems and small system throughput. To address these two issues, we propose an algorithm called a conflict graph scheduling (CGS) algorithm, including a conflict graph and a scheme that is based on the conflict graph. The conflict graph can ensure that users are able to transmit data without interference. The scheme considers the user fairness and system throughput, so that they both can get optimum values. Simulation results show that the proposed algorithm can guarantee significant improvement of system throughput under the premise of fairness.

• 한국재료학회지
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• 제23권3호
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• pp.194-198
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• 2013

In this paper, we studied a p-type reflector based on indium tin oxide (ITO) for vertical-type ultraviolet light-emitting diodes (UV LEDs). We investigated the reflectance properties with different deposition methods. An ITO layer with a thickness of 50 nm was deposited by two different methods, sputtering and e-beam evaporation. From the measurement of the optical reflection, we obtained 70% reflectance at a wavelength of 382 nm by means of sputtering, while only 30% reflectance resulted when using the e-beam evaporation method. Also, the light output power of a $1mm{\times}1mm$ vertical chip created with the sputtering method recorded a twofold increase over a chip created with e-beam evaporation method. From the measurement of the root mean square (RMS), we obtained a RMS value 1.3 nm for the ITO layer using the sputtering method, while this value was 5.6 nm for the ITO layer when using the e-beam evaporation method. These decreases in the reflectance and light output power when using the e-beam evaporation method are thought to stem from the rough surface morphology of the ITO layer, which leads to diffused reflection and the absorption of light. However, the turn-on voltage and operation voltage of the two samples showed identical results of 2.42 V and 3.5 V, respectively. Given these results, we conclude that the two ITO layers created by different deposition methods showed no differences in the electric properties of the ohmic contact and series resistance.

• 생명과학회지
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• 제29권3호
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• pp.311-317
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• 2019

빛의 파장이 넙치의 성장에 미치는 영향을 분석하기 위하여 보라색(400 nm), 청색(465 nm), 녹색(508 nm), 그리고 적색(635 nm)의 LED와 백색 형광등하에서 성장 실험을 수행하였다. 수조당 15마리 넙치를 12:12 시간 각 파장 LED의 광주기하에서 60일 동안 사육한 결과, 각기 $269.92{\pm}13.02%$와 $2.18{\pm}0.06$(보라색), $363.21{\pm}3.74%$와 $2.56{\pm}0.07$(청색), $433.22{\pm}4.83%$와 $2.79{\pm}0.01$(녹색), $290.17{\pm}11.83$와 $2.27{\pm}0.05$(적색), 그리고 $340.74{\pm}26.58%$와 $2.47{\pm}0.10$(형광등)의 체중 증가와 일간성장률(SGR: %/day)이 관찰되었다. 본 실험 결과 녹색 LED 하에서 넙치의 성장이 가장 빨랐으며, 적색 조명 하에서는 성장이 느린 것으로 나타났다. 대부분의 혈액 지표는 그룹별 차이가 없으나, 적색 LED조명 하에서 자란 넙치에서 높은 수준의 glutamic oxaloacetic transaminase (GOT)가 관찰되었다. 빛의 1차 감지 기관인 망막의 조직학적 분석 결과 광수용체 층의 상대적 두께에 별다른 영향이 없는 것으로 보아 녹색광이 무해함을 유추할 수 있다.

• 대한화학회지
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• 제50권6호
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• pp.471-476
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• 2006

Ca1-xSrxS:Ce 형광체를 고상법으로 합성하였다. Ca1-xSrxS:Ce 형광체는 430nm와 470nm 영역에서 강한 흡수가 있다. CaS:Ce은 510 nm와 570 nm에서 발광한다. Ca1-xSrxS:Ce에서 Ca이 Sr으로 치환되면 발광 파장은 단파장 이동을 한다. 청색 발광 다이오드를 사용하여 백색 발광 다이오드를 얻는데 Ca1-xSrxS:Ce 형광체는 푸른빛을 띤 녹색과 황색을 방출할 수 있는 형광체로 사용될 수 있다. 백색 발광 다이오드의 적용을 위한 Ca1-xSrxS:Ce 형광체의 광 특성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.103-104
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• 1998

GaN is a ppromising materials fot applications in the blue/ultraviolet (UV) light emitting diodes (LEDs)[1] and laser diodes (LDs) [2] High quality ohmic contacts are very critical to these applications since the qualities of ohmic contact system pplay an impportant roles in the high efficient device opperations. For the n-GaN there have been many repports about ohmic contacts and the sppecific contact resistance were as low as from 10-8$\Omega$cm2 However for the ohmic contacts on pp-GaN much fewer study were repported and the sppecific contact resistivity was much lower than of n-GaN. In this ppapper we repport a new Ni/ppt/Au metallization scheme and discuss the mechanism of ohmic formation