• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.279.2-279.2
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• 2016

InGaN/GaN multiple quantum wells (MQWs) have been attracted much attention as light-emitting diodes (LEDs) in the visible and UV regions. Particularly, quantum efficiency of green LEDs is decreased dramatically as approaching to the green wavelength (~500 nm). This low efficiency has been explained by quantum confined Stark effect (QCSE) induced by piezoelectric field caused from a large lattice mismatch between InGaN and GaN. To improve the quantum efficiency of green LED, several ways including epitaxial lateral overgrowth that reduces differences of lattice constant between GaN and sapphire substrates, and non-polar method that uses non- or semi-polar substrates to reduce QCSE were proposed. In this study, graded short-period InGaN/GaN superlattice (GSL) was grown below the 5-period InGaN/GaN MQWs. InGaN/GaN MQWs were grown on the patterned sapphire substrates by vertical-metal-organic chemical-vapor deposition system. Five-period InGaN/GaN MQWs without GSL structure (C-LED) were also grown to compare with an InGaN/GaN GSL sample. The luminescence properties of green InGaN/GaN LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensities of the GSL sample measured at 10 and 300 K increase about 1.2 and 2 times, respectively, compared to those of the C-LED sample. Furthermore, the PL decay of the GSL sample measured at 10 and 300 K becomes faster and slower than that of the C-LED sample, respectively. By inserting the GSL structures, the difference of lattice constant between GaN and sapphire substrates is reduced, resulting that the overlap between electron and hole wave functions is increased due to the reduced piezoelectric field and the reduction in dislocation density. As a results, the GSL sample exhibits the increased PL intensity and faster PL decay compared with those for the C-LED sample. These PL and TRPL results indicate that the green emission of InGaN/GaN LEDs can be improved by inserting the GSL structures.

• Journal of the Korean Applied Science and Technology
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• v.32 no.2
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• pp.330-338
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• 2015

The influences of fluorescence, scattering, and flocculation in turbid material by light scattering of N-propyl-N,N-dimethylethanolamine, fluorescence agent and absorption agent were interpreted for the scattered fluorescence intensity and wavelength. They have been studied the molecular properties by the spectroscopy of laser induced fluorescence (LIF) and flocculation. The effects of optical properties in scattering media have been found by the optical parameters(${\mu}_s$, ${\mu}_a$, ${\mu}_t$). Flocculation is an important step in many solid-liquid separation processes and is widely used. When two particles approach each other, interactions of several colloid particles can come into play which may have major effect on the flocculation and LIF process. The values of scattering coefficient ${\mu}_s$ are large by means of the increasing scattering of scatterer, The values have been found that the slope decays exponentially as a function of concentration from laser source to detector by our experimental result. It may also aid in designing the best model for oil chemistry, bio-pharmaceutical, laser medicine and application of medical engineering on LIF and coagulation in particle transport mode.

• Journal of Sensor Science and Technology
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• v.11 no.4
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• pp.209-217
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• 2002

The developing of buried fiber optic sensor with high sensitivity and broad-area detecting intruders is carried out using fiber optic ROTDR(Rayleigh Optical Time Domain Reflectometry). The sensing part was designed to be able to broad-area detect intrusion effect per optical fiber length under ground. The bending light losses in optical fibers are investigated by commercial mini ROTDR with wavelength $1.55{\mu}m$, distance range 5km, pulse width 20ns, SNR=5.7. The sensing fibers are selected as the common telecommunication fibers are the 1.5mm, 3.5 mm outer diameter, 4km each length fiber products. Experiments were investigate the characteristics of signal sensitivity according to applied intrusion weight. The relation between the applied weight and the bending loss was almost linear, and broad-area detect intrusion effects are the 2m resolution and $1.3m^2$ per optical fiber length respectively. The light loss by the applied weight on fiber was 0.17 dB/kg. that the sensitivity of the optical fiber sensor was sufficient to detect intruders passing over the buried optical fiber.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• Journal of Life Science
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• v.31 no.10
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• pp.905-912
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• 2021

In this study, four common food-borne bacteria, namely, Escherichia coli, Salmonella typhimurium, Staphylococcus aureus, and Bacillus subtilis, were targeted via irradiation with 270 nm UV C-LED, 365 nm UV A-LED, 465~475 and 620~630 nm visible-LED, and 850 and 5,000~7,000 nm infrared-LED light. The effect on the growth of each bacterial species was investigated. In the case of 270 nm UV C-LED, all four strains showed inhibitory effects compared with the control group when irradiated for 10 or 30 min. Furthermore, when irradiated with 365 nm UV A-LED for 1 or 3 hr, B. subtilis showed 100% growth inhibition. When irradiated with 465~475 nm visible-LED for 1 hr, all four strains showed no significant difference from the control group but showed significant growth inhibition when irradiated for 3 hr. S. aureus and B. subtilis treated with 620~630 nm visible-LED; S. typhimurium and S. aureus treated with 850 nm infrared-LED; and E. coli, S. typhimurium, and S. aureus treated with 5,000~7,000 nm infrared-LED were confirmed to significantly proliferate compared with the control group. The results of this experiment show the potential of the use of various LED light sources as a food preservation and application technology by examining their effect on the inhibition and growth of food-borne bacteria and by grasping the characteristics of each wavelength.

