• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.155-160
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• 2012

This paper reported a simple deposition-precipitation method, introducing the metal (Ni, Ag and Sn) and $Na_2S{\cdot}5H_2O$ to preparedispersion metal sulfide nanoparticles on the surface of the Multi-walled carbon nanotube for synthesis of CNT-$M_xS_y$ ($NiS_2$, $Ag_2S$, SnS) composite photocatalysts. The characterization of the prepared CNT-$M_xS_y$ ($NiS_2$, $Ag_2S$, SnS) composites was performed by X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis and BET analysis. Furthermore, the MB degradation rate constant for CNT-SnS composite was $5.68{\times}10^{-3}$ under visible light irradiation, which was much higher than the corresponding values for other samples. The detailed formation and photocatalytic mechanism are also provided here.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.9 s.252
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• pp.1078-1085
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• 2006

Many studies have been focused on how to manufacture ultra light metal structures and optimize them. In this study, we introduced a new idea to make sandwich panels with quasi-Kagome truss cores. First, metal sheets with a peculiar pattern of slits were expanded to be meshes, they are crimped into a triangular wave pattern, and then one third of struts were bent reversely to be quasi-Kagome trusses. Finally, two face sheets were bonded on the upper and the lower sides. The bending strength was estimated through elementary mechanics for the sandwich specimens with two kinds of face sheet the results of estimation were compared with the those of finite element analyses and experiments.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.980-985
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• 1987

The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

• Journal of Korea Foundry Society
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• v.42 no.4
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• pp.255-260
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• 2022

• Journal of Microbiology and Biotechnology
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• v.25 no.4
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• pp.503-510
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• 2015

The iLOV protein belongs to a family of blue-light photoreceptor proteins containing a light-oxygen-voltage sensing domain with a noncovalently bound flavin mononucleotide (FMN) as its chromophore. Owing to advantages such as its small size, oxygen-independent nature, and pH stability, iLOV is an ideal candidate over other reporter fluorescent proteins such as GFP and DsRed. Here, for the first time, we describe the feasibility of applying LOV domain-based fluorescent iLOV as a metal sensor by measuring the fluorescence quenching of a protein with respect to the concentration of metal ions. In the present study, we demonstrated the inherent copper sensing property of the iLOV protein and identified the possible amino acids responsible for metal binding. The fluorescence quenching upon exposure to Cu²⁺ was highly sensitive and exhibited reversibility upon the addition of the metal chelator EDTA. The copper binding constant was found to be 4.72 ± 0.84 µM. In addition, Cu²⁺-bound iLOV showed high fluorescence quenching at near physiological pH. Further computational analysis yielded a better insight into understanding the possible amino acids responsible for Cu²⁺ binding with the iLOV protein.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.414-423
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• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.211-214
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• 2008

GaN-based light-emitting diodes (LEDs) of a 405 nm wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52 % by adoption of the Ti-Al reflection layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.779-780
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• 2009

New inverted architecture of a hybrid inorganic-organic light-emitting diode, utilizing ZrO2 electron-injecting layer, is presented. The thickness of the ZrO2, as well as the annealing of the light-emitting polymer, is found critical to obtain good performance. A range of light-emitting polymers is shown to operate efficiently in the proposed architecture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.