• Korean Journal of Poultry Science
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• v.45 no.4
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• pp.245-252
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• 2018

This study investigated the effect of LED light wavelength (color) on reproductive hormones and egg production of brown laying hens raised on floor. Red, blue, green and white colors of LED light were four treatments with four pens per treatment. One hundred forty four Hy-line brown laying hens (47 wks old) were allocated in a floor pen for six weeks trial. Egg production, egg quality, yolk cholesterol and hormones ($17{\beta}$-estradiol, progesterone) concentrations in plasma and oviduct were analyzed. Egg production of red group was higher (P<0.01) than that of green group. Haugh unit of eggs from red group was higher (P<0.01) than that of blue and green groups. Egg weight of green group was heavier (P<0.05) than that of red group. Shell of blue group was stronger (P<0.05) than that of red and white groups. Shell color of white group was browner (P<0.01) than that of blue and green groups. Yolk cholesterol of red group was higher (P<0.01) than that of others. Plasma $17{\beta}$-estradiol of red group was higher (P<0.05) than that of others at $3^{rd}$ week, but that of white group was highest (P<0.05) at $6^{th}$ week. Oviduct progesterone of green group was higher (P<0.01) than that of others. The result showed that the LED colors affect the reproductive hormone concentrations, egg production, egg weight and egg quality. This study suggested that red LED would be the most appropriate color for floor raising brown laying hens to sustain the egg production when it begins to decline with aging.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.275-279
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• 2015

Poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) has attracted a great deal of attention as a transparent conductive material for organic solar cells or organic light-emitting diodes due to its high electrical conductivity, optical transparency, and excellent mechanical flexibility. It is well known that a solvent doping for PEDOT : PSS thin-films significantly increases the conductivity of films. In this paper, the effect of various kinds of solvent doping and post-treatment on the electrical and structural properties of PEDOT : PSS thin-films is investigated. The solvent doping greatly increases the conductivity of PEDOT : PSS thin-films up to 884 S/cm. A further enhancement of the conductivity of PEDOT : PSS thin-films is achieved by the solvent post-treatment which raises the conductivity up to 1131 S/cm. The enhancement is mainly caused by the depletion of insulating PSS and forming conducting PEDOT-rich granular networks. Strong optical absorption peaks at the wavelength of 225 nm of PEDOT : PSS thin-films indicate the depletion of insulating PSS by post-treatment. We believe that the solvent post-treatment is a promising method to achieve highly conductive transparent PEDOT : PSS thin-films for applications in efficient, low-cost and flexible organic devices.

• Korean Journal of Agricultural Science
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• v.40 no.4
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• pp.297-303
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• 2013

This study was carried out to examine the effect of Red LED (660 nm) and fluorescent lamp for night break (NB) treatments of each 3 hours (22:30-01:30), 4 hours (22:00-02:00) and 5 hours (21:30-:02:30) per day for 53 days on flower bud initiation and growth in Chrysanthemum cv. 'Baekma' and cv. 'Jinba'. The days to flower budding after short-day treatment in 'Baekma' was longer at fluorescent lamp 4 hr (21.0 days) and 5 hr (20.5 days) NB, and it was shorter at Red LED 3 hr (14.2 days). The days to flowering after short-day treatment in 'Baekma' was longer at fluorescent lamp 4 hr (54.0 days), 5 hr (53.5 days) NB, and Red LED 5 hr (53.3 days), and it was shortest at Red LED 3 hr (50.2 days) NB treatment among all treatments. The days to flower budding after short-day treatment of 'Jinba' was longer at fluorescent lamp 4 hr (20.6 days) and was shorter at Red LED 3 hr (14.1 days) among all treatments. Similarly, the days to flowering after short-day treatment of 'Jinba' was longer at fluorescent lamp 4 hr (55.3 days) and was shortest at Red LED 3 hr (50.2 days) among all treatments. Therefore, inhibition of flower bud initiation was the most effective under fluorescent lamp 4 hr treatment. The length of cut flower of 'Baekma' was increased by fluorescent lamp 4 hr, 5 hr, and Red LED 5 hr, but of 'Jinba' was longer at LED 4 hr and 5 hr treatment. The weight of cut flower of 'Baekma' was heaviest at fluorescent lamp 5 hr treatment and was at Red LED 5hr treatment for 'Jinba' even though there was not statistically significant difference between 'Baekma' and 'Jinba'. Consequently, under fluorescent lamp 4 hr for night break was the most effective on flower bud initiation, flowering inhibition and cut-flower characteristics in 'Baekma' and 'Jinba'.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.214-218
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• 2020

In this study, Mg_xZn_1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg_0.3Zn_0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg²⁺/Zn²⁺. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg_0.3Zn_0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.